FQB8N90CTM onsemi / Fairchild
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.59 EUR |
| 10+ | 3.38 EUR |
| 100+ | 2.89 EUR |
| 250+ | 2.75 EUR |
| 500+ | 2.59 EUR |
| 800+ | 2.24 EUR |
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Technische Details FQB8N90CTM onsemi / Fairchild
Description: MOSFET N-CH 900V 6.3A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V, Power Dissipation (Max): 171W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V.
Weitere Produktangebote FQB8N90CTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQB8N90CTM | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 900V 6.3A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB8N90CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQB8N90CTM | Hersteller : onsemi |
Description: MOSFET N-CH 900V 6.3A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB8N90CTM | Hersteller : onsemi |
Description: MOSFET N-CH 900V 6.3A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB8N90CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |