FJI5603DTU ONSEMI
Hersteller: ONSEMICategory: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Mounting: THT
Case: I2PAK
Kind of package: tube
Type of transistor: NPN
Current gain: 6...46
Frequency: 5MHz
Collector current: 3A
Collector-emitter voltage: 800V
Power dissipation: 100W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.17 EUR |
| 36+ | 1.99 EUR |
| 41+ | 1.74 EUR |
| 50+ | 1.44 EUR |
| 53+ | 1.36 EUR |
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Technische Details FJI5603DTU ONSEMI
Description: TRANS NPN 800V 3A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V, Frequency - Transition: 5MHz, Supplier Device Package: TO-262 (I2PAK), Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 800 V, Power - Max: 100 W.
Weitere Produktangebote FJI5603DTU nach Preis ab 1.27 EUR bis 2.94 EUR
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FJI5603DTU | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK Mounting: THT Case: I2PAK Kind of package: tube Type of transistor: NPN Current gain: 6...46 Frequency: 5MHz Collector current: 3A Collector-emitter voltage: 800V Power dissipation: 100W Polarisation: bipolar |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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FJI5603DTU | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Silicon |
auf Bestellung 1028 Stücke: Lieferzeit 10-14 Tag (e) |
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FJI5603DTU | Hersteller : onsemi |
Description: TRANS NPN 800V 3A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V Frequency - Transition: 5MHz Supplier Device Package: TO-262 (I2PAK) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 100 W |
auf Bestellung 336 Stücke: Lieferzeit 10-14 Tag (e) |
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FJI5603DTU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 800V 3A 100000mW 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |