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DMN62D0UW-13

DMN62D0UW-13 Diodes Incorporated


Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 130000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.068 EUR
30000+ 0.066 EUR
50000+ 0.06 EUR
100000+ 0.053 EUR
Mindestbestellmenge: 10000
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Technische Details DMN62D0UW-13 Diodes Incorporated

Description: MOSFET N-CH 60V 340MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V.

Weitere Produktangebote DMN62D0UW-13 nach Preis ab 0.055 EUR bis 0.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN62D0UW-13 DMN62D0UW-13 Hersteller : Diodes Incorporated DIOD_S_A0002833589_1-2542043.pdf MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
auf Bestellung 12595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.51 EUR
10+ 0.36 EUR
100+ 0.15 EUR
1000+ 0.088 EUR
2500+ 0.083 EUR
10000+ 0.058 EUR
20000+ 0.055 EUR
Mindestbestellmenge: 6
DMN62D0UW-13 DMN62D0UW-13 Hersteller : Diodes Incorporated Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
101+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.088 EUR
5000+ 0.081 EUR
Mindestbestellmenge: 34
DMN62D0UW-13 DMN62D0UW-13 Hersteller : Diodes Zetex dmn62d0uw.pdf Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R
Produkt ist nicht verfügbar
DMN62D0UW-13 DMN62D0UW-13 Hersteller : Diodes Inc dmn62d0uw.pdf N-Channel Enhancement Mode Mosfet
Produkt ist nicht verfügbar
DMN62D0UW-13 DMN62D0UW-13 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMN62D0UW-13 DMN62D0UW-13 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 470mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar