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FDP038AN06A0 ON Semiconductor
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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41+ | 3.75 EUR |
42+ | 3.54 EUR |
50+ | 2.95 EUR |
100+ | 2.43 EUR |
250+ | 2.28 EUR |
500+ | 2.16 EUR |
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Technische Details FDP038AN06A0 ON Semiconductor
Description: MOSFET N-CH 60V 17A/80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V.
Weitere Produktangebote FDP038AN06A0 nach Preis ab 2.16 EUR bis 5.83 EUR
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FDP038AN06A0 | Hersteller : ON Semiconductor |
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auf Bestellung 748 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP038AN06A0 | Hersteller : onsemi / Fairchild |
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auf Bestellung 6471 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP038AN06A0 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP038AN06A0 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP038AN06A0 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP038AN06A0 | Hersteller : ON Semiconductor |
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auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP038AN06A0 Produktcode: 51728 |
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Produkt ist nicht verfügbar
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FDP038AN06A0 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDP038AN06A0 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |