auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.41 EUR |
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Technische Details DMN6066SSS-13 Diodes Zetex
Description: MOSFET N-CH 60V 3.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V.
Weitere Produktangebote DMN6066SSS-13 nach Preis ab 0.44 EUR bis 1.34 EUR
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DMN6066SSS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 3.7A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 3.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6066SSS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 3.7A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMN6066SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 4A On-state resistance: 97mΩ Type of transistor: N-MOSFET Power dissipation: 2.81W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 23A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMN6066SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 23A; 2.81W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 4A On-state resistance: 97mΩ Type of transistor: N-MOSFET Power dissipation: 2.81W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 23A |
Produkt ist nicht verfügbar |