FDS9400A Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET P-CH 30V 3.4A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
auf Bestellung 26104 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 574+ | 0.84 EUR |
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Technische Details FDS9400A Fairchild Semiconductor
Description: MOSFET P-CH 30V 3.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V.
Weitere Produktangebote FDS9400A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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FDS9400A | Hersteller : ON Semiconductor |
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FDS9400A | Hersteller : ON Semiconductor / Fairchild |
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07+ SO-8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDS9400A | Hersteller : FAIRCHILD |
09+ |
auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDS9400A | Hersteller : FAIRCHILD |
SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS9400A | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 3.4A 8-Pin SOIC T/R |
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FDS9400A | Hersteller : ONSEMI |
Description: ONSEMI - FDS9400A - Leistungs-MOSFET, p-Kanal, 30 V, 3.4 A, 0.105 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 3.4 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.5 Gate-Source-Schwellenspannung, max.: 1.8 Verlustleistung: 2.5 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.105 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.105 SVHC: No SVHC (25-Jun-2020) |
Produkt ist nicht verfügbar |
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FDS9400A | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -10A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -10A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS9400A | Hersteller : onsemi |
Description: MOSFET P-CH 30V 3.4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDS9400A | Hersteller : onsemi |
Description: MOSFET P-CH 30V 3.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDS9400A | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -10A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -10A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |