Technische Details DMN601WKQ-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323, Kind of package: reel; tape, Mounting: SMD, Case: SOT323, Drain-source voltage: 60V, Drain current: 0.3A, On-state resistance: 3Ω, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 0.2W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 0.8A, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN601WKQ-13
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DMN601WKQ-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN601WKQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V SOT323 |
Produkt ist nicht verfügbar |
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DMN601WKQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
Produkt ist nicht verfügbar |