Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (139739) > Seite 1642 nach 2329

Wählen Sie Seite:   [  << Vorherige Seite ]  1 232 464 696 928 1160 1392 1624 1637 1638 1639 1640 1641 1642 1643 1644 1645 1646 1647 1856 2088 2320 2329  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
FDS5351 FDS5351 ONSEMI FDS5351.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 58.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
60+1.2 EUR
109+ 0.66 EUR
122+ 0.59 EUR
143+ 0.5 EUR
151+ 0.48 EUR
500+ 0.47 EUR
Mindestbestellmenge: 60
FDS5670 FDS5670 ONSEMI FDS5670.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS5672 FDS5672 ONSEMI FDS5672.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS6375 FDS6375 ONSEMI FDS6375.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 36nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1810 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.46 EUR
82+ 0.88 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 50
FDS6574A FDS6574A ONSEMI FDS6574A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Polarisation: unipolar
Case: SO8
Kind of package: reel; tape
Gate charge: 105nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6575 FDS6575 ONSEMI fds6575-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6576 FDS6576 ONSEMI fds6576-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6612A FDS6612A ONSEMI fds6612a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS6673BZ FDS6673BZ ONSEMI FDS6673BZ.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6675BZ FDS6675BZ ONSEMI FDS6675BZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 21.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2239 Stücke:
Lieferzeit 7-14 Tag (e)
90+0.8 EUR
93+ 0.78 EUR
127+ 0.56 EUR
134+ 0.53 EUR
Mindestbestellmenge: 90
FDS6679AZ FDS6679AZ ONSEMI FDS6679AZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1327 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
82+ 0.88 EUR
108+ 0.66 EUR
114+ 0.63 EUR
500+ 0.6 EUR
Mindestbestellmenge: 64
FDS6680A FDS6680A ONSEMI FDS6680A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
85+ 0.84 EUR
116+ 0.62 EUR
122+ 0.59 EUR
500+ 0.58 EUR
Mindestbestellmenge: 67
FDS6681Z FDS6681Z ONSEMI FDS6681Z.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6682 FDS6682 ONSEMI ONSM-S-A0003584662-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6690A FDS6690A ONSEMI FDS6690A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1663 Stücke:
Lieferzeit 7-14 Tag (e)
85+0.84 EUR
100+ 0.72 EUR
139+ 0.51 EUR
148+ 0.49 EUR
Mindestbestellmenge: 85
FDS6699S FDS6699S ONSEMI FDS6699S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6875 FDS6875 ONSEMI FDS6875.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1781 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.33 EUR
66+ 1.09 EUR
85+ 0.84 EUR
90+ 0.8 EUR
Mindestbestellmenge: 54
FDS6898A FDS6898A ONSEMI FDS6898A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2443 Stücke:
Lieferzeit 7-14 Tag (e)
62+1.16 EUR
69+ 1.05 EUR
88+ 0.82 EUR
93+ 0.77 EUR
Mindestbestellmenge: 62
FDS6910 FDS6910 ONSEMI fds6910-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6911 FDS6911 ONSEMI FDS6911-D.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6912A FDS6912A ONSEMI FDS6912A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8
Case: SO8
Polarisation: unipolar
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 8.1nC
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 28mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6930A FDS6930A ONSEMI FAIRS26730-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 30V
Drain current: 5.5A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6930B FDS6930B ONSEMI FDS6930B.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 2W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 20V
Drain current: 5.5A
On-state resistance: 62mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 3.8nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2429 Stücke:
Lieferzeit 7-14 Tag (e)
118+0.61 EUR
123+ 0.58 EUR
164+ 0.44 EUR
174+ 0.41 EUR
Mindestbestellmenge: 118
FDS6990A FDS6990A ONSEMI FDS6990A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS8447 FDS8447 ONSEMI FDS8447.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 49nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 40V
Drain current: 12.8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1815 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.42 EUR
49+ 1.49 EUR
67+ 1.08 EUR
71+ 1.02 EUR
500+ 0.99 EUR
Mindestbestellmenge: 30
FDS8449 FDS8449 ONSEMI FDS8449.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1513 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
72+ 1 EUR
103+ 0.7 EUR
109+ 0.66 EUR
Mindestbestellmenge: 54
FDS86141 FDS86141 ONSEMI FDS86141.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; 2.5W; SO8
Drain-source voltage: 100V
Drain current: 7A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS86240 ONSEMI fds86240-d.pdf FDS86240 SMD N channel transistors
Produkt ist nicht verfügbar
FDS86242 FDS86242 ONSEMI fds86242-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4.1A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 126mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS8638 FDS8638 ONSEMI fds8638-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 6.3Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS8813NZ FDS8813NZ ONSEMI ONSM-S-A0003584271-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8858CZ FDS8858CZ ONSEMI fds8858cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 8.6/-7.3A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 8.6/-7.3A
On-state resistance: 28.8/24.3mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 46/24nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25/±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8870 FDS8870 ONSEMI FDS8870.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Mounting: SMD
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 112nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Drain current: 18A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8876 ONSEMI FAIRS24633-1.pdf?t.download=true&u=5oefqw FDS8876 SMD N channel transistors
Produkt ist nicht verfügbar
FDS8880 FDS8880 ONSEMI FDS8880.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)
95+0.76 EUR
107+ 0.67 EUR
143+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 95
FDS8884 FDS8884 ONSEMI FDS8884.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
143+ 0.5 EUR
200+ 0.36 EUR
218+ 0.33 EUR
Mindestbestellmenge: 120
FDS8896 ONSEMI fds8896-d.pdf FDS8896 SMD N channel transistors
Produkt ist nicht verfügbar
FDS89141 FDS89141 ONSEMI FDS89141.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; 31W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2086 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.86 EUR
22+ 3.4 EUR
29+ 2.53 EUR
30+ 2.39 EUR
500+ 2.33 EUR
1000+ 2.3 EUR
Mindestbestellmenge: 19
FDS89161 FDS89161 ONSEMI FDS89161.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2346 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
46+ 1.57 EUR
53+ 1.36 EUR
56+ 1.29 EUR
500+ 1.23 EUR
Mindestbestellmenge: 41
FDS89161LZ FDS89161LZ ONSEMI fds89161lz-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8935 FDS8935 ONSEMI fds8935-d.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.1A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 308mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8949 FDS8949 ONSEMI FDS8949.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 6A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 11nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 206 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.13 EUR
64+ 1.13 EUR
84+ 0.86 EUR
88+ 0.82 EUR
500+ 0.79 EUR
Mindestbestellmenge: 34
FDS8958A FDS8958A ONSEMI FDS8958A_F085.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1488 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
110+ 0.65 EUR
126+ 0.57 EUR
146+ 0.49 EUR
154+ 0.46 EUR
Mindestbestellmenge: 76
FDS8958B FDS8958B ONSEMI FAIRS46398-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.4/-4.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20/±25V
On-state resistance: 39/72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8978 FDS8978 ONSEMI ONSM-S-A0003584183-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; Idm: 49A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 49A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8984 FDS8984 ONSEMI FDS8984.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS9400A FDS9400A ONSEMI fds9400a-d.pdf FAIRS15620-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS9435A FDS9435A ONSEMI FDS9435A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
25+ 2.86 EUR
39+ 1.83 EUR
107+ 0.67 EUR
Mindestbestellmenge: 9
FDS9926A FDS9926A ONSEMI FDS9926A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1355 Stücke:
Lieferzeit 7-14 Tag (e)
110+0.65 EUR
123+ 0.58 EUR
158+ 0.45 EUR
167+ 0.43 EUR
2500+ 0.41 EUR
Mindestbestellmenge: 110
FDS9933A FDS9933A ONSEMI fds9933a-d.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; Idm: -20A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS9934C FDS9934C ONSEMI FDS9934C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 6.5/-5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12/±10V
On-state resistance: 50/90mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
fds9945 fds9945 ONSEMI FDS9945.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)
112+0.64 EUR
118+ 0.6 EUR
2500+ 0.42 EUR
Mindestbestellmenge: 112
FDS9958 FDS9958 ONSEMI FDS9958.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1277 Stücke:
Lieferzeit 7-14 Tag (e)
62+1.16 EUR
78+ 0.92 EUR
96+ 0.75 EUR
111+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 62
FDT1600N10ALZ FDT1600N10ALZ ONSEMI fdt1600n10alz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 10.42W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1765 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
114+ 0.63 EUR
129+ 0.56 EUR
145+ 0.49 EUR
154+ 0.47 EUR
Mindestbestellmenge: 49
FDT3612 FDT3612 ONSEMI fdt3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 3W; SOT223
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.7A
On-state resistance: 245mΩ
Type of transistor: N-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDT3N40TF FDT3N40TF ONSEMI fdt3n40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDT439N ONSEMI fdt439n-d.pdf FDT439N SMD N channel transistors
auf Bestellung 1154 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.67 EUR
112+ 0.64 EUR
117+ 0.61 EUR
Mindestbestellmenge: 43
FDT458P FDT458P ONSEMI FDT458P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223
Technology: PowerTrench®
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3.4A
On-state resistance: 210mΩ
Gate charge: 3.5nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
auf Bestellung 3964 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
132+ 0.54 EUR
179+ 0.4 EUR
193+ 0.37 EUR
Mindestbestellmenge: 120
FDT86102LZ FDT86102LZ ONSEMI FDT86102LZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.6A; 2.2W; SOT223
Technology: PowerTrench®
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.2W
On-state resistance: 46mΩ
Polarisation: unipolar
Gate charge: 25nC
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 6.6A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
FDT86106LZ FDT86106LZ ONSEMI fdt86106lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.2W
On-state resistance: 189mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
FDS5351 FDS5351.pdf
FDS5351
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 58.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
60+1.2 EUR
109+ 0.66 EUR
122+ 0.59 EUR
143+ 0.5 EUR
151+ 0.48 EUR
500+ 0.47 EUR
Mindestbestellmenge: 60
FDS5670 FDS5670.pdf
FDS5670
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS5672 FDS5672.pdf
FDS5672
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS6375 FDS6375.pdf
FDS6375
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 36nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1810 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.46 EUR
82+ 0.88 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 50
FDS6574A FDS6574A.pdf
FDS6574A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Polarisation: unipolar
Case: SO8
Kind of package: reel; tape
Gate charge: 105nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Drain-source voltage: 20V
Drain current: 16A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6575 fds6575-d.pdf
FDS6575
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6576 fds6576-d.pdf
FDS6576
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6612A fds6612a-d.pdf
FDS6612A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.4A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.4A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS6673BZ description FDS6673BZ.pdf
FDS6673BZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6675BZ FDS6675BZ.pdf
FDS6675BZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 21.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2239 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
90+0.8 EUR
93+ 0.78 EUR
127+ 0.56 EUR
134+ 0.53 EUR
Mindestbestellmenge: 90
FDS6679AZ FDS6679AZ.pdf
FDS6679AZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1327 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
82+ 0.88 EUR
108+ 0.66 EUR
114+ 0.63 EUR
500+ 0.6 EUR
Mindestbestellmenge: 64
FDS6680A FDS6680A.pdf
FDS6680A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
85+ 0.84 EUR
116+ 0.62 EUR
122+ 0.59 EUR
500+ 0.58 EUR
Mindestbestellmenge: 67
FDS6681Z FDS6681Z.pdf
FDS6681Z
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6682 ONSM-S-A0003584662-1.pdf?t.download=true&u=5oefqw
FDS6682
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6690A FDS6690A.pdf
FDS6690A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1663 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
85+0.84 EUR
100+ 0.72 EUR
139+ 0.51 EUR
148+ 0.49 EUR
Mindestbestellmenge: 85
FDS6699S FDS6699S.pdf
FDS6699S
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.1Ω
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6875 FDS6875.pdf
FDS6875
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -6A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1781 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.33 EUR
66+ 1.09 EUR
85+ 0.84 EUR
90+ 0.8 EUR
Mindestbestellmenge: 54
FDS6898A FDS6898A.pdf
FDS6898A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2443 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
62+1.16 EUR
69+ 1.05 EUR
88+ 0.82 EUR
93+ 0.77 EUR
Mindestbestellmenge: 62
FDS6910 fds6910-d.pdf
FDS6910
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6911 FDS6911-D.pdf
FDS6911
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6912A FDS6912A.pdf
FDS6912A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8
Case: SO8
Polarisation: unipolar
Mounting: SMD
Power dissipation: 1.6W
Gate charge: 8.1nC
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 28mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6930A FAIRS26730-1.pdf?t.download=true&u=5oefqw
FDS6930A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 30V
Drain current: 5.5A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS6930B FDS6930B.pdf
FDS6930B
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 2W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 20V
Drain current: 5.5A
On-state resistance: 62mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 3.8nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2429 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
118+0.61 EUR
123+ 0.58 EUR
164+ 0.44 EUR
174+ 0.41 EUR
Mindestbestellmenge: 118
FDS6990A FDS6990A.pdf
FDS6990A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS8447 description FDS8447.pdf
FDS8447
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 49nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 40V
Drain current: 12.8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1815 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.42 EUR
49+ 1.49 EUR
67+ 1.08 EUR
71+ 1.02 EUR
500+ 0.99 EUR
Mindestbestellmenge: 30
FDS8449 FDS8449.pdf
FDS8449
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1513 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
72+ 1 EUR
103+ 0.7 EUR
109+ 0.66 EUR
Mindestbestellmenge: 54
FDS86141 FDS86141.pdf
FDS86141
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; 2.5W; SO8
Drain-source voltage: 100V
Drain current: 7A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS86240 fds86240-d.pdf
Hersteller: ONSEMI
FDS86240 SMD N channel transistors
Produkt ist nicht verfügbar
FDS86242 fds86242-d.pdf
FDS86242
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4.1A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 126mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS8638 fds8638-d.pdf
FDS8638
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 6.3Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDS8813NZ ONSM-S-A0003584271-1.pdf?t.download=true&u=5oefqw
FDS8813NZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8858CZ fds8858cz-d.pdf
FDS8858CZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 8.6/-7.3A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 30/-30V
Drain current: 8.6/-7.3A
On-state resistance: 28.8/24.3mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 46/24nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25/±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8870 FDS8870.pdf
FDS8870
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Mounting: SMD
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 112nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Drain current: 18A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8876 FAIRS24633-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
FDS8876 SMD N channel transistors
Produkt ist nicht verfügbar
FDS8880 FDS8880.pdf
FDS8880
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
95+0.76 EUR
107+ 0.67 EUR
143+ 0.5 EUR
152+ 0.47 EUR
Mindestbestellmenge: 95
FDS8884 FDS8884.pdf
FDS8884
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
120+0.6 EUR
143+ 0.5 EUR
200+ 0.36 EUR
218+ 0.33 EUR
Mindestbestellmenge: 120
FDS8896 fds8896-d.pdf
Hersteller: ONSEMI
FDS8896 SMD N channel transistors
Produkt ist nicht verfügbar
FDS89141 FDS89141.pdf
FDS89141
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; 31W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2086 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.86 EUR
22+ 3.4 EUR
29+ 2.53 EUR
30+ 2.39 EUR
500+ 2.33 EUR
1000+ 2.3 EUR
Mindestbestellmenge: 19
FDS89161 FDS89161.pdf
FDS89161
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2346 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
46+ 1.57 EUR
53+ 1.36 EUR
56+ 1.29 EUR
500+ 1.23 EUR
Mindestbestellmenge: 41
FDS89161LZ fds89161lz-d.pdf
FDS89161LZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8935 fds8935-d.pdf
FDS8935
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.1A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 308mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8949 FDS8949.pdf
FDS8949
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 6A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 11nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 206 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.13 EUR
64+ 1.13 EUR
84+ 0.86 EUR
88+ 0.82 EUR
500+ 0.79 EUR
Mindestbestellmenge: 34
FDS8958A FDS8958A_F085.pdf
FDS8958A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40/80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1488 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
110+ 0.65 EUR
126+ 0.57 EUR
146+ 0.49 EUR
154+ 0.46 EUR
Mindestbestellmenge: 76
FDS8958B FAIRS46398-1.pdf?t.download=true&u=5oefqw
FDS8958B
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.4/-4.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20/±25V
On-state resistance: 39/72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8978 ONSM-S-A0003584183-1.pdf?t.download=true&u=5oefqw
FDS8978
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; Idm: 49A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 49A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS8984 FDS8984.pdf
FDS8984
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS9400A fds9400a-d.pdf FAIRS15620-1.pdf?t.download=true&u=5oefqw
FDS9400A
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS9435A FDS9435A.pdf
FDS9435A
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
25+ 2.86 EUR
39+ 1.83 EUR
107+ 0.67 EUR
Mindestbestellmenge: 9
FDS9926A FDS9926A.pdf
FDS9926A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1355 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
110+0.65 EUR
123+ 0.58 EUR
158+ 0.45 EUR
167+ 0.43 EUR
2500+ 0.41 EUR
Mindestbestellmenge: 110
FDS9933A fds9933a-d.pdf
FDS9933A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; Idm: -20A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDS9934C FDS9934C.pdf
FDS9934C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 6.5/-5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12/±10V
On-state resistance: 50/90mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
fds9945 FDS9945.pdf
fds9945
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.64 EUR
118+ 0.6 EUR
2500+ 0.42 EUR
Mindestbestellmenge: 112
FDS9958 FDS9958.pdf
FDS9958
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1277 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
62+1.16 EUR
78+ 0.92 EUR
96+ 0.75 EUR
111+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 62
FDT1600N10ALZ fdt1600n10alz-d.pdf
FDT1600N10ALZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 10.42W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1765 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
114+ 0.63 EUR
129+ 0.56 EUR
145+ 0.49 EUR
154+ 0.47 EUR
Mindestbestellmenge: 49
FDT3612 fdt3612-d.pdf
FDT3612
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 3W; SOT223
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.7A
On-state resistance: 245mΩ
Type of transistor: N-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDT3N40TF fdt3n40-d.pdf
FDT3N40TF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDT439N fdt439n-d.pdf
Hersteller: ONSEMI
FDT439N SMD N channel transistors
auf Bestellung 1154 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.67 EUR
112+ 0.64 EUR
117+ 0.61 EUR
Mindestbestellmenge: 43
FDT458P FDT458P.pdf
FDT458P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223
Technology: PowerTrench®
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3.4A
On-state resistance: 210mΩ
Gate charge: 3.5nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
auf Bestellung 3964 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
120+0.6 EUR
132+ 0.54 EUR
179+ 0.4 EUR
193+ 0.37 EUR
Mindestbestellmenge: 120
FDT86102LZ FDT86102LZ.pdf
FDT86102LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.6A; 2.2W; SOT223
Technology: PowerTrench®
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.2W
On-state resistance: 46mΩ
Polarisation: unipolar
Gate charge: 25nC
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 6.6A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
FDT86106LZ fdt86106lz-d.pdf
FDT86106LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.2W
On-state resistance: 189mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 232 464 696 928 1160 1392 1624 1637 1638 1639 1640 1641 1642 1643 1644 1645 1646 1647 1856 2088 2320 2329  [ Nächste Seite >> ]