FDP2614 ON Semiconductor
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 5.58 EUR |
| 30+ | 5.12 EUR |
| 50+ | 4.52 EUR |
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Technische Details FDP2614 ON Semiconductor
Description: MOSFET N-CH 200V 62A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V, Power Dissipation (Max): 260W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V.
Weitere Produktangebote FDP2614 nach Preis ab 3.68 EUR bis 7.57 EUR
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FDP2614 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP2614 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 39.3A; 260W; TO220-3 Mounting: THT Case: TO220-3 Drain-source voltage: 200V Drain current: 39.3A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 260W Polarisation: unipolar Kind of package: tube Gate charge: 99nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP2614 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 39.3A; 260W; TO220-3 Mounting: THT Case: TO220-3 Drain-source voltage: 200V Drain current: 39.3A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 260W Polarisation: unipolar Kind of package: tube Gate charge: 99nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±30V |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP2614 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 62A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V |
auf Bestellung 9517 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP2614 | Hersteller : ON Semiconductor |
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auf Bestellung 3960 Stücke: Lieferzeit 21-28 Tag (e) |
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FDP2614 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP2614 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 62A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |