FDMT800120DC onsemi
Hersteller: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
auf Bestellung 2313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.45 EUR |
10+ | 8.95 EUR |
100+ | 7.46 EUR |
500+ | 6.58 EUR |
1000+ | 5.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMT800120DC onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc), Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Dual Cool™88, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V.
Weitere Produktangebote FDMT800120DC nach Preis ab 5.97 EUR bis 10.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDMT800120DC | Hersteller : onsemi / Fairchild | MOSFET 120V NChnl Dual Cool PowerTrench MOSFET |
auf Bestellung 2421 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
FDMT800120DC | Hersteller : ON Semiconductor |
auf Bestellung 25990 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
FDMT800120DC | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 120V 20A 8-Pin QFN EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
FDMT800120DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8 Kind of package: reel; tape Gate charge: 107nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 767A Mounting: SMD Case: DFNW8 Drain-source voltage: 120V Drain current: 81A On-state resistance: 7.7mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
FDMT800120DC | Hersteller : onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
FDMT800120DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8 Kind of package: reel; tape Gate charge: 107nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 767A Mounting: SMD Case: DFNW8 Drain-source voltage: 120V Drain current: 81A On-state resistance: 7.7mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar |
Produkt ist nicht verfügbar |