auf Bestellung 86287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.33 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.57 EUR |
| 3000+ | 0.48 EUR |
| 6000+ | 0.46 EUR |
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Technische Details DMTH6016LFDFWQ-7R Diodes Incorporated
Description: MOSFET N-CH 60V 9.4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Power Dissipation (Max): 1.06W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (SWP) (Type F), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6016LFDFWQ-7R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMTH6016LFDFWQ-7R | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 9.4A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.06W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1396302 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6016LFDFWQ-7R | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 9.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.06W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1395000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFDFWQ-7R | Hersteller : DIODES INCORPORATED |
DMTH6016LFDFWQ-7R SMD N channel transistors |
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