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DMTH8001STLWQ-13

DMTH8001STLWQ-13 Diodes Incorporated

DMTH8001STLWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+4.03 EUR
Mindestbestellmenge: 1500
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Technische Details DMTH8001STLWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V POWERDI10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Power Dissipation (Max): 6W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: POWERDI1012-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V.

Weitere Produktangebote DMTH8001STLWQ-13 nach Preis ab 4.03 EUR bis 8.69 EUR

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DMTH8001STLWQ-13 DMTH8001STLWQ-13 Hersteller : Diodes Incorporated DMTH8001STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
auf Bestellung 37583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.05 EUR
10+ 5.1 EUR
100+ 4.12 EUR
500+ 4.03 EUR
Mindestbestellmenge: 3
DMTH8001STLWQ-13 Hersteller : Diodes Incorporated DMTH8001STLWQ.pdf MOSFET MOSFET BVDSS: 61V~100V PowerDI1012-8 T&R 1.5K
auf Bestellung 1798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.69 EUR
10+ 7.3 EUR
25+ 7.09 EUR
100+ 5.91 EUR
250+ 5.74 EUR
500+ 5.26 EUR
1000+ 4.84 EUR
DMTH8001STLWQ-13 Hersteller : DIODES INCORPORATED DMTH8001STLWQ.pdf DMTH8001STLWQ-13 SMD N channel transistors
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