Technische Details DMN6066SSDQ-13 Diodes Inc
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8, Kind of package: reel; tape, Mounting: SMD, Case: SO8, Drain-source voltage: 60V, Drain current: 3.5A, On-state resistance: 97mΩ, Type of transistor: N-MOSFET x2, Application: automotive industry, Power dissipation: 2.14W, Polarisation: unipolar, Gate charge: 10.3nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 17A, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMN6066SSDQ-13
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DMN6066SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 2.14W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMN6066SSDQ-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 41V 60V SO-8 T&R 2.5K |
Produkt ist nicht verfügbar |
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DMN6066SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 17A; 2.14W; SO8 Kind of package: reel; tape Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 2.14W Polarisation: unipolar Gate charge: 10.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A |
Produkt ist nicht verfügbar |