![DMN6069SE-13 DMN6069SE-13](https://static6.arrow.com/aropdfconversion/arrowimages/9b7c043009bb1b14655b77288bf0ea697c495011/sot223.jpg)
DMN6069SE-13 Diodes Zetex
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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2500+ | 0.2 EUR |
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Technische Details DMN6069SE-13 Diodes Zetex
Description: MOSFET N-CH 60V 4.3A/10A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN6069SE-13 nach Preis ab 0.17 EUR bis 0.84 EUR
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DMN6069SE-13 | Hersteller : Diodes Zetex |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6069SE-13 | Hersteller : Diodes Zetex |
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auf Bestellung 350000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6069SE-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 357500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6069SE-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 12987 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6069SE-13 | Hersteller : Diodes Zetex |
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auf Bestellung 1927 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6069SE-13 | Hersteller : Diodes Zetex |
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auf Bestellung 1927 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6069SE-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 10A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 360249 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6069SE-13 | Hersteller : Diodes Inc |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6069SE-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMN6069SE-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223 Kind of package: reel; tape Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 3.3A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN6069SE-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.3A; Idm: 25A; 1.4W; SOT223 Kind of package: reel; tape Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 3.3A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A |
Produkt ist nicht verfügbar |