FDMS8820 ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.77 EUR |
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Technische Details FDMS8820 ON Semiconductor
Description: MOSFET N-CH 30V 28A/116A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V, Power Dissipation (Max): 2.5W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V.
Weitere Produktangebote FDMS8820 nach Preis ab 0.77 EUR bis 2.06 EUR
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FDMS8820 | Hersteller : onsemi |
 Description: MOSFET N-CH 30V 28A/116A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8820 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8820 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8820 | Hersteller : onsemi / Fairchild |
MOSFET NCh 30V 116A 2.4mOhm |
auf Bestellung 18530 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8820 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 28A/116A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V |
auf Bestellung 9991 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS8820 | Hersteller : ON Semiconductor |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS8820 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS8820 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS8820 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS8820 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Gate charge: 88nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 634A Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 101A On-state resistance: 2.8mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS8820 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56 Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Gate charge: 88nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 634A Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 101A On-state resistance: 2.8mΩ |
Produkt ist nicht verfügbar |