![FDN359AN FDN359AN](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2588/SOT-23-3%20PKG.jpg)
FDN359AN onsemi
![fdn359an-d.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.28 EUR |
6000+ | 0.25 EUR |
9000+ | 0.24 EUR |
15000+ | 0.23 EUR |
21000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDN359AN onsemi
Description: MOSFET N-CH 30V 2.7A SUPERSOT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V.
Weitere Produktangebote FDN359AN nach Preis ab 0.23 EUR bis 1.18 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FDN359AN | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3035 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
![]() |
FDN359AN | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
auf Bestellung 3035 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
FDN359AN | Hersteller : onsemi / Fairchild |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 150-154 Tag (e) |
|
||||||||||||||||
![]() |
FDN359AN | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
auf Bestellung 37408 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDN359AN | Hersteller : ONSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.046ohm |
auf Bestellung 7263 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
![]() |
FDN359AN | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
FDN359AN | Hersteller : Fairchild |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
|