Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1236 nach 1259
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| DFLS1150-7 | DIODES INCORPORATED |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 150V; 1A; PowerDI®123; reel,tape Type of diode: Schottky rectifying Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.82V Case: PowerDI®123 Semiconductor structure: single diode Max. forward impulse current: 50A Load current: 1A Max. off-state voltage: 150V |
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| DFLS1150Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 1A; 13ns; PowerDI®123 Type of diode: Schottky rectifying Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.82V Case: PowerDI®123 Semiconductor structure: single diode Leakage current: 2µA Application: automotive industry Max. forward impulse current: 50A Load current: 1A Max. off-state voltage: 150V Capacitance: 28pF Reverse recovery time: 13ns |
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AP3445LW6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.7...5.5V DC Output voltage: 0.6...5.5V DC Output current: 2A Case: SOT26 Mounting: SMD Frequency: 0.8...1.2MHz Topology: buck Operating temperature: -40...85°C Duty cycle factor: 0...100% |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZDT6702TA | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; Darlington,complementary pair Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair; Darlington Collector-emitter voltage: 60V Collector current: 1.75A Power dissipation: 2.25W Case: SM8 Pulsed collector current: 4A Current gain: 5k Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
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DMC3028LSDX-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30/-30V Drain current: 7.6/-7.2A On-state resistance: 0.027/0.025Ω Type of transistor: N/P-MOSFET |
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| DMP3028LFDE-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.3W Polarisation: unipolar Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: U-DFN2020-6 Drain-source voltage: -30V Drain current: -6.6A On-state resistance: 38mΩ Type of transistor: P-MOSFET |
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| DMP3028LFDE-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.3W Polarisation: unipolar Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: U-DFN2020-6 Drain-source voltage: -30V Drain current: -6.6A On-state resistance: 38mΩ Type of transistor: P-MOSFET |
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| DMP3028LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: TO252 Drain-source voltage: -30V Drain current: -22A On-state resistance: 25mΩ Type of transistor: P-MOSFET |
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| DMP3028LK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -40A Case: TO252 Drain-source voltage: -30V Drain current: -8.6A On-state resistance: 38mΩ Type of transistor: P-MOSFET |
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| DMP3028LPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.12W On-state resistance: 38mΩ Polarisation: unipolar Drain current: -17A Drain-source voltage: -30V Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET Pulsed drain current: -70A |
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AP7343D-30W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.32V Output voltage: 3V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.7...5.25V Manufacturer series: AP7343 Integrated circuit features: output discharge; shutdown mode control input |
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| AP7343D-31FS4-7B | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.1V; 0.3A; X2DFN4; SMD Output current: 0.3A Voltage drop: 0.29V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.7...5.25V Integrated circuit features: output discharge; shutdown mode control input Kind of package: reel; tape Manufacturer series: AP7343 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...85°C Case: X2DFN4 Tolerance: ±1% Output voltage: 3.1V |
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| AP7343D-32FS4-7B | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.2V; 0.3A; X2DFN4; SMD Output current: 0.3A Voltage drop: 0.29V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.7...5.25V Integrated circuit features: output discharge; shutdown mode control input Kind of package: reel; tape Manufacturer series: AP7343 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...85°C Case: X2DFN4 Tolerance: ±1% Output voltage: 3.2V |
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AP7343D-36W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.31V Output voltage: 3.6V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.7...5.25V Manufacturer series: AP7343 Integrated circuit features: output discharge; shutdown mode control input |
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AP7343Q-30W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.32V Output voltage: 3V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.7...5.25V Manufacturer series: AP7343Q Integrated circuit features: shutdown mode control input |
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AP7343Q-33W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.31V Output voltage: 3.3V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.7...5.25V Manufacturer series: AP7343Q Integrated circuit features: shutdown mode control input |
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DMN3032LE-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.8W Polarisation: unipolar Drain current: 4.1A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 29mΩ |
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| DMN3032LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.7W Gate charge: 10.6nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 42mΩ |
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| DMN3032LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.7W Gate charge: 10.6nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 42mΩ |
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BZX84C43-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 43V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
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| AP7315-33FS4-7B | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; X2DFN4; SMD Output current: 0.15A Voltage drop: 0.29V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.7...5.25V Kind of package: reel; tape Manufacturer series: AP7315 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...85°C Case: X2DFN4 Tolerance: ±1% Output voltage: 3.3V |
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| AP7315D-33FS4-7B | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; X2DFN4; SMD Output current: 0.15A Voltage drop: 0.29V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.7...5.25V Integrated circuit features: output discharge; shutdown mode control input Kind of package: reel; tape Manufacturer series: AP7315 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...85°C Case: X2DFN4 Tolerance: ±1% Output voltage: 3.3V |
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| AP7351D-12FS4-7B | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; X2DFN4; SMD Output current: 0.15A Voltage drop: 0.9V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.4...5.5V Integrated circuit features: output discharge; shutdown mode control input Kind of package: reel; tape Manufacturer series: AP7351D Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...85°C Case: X2DFN4 Tolerance: ±2% Output voltage: 1.2V |
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DMG2307LQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 1.9W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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DMP10H400SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Drain current: -8A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V |
auf Bestellung 1469 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ20CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRB20150CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Case: D2PAK Kind of package: reel; tape Leakage current: 10mA Max. forward impulse current: 170A |
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| MBRB20150CT | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; tube Mounting: SMD Leakage current: 10mA Max. off-state voltage: 150V Semiconductor structure: common cathode; double Kind of package: tube Case: D2PAK Type of diode: Schottky rectifying Load current: 10A x2 Max. forward impulse current: 170A Max. forward voltage: 0.9V |
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| MBRD20150CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; TO252/DPAK Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Case: TO252/DPAK Kind of package: reel; tape Leakage current: 10mA Max. forward impulse current: 170A |
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AP7330-W5-7 | DIODES INCORPORATED |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Mounting: SMD Number of channels: 1 Case: SOT25 Operating temperature: -40...85°C Integrated circuit features: shutdown mode control input Kind of package: reel; tape Output current: 0.3A Input voltage: 1.8...5.5V Manufacturer series: AP7330 Kind of voltage regulator: adjustable; LDO; linear Tolerance: ±1% |
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AP7330D-W5-7 | DIODES INCORPORATED |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Mounting: SMD Number of channels: 1 Case: SOT25 Operating temperature: -40...85°C Integrated circuit features: output discharge; shutdown mode control input Kind of package: reel; tape Output current: 0.3A Input voltage: 1.8...5.5V Manufacturer series: AP7330 Kind of voltage regulator: adjustable; LDO; linear Tolerance: ±1% |
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| SDT30A100CTFP | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 0.73V Leakage current: 20mA |
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SDM03MT40-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW Max. off-state voltage: 40V Load current: 30mA Max. forward impulse current: 0.2A Max. forward voltage: 0.37V Case: SOT26 Kind of package: reel; tape Semiconductor structure: triple independent Mounting: SMD Power dissipation: 0.225W Type of diode: Schottky switching Capacitance: 2pF |
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SDM03MT40A-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW Max. off-state voltage: 40V Load current: 30mA Max. forward impulse current: 0.2A Max. forward voltage: 0.37V Case: SOT26 Kind of package: reel; tape Semiconductor structure: triple independent Mounting: SMD Power dissipation: 0.225W Type of diode: Schottky switching Capacitance: 2pF |
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ZUMT619TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 1A Power dissipation: 0.5W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 215MHz |
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FZT853TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
auf Bestellung 713 Stücke: Lieferzeit 14-21 Tag (e) |
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ZX5T851GTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 1.2W Case: SOT223 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDS360Q-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; PowerDI®5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.76V Case: PowerDI®5 Kind of package: reel; tape Leakage current: 15mA Max. forward impulse current: 100A Application: automotive industry |
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DMN62D0UDW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.41W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN62D0UDW-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2225 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN62D0UDWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.41W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN62D0UT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.26A Pulsed drain current: 1.2A Power dissipation: 0.34W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN62D0UW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN62D0UW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.32W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.32W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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DMN62D0UWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN62D0UWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMN6017SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252 Kind of package: reel; tape Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 8.8A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 3.3W Polarisation: unipolar Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A |
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DMN601DMK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 470mA Pulsed drain current: 0.85A Power dissipation: 0.98W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 304pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN601TK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 150mW; SOT523 Kind of package: reel; tape Mounting: SMD Case: SOT523 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
Produkt ist nicht verfügbar |
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DMN601WK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
Produkt ist nicht verfügbar |
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DMN601WKQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
Produkt ist nicht verfügbar |
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DMN601WKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
Produkt ist nicht verfügbar |
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DMN6066SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 2.14W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A |
Produkt ist nicht verfügbar |
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DMN6066SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 4A On-state resistance: 97mΩ Type of transistor: N-MOSFET Power dissipation: 2.81W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 23A |
Produkt ist nicht verfügbar |
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| DMN6069SE-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223 Kind of package: reel; tape Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 3.3A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A |
Produkt ist nicht verfügbar |
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| DMN6069SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 4.5A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A |
Produkt ist nicht verfügbar |
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| DMN6069SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 4.5A On-state resistance: 63mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A |
Produkt ist nicht verfügbar |
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| DMN6069SFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 25A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMN6069SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 25A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN53D0L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| DFLS1150-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; PowerDI®123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.82V
Case: PowerDI®123
Semiconductor structure: single diode
Max. forward impulse current: 50A
Load current: 1A
Max. off-state voltage: 150V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; PowerDI®123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.82V
Case: PowerDI®123
Semiconductor structure: single diode
Max. forward impulse current: 50A
Load current: 1A
Max. off-state voltage: 150V
Produkt ist nicht verfügbar
| DFLS1150Q-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; 13ns; PowerDI®123
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.82V
Case: PowerDI®123
Semiconductor structure: single diode
Leakage current: 2µA
Application: automotive industry
Max. forward impulse current: 50A
Load current: 1A
Max. off-state voltage: 150V
Capacitance: 28pF
Reverse recovery time: 13ns
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 1A; 13ns; PowerDI®123
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.82V
Case: PowerDI®123
Semiconductor structure: single diode
Leakage current: 2µA
Application: automotive industry
Max. forward impulse current: 50A
Load current: 1A
Max. off-state voltage: 150V
Capacitance: 28pF
Reverse recovery time: 13ns
Produkt ist nicht verfügbar
| AP3445LW6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 2A
Case: SOT26
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 2A
Case: SOT26
Mounting: SMD
Frequency: 0.8...1.2MHz
Topology: buck
Operating temperature: -40...85°C
Duty cycle factor: 0...100%
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 345+ | 0.21 EUR |
| 380+ | 0.19 EUR |
| 425+ | 0.17 EUR |
| 475+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| ZDT6702TA |
|
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; Darlington,complementary pair
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair; Darlington
Collector-emitter voltage: 60V
Collector current: 1.75A
Power dissipation: 2.25W
Case: SM8
Pulsed collector current: 4A
Current gain: 5k
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; Darlington,complementary pair
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair; Darlington
Collector-emitter voltage: 60V
Collector current: 1.75A
Power dissipation: 2.25W
Case: SM8
Pulsed collector current: 4A
Current gain: 5k
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
| DMC3028LSDX-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
On-state resistance: 0.027/0.025Ω
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 7.6/-7.2A
On-state resistance: 0.027/0.025Ω
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
| DMP3028LFDE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: U-DFN2020-6
Drain-source voltage: -30V
Drain current: -6.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: U-DFN2020-6
Drain-source voltage: -30V
Drain current: -6.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| DMP3028LFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: U-DFN2020-6
Drain-source voltage: -30V
Drain current: -6.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: U-DFN2020-6
Drain-source voltage: -30V
Drain current: -6.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| DMP3028LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: TO252
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: TO252
Drain-source voltage: -30V
Drain current: -22A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| DMP3028LK3Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: TO252
Drain-source voltage: -30V
Drain current: -8.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Case: TO252
Drain-source voltage: -30V
Drain current: -8.6A
On-state resistance: 38mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| DMP3028LPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.12W
On-state resistance: 38mΩ
Polarisation: unipolar
Drain current: -17A
Drain-source voltage: -30V
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -70A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.12W
On-state resistance: 38mΩ
Polarisation: unipolar
Drain current: -17A
Drain-source voltage: -30V
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Pulsed drain current: -70A
Produkt ist nicht verfügbar
| AP7343D-30W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.32V
Output voltage: 3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7343
Integrated circuit features: output discharge; shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.32V
Output voltage: 3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7343
Integrated circuit features: output discharge; shutdown mode control input
Produkt ist nicht verfügbar
| AP7343D-31FS4-7B |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.1V; 0.3A; X2DFN4; SMD
Output current: 0.3A
Voltage drop: 0.29V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7343
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±1%
Output voltage: 3.1V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.1V; 0.3A; X2DFN4; SMD
Output current: 0.3A
Voltage drop: 0.29V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7343
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±1%
Output voltage: 3.1V
Produkt ist nicht verfügbar
| AP7343D-32FS4-7B |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.2V; 0.3A; X2DFN4; SMD
Output current: 0.3A
Voltage drop: 0.29V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7343
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±1%
Output voltage: 3.2V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.2V; 0.3A; X2DFN4; SMD
Output current: 0.3A
Voltage drop: 0.29V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7343
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±1%
Output voltage: 3.2V
Produkt ist nicht verfügbar
| AP7343D-36W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.31V
Output voltage: 3.6V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7343
Integrated circuit features: output discharge; shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.31V
Output voltage: 3.6V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7343
Integrated circuit features: output discharge; shutdown mode control input
Produkt ist nicht verfügbar
| AP7343Q-30W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.32V
Output voltage: 3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.32V
Output voltage: 3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP7343Q-33W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.31V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.31V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.7...5.25V
Manufacturer series: AP7343Q
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| DMN3032LE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 29mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 29mΩ
Produkt ist nicht verfügbar
| DMN3032LFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Produkt ist nicht verfügbar
| DMN3032LFDBQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Produkt ist nicht verfügbar
| BZX84C43-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| AP7315-33FS4-7B |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; X2DFN4; SMD
Output current: 0.15A
Voltage drop: 0.29V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Kind of package: reel; tape
Manufacturer series: AP7315
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±1%
Output voltage: 3.3V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; X2DFN4; SMD
Output current: 0.15A
Voltage drop: 0.29V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Kind of package: reel; tape
Manufacturer series: AP7315
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±1%
Output voltage: 3.3V
Produkt ist nicht verfügbar
| AP7315D-33FS4-7B |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; X2DFN4; SMD
Output current: 0.15A
Voltage drop: 0.29V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7315
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±1%
Output voltage: 3.3V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; X2DFN4; SMD
Output current: 0.15A
Voltage drop: 0.29V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7315
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±1%
Output voltage: 3.3V
Produkt ist nicht verfügbar
| AP7351D-12FS4-7B |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; X2DFN4; SMD
Output current: 0.15A
Voltage drop: 0.9V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7351D
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±2%
Output voltage: 1.2V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; X2DFN4; SMD
Output current: 0.15A
Voltage drop: 0.9V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7351D
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: X2DFN4
Tolerance: ±2%
Output voltage: 1.2V
Produkt ist nicht verfügbar
| DMG2307LQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.9W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -20A; 1.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.9W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| DMP10H400SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: -8A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: -8A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
auf Bestellung 1469 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.17 EUR |
| 147+ | 0.49 EUR |
| 167+ | 0.43 EUR |
| 192+ | 0.37 EUR |
| 203+ | 0.35 EUR |
| SMBJ20CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 335+ | 0.21 EUR |
| 465+ | 0.15 EUR |
| 525+ | 0.14 EUR |
| 615+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| MBRB20150CT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: D2PAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 170A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: D2PAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
| MBRB20150CT |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; tube
Mounting: SMD
Leakage current: 10mA
Max. off-state voltage: 150V
Semiconductor structure: common cathode; double
Kind of package: tube
Case: D2PAK
Type of diode: Schottky rectifying
Load current: 10A x2
Max. forward impulse current: 170A
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; D2PAK; tube
Mounting: SMD
Leakage current: 10mA
Max. off-state voltage: 150V
Semiconductor structure: common cathode; double
Kind of package: tube
Case: D2PAK
Type of diode: Schottky rectifying
Load current: 10A x2
Max. forward impulse current: 170A
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
| MBRD20150CT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; TO252/DPAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: TO252/DPAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 170A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 10Ax2; TO252/DPAK
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Case: TO252/DPAK
Kind of package: reel; tape
Leakage current: 10mA
Max. forward impulse current: 170A
Produkt ist nicht verfügbar
| AP7330-W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: SOT25
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Output current: 0.3A
Input voltage: 1.8...5.5V
Manufacturer series: AP7330
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±1%
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: SOT25
Operating temperature: -40...85°C
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Output current: 0.3A
Input voltage: 1.8...5.5V
Manufacturer series: AP7330
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±1%
Produkt ist nicht verfügbar
| AP7330D-W5-7 |
Hersteller: DIODES INCORPORATED
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: SOT25
Operating temperature: -40...85°C
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Output current: 0.3A
Input voltage: 1.8...5.5V
Manufacturer series: AP7330
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±1%
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: SOT25
Operating temperature: -40...85°C
Integrated circuit features: output discharge; shutdown mode control input
Kind of package: reel; tape
Output current: 0.3A
Input voltage: 1.8...5.5V
Manufacturer series: AP7330
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±1%
Produkt ist nicht verfügbar
| SDT30A100CTFP |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.73V
Leakage current: 20mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.73V
Leakage current: 20mA
Produkt ist nicht verfügbar
| SDM03MT40-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Mounting: SMD
Power dissipation: 0.225W
Type of diode: Schottky switching
Capacitance: 2pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Mounting: SMD
Power dissipation: 0.225W
Type of diode: Schottky switching
Capacitance: 2pF
Produkt ist nicht verfügbar
| SDM03MT40A-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Mounting: SMD
Power dissipation: 0.225W
Type of diode: Schottky switching
Capacitance: 2pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 30mA; SOT26; reel,tape; 225mW
Max. off-state voltage: 40V
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Case: SOT26
Kind of package: reel; tape
Semiconductor structure: triple independent
Mounting: SMD
Power dissipation: 0.225W
Type of diode: Schottky switching
Capacitance: 2pF
Produkt ist nicht verfügbar
| ZUMT619TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 500mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 215MHz
Produkt ist nicht verfügbar
| FZT853TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 713 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 67+ | 1.07 EUR |
| 80+ | 0.9 EUR |
| 120+ | 0.6 EUR |
| 129+ | 0.56 EUR |
| ZX5T851GTA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 77+ | 0.93 EUR |
| 112+ | 0.64 EUR |
| 126+ | 0.57 EUR |
| 141+ | 0.51 EUR |
| 146+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| PDS360Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 15mA
Max. forward impulse current: 100A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 15mA
Max. forward impulse current: 100A
Application: automotive industry
Produkt ist nicht verfügbar
| DMN62D0UDW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN62D0UDW-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2225 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 560+ | 0.13 EUR |
| 620+ | 0.12 EUR |
| 820+ | 0.087 EUR |
| 865+ | 0.083 EUR |
| DMN62D0UDWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 290mA; 410mW; SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.29A
Power dissipation: 0.41W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN62D0UT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.26A
Pulsed drain current: 1.2A
Power dissipation: 0.34W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.26A
Pulsed drain current: 1.2A
Power dissipation: 0.34W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN62D0UW-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN62D0UW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.32W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.32W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.32W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.32W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| DMN62D0UWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN62D0UWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN6017SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 8.8A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Drain-source voltage: 60V
Drain current: 8.8A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Produkt ist nicht verfügbar
| DMN601DMK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 470mA
Pulsed drain current: 0.85A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 304pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN601TK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 150mW; SOT523
Kind of package: reel; tape
Mounting: SMD
Case: SOT523
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 150mW; SOT523
Kind of package: reel; tape
Mounting: SMD
Case: SOT523
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
| DMN601WK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Kind of package: reel; tape
Mounting: SMD
Case: SOT323
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Kind of package: reel; tape
Mounting: SMD
Case: SOT323
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
| DMN601WKQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Kind of package: reel; tape
Mounting: SMD
Case: SOT323
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Kind of package: reel; tape
Mounting: SMD
Case: SOT323
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
| DMN601WKQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Kind of package: reel; tape
Mounting: SMD
Case: SOT323
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Kind of package: reel; tape
Mounting: SMD
Case: SOT323
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Produkt ist nicht verfügbar
| DMN6066SSDQ-13 |
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 3.5A
On-state resistance: 97mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 2.14W
Polarisation: unipolar
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 3.5A
On-state resistance: 97mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 2.14W
Polarisation: unipolar
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17A
Produkt ist nicht verfügbar
| DMN6066SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 4A
On-state resistance: 97mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.81W
Polarisation: unipolar
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 23A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 4A
On-state resistance: 97mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.81W
Polarisation: unipolar
Gate charge: 10.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 23A
Produkt ist nicht verfügbar
| DMN6069SE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Drain-source voltage: 60V
Drain current: 3.3A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Drain-source voltage: 60V
Drain current: 3.3A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Produkt ist nicht verfügbar
| DMN6069SFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Produkt ist nicht verfügbar
| DMN6069SFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 63mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 25A
Produkt ist nicht verfügbar
| DMN6069SFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN6069SFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 25A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN53D0L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; 540mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar