DMTH6016LSDQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 7.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 227500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.71 EUR |
| 12500+ | 0.7 EUR |
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Technische Details DMTH6016LSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 7.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, 1.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V, Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6016LSDQ-13 nach Preis ab 0.77 EUR bis 1.81 EUR
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DMTH6016LSDQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 3903 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6016LSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 7.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W, 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 227603 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; Idm: 145A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Pulsed drain current: 145A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; Idm: 145A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Pulsed drain current: 145A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |