Type-UX;-;-8.jpg "DMTH6016LFVWQ-7")
DMTH6016LFVWQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 41A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.4 EUR |
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Technische Details DMTH6016LFVWQ-7 Diodes Incorporated
Description: MOSFET N-CH 60V 41A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Power Dissipation (Max): 1.17W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6016LFVWQ-7 nach Preis ab 0.45 EUR bis 1.23 EUR
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DMTH6016LFVWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 41A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 1.17W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 3455 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6016LFVWQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 7385 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFVWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 160A; 2.38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 29A Pulsed drain current: 160A Power dissipation: 2.38W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 15.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LFVWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 160A; 2.38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 29A Pulsed drain current: 160A Power dissipation: 2.38W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 15.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |