DMTH61M8SPSQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.6 EUR |
| 5000+ | 1.54 EUR |
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Technische Details DMTH61M8SPSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 215A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V, Power Dissipation (Max): 3.2W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH61M8SPSQ-13 nach Preis ab 1.68 EUR bis 3.54 EUR
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DMTH61M8SPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 860A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 860A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 130.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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DMTH61M8SPSQ-13 | Hersteller : Diodes Incorporated |
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| DMTH61M8SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 860A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 860A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 130.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |