Produkte > DIODES INCORPORATED > DMTH8003SPS-13
DMTH8003SPS-13

DMTH8003SPS-13 Diodes Incorporated

DMTH8003SPS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
auf Bestellung 19980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.37 EUR
5000+ 1.32 EUR
12500+ 1.28 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details DMTH8003SPS-13 Diodes Incorporated

Description: MOSFET N-CH 80V 100A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V, Power Dissipation (Max): 2.9W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V.

Weitere Produktangebote DMTH8003SPS-13 nach Preis ab 1.35 EUR bis 3.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMTH8003SPS-13 DMTH8003SPS-13 Hersteller : Diodes Incorporated DIOD_S_A0004567368_1-2542505.pdf MOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.99 EUR
10+ 2.48 EUR
100+ 1.99 EUR
250+ 1.83 EUR
500+ 1.67 EUR
1000+ 1.42 EUR
2500+ 1.35 EUR
DMTH8003SPS-13 DMTH8003SPS-13 Hersteller : Diodes Incorporated DMTH8003SPS.pdf Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
auf Bestellung 22120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.04 EUR
10+ 2.53 EUR
100+ 2.01 EUR
500+ 1.7 EUR
1000+ 1.44 EUR
Mindestbestellmenge: 6
DMTH8003SPS-13 Hersteller : DIODES INCORPORATED DMTH8003SPS.pdf DMTH8003SPS-13 SMD N channel transistors
Produkt ist nicht verfügbar