DMTH6005LK3Q-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 90A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 432500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.84 EUR |
| 5000+ | 0.8 EUR |
| 12500+ | 0.77 EUR |
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Technische Details DMTH6005LK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 60V 90A TO252-2, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.1W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6005LK3Q-13 nach Preis ab 0.81 EUR bis 2.04 EUR
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DMTH6005LK3Q-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 2474 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6005LK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 90A TO252-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 434513 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6005LK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 150A; 3.9W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 3.9W Pulsed drain current: 150A Gate charge: 47.1nC Polarisation: unipolar Drain current: 70A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 10mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6005LK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 150A; 3.9W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 3.9W Pulsed drain current: 150A Gate charge: 47.1nC Polarisation: unipolar Drain current: 70A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 10mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |