![FGH50N3 FGH50N3](https://www.mouser.com/images/fairchildsemiconductor/lrg/TO_247_3_t.jpg)
auf Bestellung 1726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 16.42 EUR |
10+ | 14.85 EUR |
100+ | 11.97 EUR |
250+ | 10.72 EUR |
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Technische Details FGH50N3 onsemi / Fairchild
Description: IGBT PT 300V 75A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/135ns, Switching Energy: 130µJ (on), 92µJ (off), Test Condition: 180V, 30A, 5Ohm, 15V, Gate Charge: 180 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 463 W.
Weitere Produktangebote FGH50N3
Foto | Bezeichnung | Hersteller | Beschreibung |
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FGH50N3 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGH50N3 | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 300V Collector current: 75A Power dissipation: 463W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 228nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH50N3 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: PT Td (on/off) @ 25°C: 20ns/135ns Switching Energy: 130µJ (on), 92µJ (off) Test Condition: 180V, 30A, 5Ohm, 15V Gate Charge: 180 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 240 A Power - Max: 463 W |
Produkt ist nicht verfügbar |
|
FGH50N3 | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 300V Collector current: 75A Power dissipation: 463W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 228nC Kind of package: tube |
Produkt ist nicht verfügbar |