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FGAF40N60UFDTU Fairchild Semiconductor
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Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
auf Bestellung 2512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
122+ | 4.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FGAF40N60UFDTU Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A, Supplier Device Package: TO-3PF, Td (on/off) @ 25°C: 15ns/65ns, Switching Energy: 470µJ (on), 130µJ (off), Test Condition: 300V, 20A, 10Ohm, 15V, Gate Charge: 77 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 100 W.
Weitere Produktangebote FGAF40N60UFDTU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FGAF40N60UFDTU | Hersteller : ON Semiconductor |
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auf Bestellung 10800 Stücke: Lieferzeit 21-28 Tag (e) |
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FGAF40N60UFDTU | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGAF40N60UFDTU | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 40W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 150nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGAF40N60UFDTU | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-3PF Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 470µJ (on), 130µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
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FGAF40N60UFDTU | Hersteller : onsemi / Fairchild |
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Produkt ist nicht verfügbar |
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FGAF40N60UFDTU | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 40W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 150nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |