DMN601WK-7 Diodes Incorporated
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Description: MOSFET N-CH 60V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 189000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
9000+ | 0.087 EUR |
30000+ | 0.085 EUR |
75000+ | 0.071 EUR |
150000+ | 0.069 EUR |
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Technische Details DMN601WK-7 Diodes Incorporated
Description: MOSFET N-CH 60V 300MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote DMN601WK-7 nach Preis ab 0.072 EUR bis 0.58 EUR
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DMN601WK-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 51775 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN601WK-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 194055 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN601WK-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN601WK-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
Produkt ist nicht verfügbar |