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DMTH6015LPDWQ-13 Diodes Inc


dmth6015lpdwq.pdf Hersteller: Diodes Inc
Dual N-Channel Enhancement Mode MOSFET
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Technische Details DMTH6015LPDWQ-13 Diodes Inc

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W, Type of transistor: N-MOSFET x2, Case: PowerDI5060-8, Mounting: SMD, Kind of package: reel; tape, Application: automotive industry, Power dissipation: 2.6W, On-state resistance: 27mΩ, Polarisation: unipolar, Gate charge: 14.3nC, Gate-source voltage: ±16V, Pulsed drain current: 140A, Kind of channel: enhanced, Drain-source voltage: 60V, Drain current: 6.6A, Anzahl je Verpackung: 2500 Stücke.

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DMTH6015LPDWQ-13 Hersteller : DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W
Type of transistor: N-MOSFET x2
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 2.6W
On-state resistance: 27mΩ
Polarisation: unipolar
Gate charge: 14.3nC
Gate-source voltage: ±16V
Pulsed drain current: 140A
Kind of channel: enhanced
Drain-source voltage: 60V
Drain current: 6.6A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMTH6015LPDWQ-13 Hersteller : DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.6A; Idm: 140A; 2.6W
Type of transistor: N-MOSFET x2
Case: PowerDI5060-8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 2.6W
On-state resistance: 27mΩ
Polarisation: unipolar
Gate charge: 14.3nC
Gate-source voltage: ±16V
Pulsed drain current: 140A
Kind of channel: enhanced
Drain-source voltage: 60V
Drain current: 6.6A
Produkt ist nicht verfügbar