FDS86242 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.75 EUR |
5000+ | 0.72 EUR |
12500+ | 0.68 EUR |
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Technische Details FDS86242 onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V, Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V.
Weitere Produktangebote FDS86242 nach Preis ab 0.71 EUR bis 1.81 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDS86242 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS86242 | Hersteller : onsemi / Fairchild | MOSFETs 150V N-Channel PowerTrench MOSFET |
auf Bestellung 44833 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS86242 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 4.1A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V |
auf Bestellung 24497 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS86242 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS86242 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS86242 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS86242 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4.1A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 126mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FDS86242 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4.1A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 126mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |