DMN6017SK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.35 EUR |
| 5000+ | 0.33 EUR |
| 12500+ | 0.31 EUR |
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Technische Details DMN6017SK3-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 43A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V.
Weitere Produktangebote DMN6017SK3-13 nach Preis ab 0.35 EUR bis 0.93 EUR
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DMN6017SK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 41V-60V |
auf Bestellung 3765 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6017SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CHANNEL 60V 43A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V |
auf Bestellung 21114 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN6017SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252 Kind of package: reel; tape Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 8.8A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 3.3W Polarisation: unipolar Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMN6017SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.8A; Idm: 70A; 3.3W; TO252 Kind of package: reel; tape Mounting: SMD Case: TO252 Drain-source voltage: 60V Drain current: 8.8A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 3.3W Polarisation: unipolar Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A |
Produkt ist nicht verfügbar |