Produkte > DIODES INCORPORATED > DMTH69M8LFVWQ-7
DMTH69M8LFVWQ-7

DMTH69M8LFVWQ-7 Diodes Incorporated

DMTH69M8LFVWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.43 EUR
6000+ 0.4 EUR
10000+ 0.37 EUR
Mindestbestellmenge: 2000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMTH69M8LFVWQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V-60V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote DMTH69M8LFVWQ-7 nach Preis ab 0.48 EUR bis 1.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMTH69M8LFVWQ-7 DMTH69M8LFVWQ-7 Hersteller : Diodes Incorporated DMTH69M8LFVWQ.pdf Description: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 11390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.13 EUR
19+ 0.97 EUR
100+ 0.67 EUR
500+ 0.56 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
DMTH69M8LFVWQ-7 DMTH69M8LFVWQ-7 Hersteller : Diodes Incorporated DIOD_S_A0011114909_1-2543712.pdf MOSFET MOSFET BVDSS: 41V 60V PowerDI3333-8/SWP T&R 2K
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.3 EUR
10+ 1.15 EUR
100+ 0.89 EUR
250+ 0.87 EUR
Mindestbestellmenge: 3
DMTH69M8LFVWQ-7 Hersteller : DIODES INCORPORATED DMTH69M8LFVWQ.pdf DMTH69M8LFVWQ-7 SMD N channel transistors
Produkt ist nicht verfügbar