DMTH8008LFGQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.82 EUR |
| 6000+ | 0.79 EUR |
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Technische Details DMTH8008LFGQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V, Power Dissipation (Max): 1.2W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH8008LFGQ-13 nach Preis ab 0.86 EUR bis 2.16 EUR
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DMTH8008LFGQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 9138 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH8008LFGQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 3K |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH8008LFGQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 280A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 37.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH8008LFGQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 280A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 280A Power dissipation: 2.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 37.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |