Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75999) > Seite 1146 nach 1267
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMTH6004SPSQ-13 | DIODES INCORPORATED |
 DMTH6004SPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6005LFG-13 | DIODES INCORPORATED | DMTH6005LFG-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6005LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 150A; 3.9W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 3.9W Pulsed drain current: 150A Gate charge: 47.1nC Polarisation: unipolar Drain current: 70A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 10mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6005LK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 150A; 3.9W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 3.9W Pulsed drain current: 150A Gate charge: 47.1nC Polarisation: unipolar Drain current: 70A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 10mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6005LPS-13 | DIODES INCORPORATED |
DMTH6005LPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6005LPSQ-13 | DIODES INCORPORATED | DMTH6005LPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6006LPSWQ-13 | DIODES INCORPORATED |
DMTH6006LPSWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6006SPS-13 | DIODES INCORPORATED |
DMTH6006SPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6009LK3-13 | DIODES INCORPORATED |
DMTH6009LK3-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6009LK3Q-13 | DIODES INCORPORATED |
DMTH6009LK3Q-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6009LPS-13 | DIODES INCORPORATED |
DMTH6009LPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6009LPSQ-13 | DIODES INCORPORATED |
DMTH6009LPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 130A; 3.1W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.9A Pulsed drain current: 130A Power dissipation: 3.1W Case: TO252 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 41.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6010LK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 130A; 3.1W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.9A Pulsed drain current: 130A Power dissipation: 3.1W Case: TO252 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 41.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6010LPD-13 | DIODES INCORPORATED |
DMTH6010LPD-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010LPDQ-13 | DIODES INCORPORATED |
DMTH6010LPDQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010LPS-13 | DIODES INCORPORATED |
DMTH6010LPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010LPSQ-13 | DIODES INCORPORATED |
DMTH6010LPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010LPSWQ-13 | DIODES INCORPORATED |
DMTH6010LPSWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010SCT | DIODES INCORPORATED |
DMTH6010SCT SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010SK3-13 | DIODES INCORPORATED |
DMTH6010SK3-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010SK3Q-13 | DIODES INCORPORATED |
DMTH6010SK3Q-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6010SPS-13 | DIODES INCORPORATED |
DMTH6010SPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6012LPSW-13 | DIODES INCORPORATED |
DMTH6012LPSW-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6012LPSWQ-13 | DIODES INCORPORATED |
DMTH6012LPSWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6015LPDWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W Type of transistor: N-MOSFET x2 Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Power dissipation: 2.6W On-state resistance: 27mΩ Polarisation: unipolar Gate charge: 14.3nC Gate-source voltage: ±16V Pulsed drain current: 140A Kind of channel: enhanced Drain-source voltage: 60V Drain current: 6.6A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LFDFW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; Idm: 70A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.6A Pulsed drain current: 70A Power dissipation: 2.3W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 27.5mΩ Mounting: SMD Gate charge: 15.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LFDFWQ-13 | DIODES INCORPORATED | DMTH6016LFDFWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6016LFDFWQ-7R | DIODES INCORPORATED |
DMTH6016LFDFWQ-7R SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6016LFVW-13 | DIODES INCORPORATED | DMTH6016LFVW-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6016LFVW-7 | DIODES INCORPORATED | DMTH6016LFVW-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6016LFVWQ-13 | DIODES INCORPORATED | DMTH6016LFVWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH6016LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 160A; 2.38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 29A Pulsed drain current: 160A Power dissipation: 2.38W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 15.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 70A; 3.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.6A Pulsed drain current: 70A Power dissipation: 3.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 70A; 3.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.6A Pulsed drain current: 70A Power dissipation: 3.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LPD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LPDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 50A Power dissipation: 2.5W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; Idm: 145A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Pulsed drain current: 145A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMTH6016LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.2A; 1.4W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.2A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; Idm: 145A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Pulsed drain current: 145A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH61M5SPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 160A Pulsed drain current: 900A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 130.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH61M8LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 160A Pulsed drain current: 900A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 115.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH61M8LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 160A Pulsed drain current: 900A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 115.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH61M8SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 860A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 860A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 130.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH61M8SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 860A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 860A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 130.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH62M8LPS-13 | DIODES INCORPORATED | DMTH62M8LPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH69M8LFVWQ-7 | DIODES INCORPORATED |
DMTH69M8LFVWQ-7 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH8001STLW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1080A; 6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 190A Pulsed drain current: 1.08kA Power dissipation: 6W Case: PowerDI1012-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 138nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH8001STLWQ-13 | DIODES INCORPORATED |
DMTH8001STLWQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH8003SPS-13 | DIODES INCORPORATED |
DMTH8003SPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH8004LPS-13 | DIODES INCORPORATED | DMTH8004LPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH8008LFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 280A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 37.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH8008LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH8008LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 64A Pulsed drain current: 360A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 41.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH8008LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 64A Pulsed drain current: 360A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 41.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH8008SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 360A; 3.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 65A Pulsed drain current: 360A Power dissipation: 3.4W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH8012LK3-13 | DIODES INCORPORATED |
DMTH8012LK3-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH8012LK3Q-13 | DIODES INCORPORATED |
DMTH8012LK3Q-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| DMTH8012LPS-13 | DIODES INCORPORATED |
DMTH8012LPS-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
| DMTH6004SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6004SPSQ-13 SMD N channel transistors
DMTH6004SPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6005LFG-13 |
Hersteller: DIODES INCORPORATED
DMTH6005LFG-13 SMD N channel transistors
DMTH6005LFG-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6005LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 150A; 3.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 3.9W
Pulsed drain current: 150A
Gate charge: 47.1nC
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 150A; 3.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 3.9W
Pulsed drain current: 150A
Gate charge: 47.1nC
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6005LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 150A; 3.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 3.9W
Pulsed drain current: 150A
Gate charge: 47.1nC
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 150A; 3.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 3.9W
Pulsed drain current: 150A
Gate charge: 47.1nC
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6005LPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6005LPS-13 SMD N channel transistors
DMTH6005LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6005LPSQ-13 |
Hersteller: DIODES INCORPORATED
DMTH6005LPSQ-13 SMD N channel transistors
DMTH6005LPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6006LPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6006LPSWQ-13 SMD N channel transistors
DMTH6006LPSWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6006SPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6006SPS-13 SMD N channel transistors
DMTH6006SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6009LK3-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6009LK3-13 SMD N channel transistors
DMTH6009LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6009LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6009LK3Q-13 SMD N channel transistors
DMTH6009LK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6009LPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6009LPS-13 SMD N channel transistors
DMTH6009LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6009LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6009LPSQ-13 SMD N channel transistors
DMTH6009LPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 130A; 3.1W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 130A
Power dissipation: 3.1W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 130A; 3.1W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 130A
Power dissipation: 3.1W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6010LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 130A; 3.1W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 130A
Power dissipation: 3.1W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 130A; 3.1W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 130A
Power dissipation: 3.1W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6010LPD-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6010LPD-13 SMD N channel transistors
DMTH6010LPD-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010LPDQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6010LPDQ-13 SMD N channel transistors
DMTH6010LPDQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010LPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6010LPS-13 SMD N channel transistors
DMTH6010LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6010LPSQ-13 SMD N channel transistors
DMTH6010LPSQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010LPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6010LPSWQ-13 SMD N channel transistors
DMTH6010LPSWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010SCT |
|
Hersteller: DIODES INCORPORATED
DMTH6010SCT SMD N channel transistors
DMTH6010SCT SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010SK3-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6010SK3-13 SMD N channel transistors
DMTH6010SK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010SK3Q-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6010SK3Q-13 SMD N channel transistors
DMTH6010SK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6010SPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6010SPS-13 SMD N channel transistors
DMTH6010SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6012LPSW-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6012LPSW-13 SMD N channel transistors
DMTH6012LPSW-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6012LPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH6012LPSWQ-13 SMD N channel transistors
DMTH6012LPSWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6015LPDWQ-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W
Type of transistor: N-MOSFET x2
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 2.6W
On-state resistance: 27mΩ
Polarisation: unipolar
Gate charge: 14.3nC
Gate-source voltage: ±16V
Pulsed drain current: 140A
Kind of channel: enhanced
Drain-source voltage: 60V
Drain current: 6.6A
Anzahl je Verpackung: 2500 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W
Type of transistor: N-MOSFET x2
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 2.6W
On-state resistance: 27mΩ
Polarisation: unipolar
Gate charge: 14.3nC
Gate-source voltage: ±16V
Pulsed drain current: 140A
Kind of channel: enhanced
Drain-source voltage: 60V
Drain current: 6.6A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6016LFDFW-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; Idm: 70A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Pulsed drain current: 70A
Power dissipation: 2.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; Idm: 70A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Pulsed drain current: 70A
Power dissipation: 2.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMTH6016LFDFWQ-13 |
Hersteller: DIODES INCORPORATED
DMTH6016LFDFWQ-13 SMD N channel transistors
DMTH6016LFDFWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6016LFDFWQ-7R |
|
Hersteller: DIODES INCORPORATED
DMTH6016LFDFWQ-7R SMD N channel transistors
DMTH6016LFDFWQ-7R SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6016LFVW-13 |
Hersteller: DIODES INCORPORATED
DMTH6016LFVW-13 SMD N channel transistors
DMTH6016LFVW-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6016LFVW-7 |
Hersteller: DIODES INCORPORATED
DMTH6016LFVW-7 SMD N channel transistors
DMTH6016LFVW-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6016LFVWQ-13 |
Hersteller: DIODES INCORPORATED
DMTH6016LFVWQ-13 SMD N channel transistors
DMTH6016LFVWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH6016LFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 160A; 2.38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 160A
Power dissipation: 2.38W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 15.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 160A; 2.38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 160A
Power dissipation: 2.38W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 15.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMTH6016LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 70A; 3.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 70A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 70A; 3.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 70A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH6016LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 70A; 3.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 70A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 70A; 3.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Pulsed drain current: 70A
Power dissipation: 3.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6016LPD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6016LPDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 50A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6016LPS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; Idm: 145A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Pulsed drain current: 145A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; Idm: 145A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Pulsed drain current: 145A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH6016LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH6016LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.2A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.2A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH6016LSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; Idm: 145A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Pulsed drain current: 145A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; Idm: 145A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Pulsed drain current: 145A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH61M5SPSWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH61M8LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 115.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 115.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH61M8LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 115.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; Idm: 900A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 115.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH61M8SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 860A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 860A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 130.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 860A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 860A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 130.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH61M8SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 860A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 860A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 130.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 860A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 860A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 130.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH62M8LPS-13 |
Hersteller: DIODES INCORPORATED
DMTH62M8LPS-13 SMD N channel transistors
DMTH62M8LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH69M8LFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
DMTH69M8LFVWQ-7 SMD N channel transistors
DMTH69M8LFVWQ-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH8001STLW-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1080A; 6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.08kA
Power dissipation: 6W
Case: PowerDI1012-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1080A; 6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.08kA
Power dissipation: 6W
Case: PowerDI1012-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| DMTH8001STLWQ-13 |
|
Hersteller: DIODES INCORPORATED
DMTH8001STLWQ-13 SMD N channel transistors
DMTH8001STLWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH8003SPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH8003SPS-13 SMD N channel transistors
DMTH8003SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH8004LPS-13 |
Hersteller: DIODES INCORPORATED
DMTH8004LPS-13 SMD N channel transistors
DMTH8004LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH8008LFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 280A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 280A
Power dissipation: 2.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 37.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMTH8008LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMTH8008LPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH8008LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 64A
Pulsed drain current: 360A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 41.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH8008SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 360A; 3.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Pulsed drain current: 360A
Power dissipation: 3.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 360A; 3.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Pulsed drain current: 360A
Power dissipation: 3.4W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMTH8012LK3-13 |
|
Hersteller: DIODES INCORPORATED
DMTH8012LK3-13 SMD N channel transistors
DMTH8012LK3-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH8012LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
DMTH8012LK3Q-13 SMD N channel transistors
DMTH8012LK3Q-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMTH8012LPS-13 |
|
Hersteller: DIODES INCORPORATED
DMTH8012LPS-13 SMD N channel transistors
DMTH8012LPS-13 SMD N channel transistors
Produkt ist nicht verfügbar