Technische Details DMTH6015LPDWQ-13 Diodes Inc
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W, Type of transistor: N-MOSFET x2, Case: PowerDI5060-8, Mounting: SMD, Kind of package: reel; tape, Application: automotive industry, Power dissipation: 2.6W, On-state resistance: 27mΩ, Polarisation: unipolar, Gate charge: 14.3nC, Gate-source voltage: ±16V, Pulsed drain current: 140A, Kind of channel: enhanced, Drain-source voltage: 60V, Drain current: 6.6A, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMTH6015LPDWQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DMTH6015LPDWQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W Type of transistor: N-MOSFET x2 Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Power dissipation: 2.6W On-state resistance: 27mΩ Polarisation: unipolar Gate charge: 14.3nC Gate-source voltage: ±16V Pulsed drain current: 140A Kind of channel: enhanced Drain-source voltage: 60V Drain current: 6.6A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMTH6015LPDWQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W Type of transistor: N-MOSFET x2 Case: PowerDI5060-8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Power dissipation: 2.6W On-state resistance: 27mΩ Polarisation: unipolar Gate charge: 14.3nC Gate-source voltage: ±16V Pulsed drain current: 140A Kind of channel: enhanced Drain-source voltage: 60V Drain current: 6.6A |
Produkt ist nicht verfügbar |