Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1235 nach 1259
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| AP9221SA-CC-HAC-7 | DIODES INCORPORATED |
 Category: Battery and battery cells controllersDescription: IC: Supervisor Integrated Circuit; battery charging controller Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: battery charging controller Supply voltage: 1.5...5.5V DC Case: U-DFN2030-6 Operating temperature: -40...85°C Mounting: SMD Kind of package: reel; tape Number of rechargeable batteries: 1 x Li+ |
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BST39TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 350V; 0.5A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Power dissipation: 1W Case: SOT89 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 70MHz |
auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR0580S1-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 80V; 0.5A; SOD123; reel,tape Kind of package: reel; tape Capacitance: 15pF Max. off-state voltage: 80V Max. forward voltage: 0.8V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 14A Type of diode: Schottky rectifying Mounting: SMD Case: SOD123 |
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DDTC124ECA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DDTC124EUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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DDTC124EUAQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ |
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DDTC124TE-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ |
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DDTC124TEQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Application: automotive industry |
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ADTC144EUAQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
auf Bestellung 8540 Stücke: Lieferzeit 14-21 Tag (e) |
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GBJ1508-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 15A Max. forward impulse current: 240A Electrical mounting: THT Version: flat Leads: flat pin Case: GBJ Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3007SPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -70A Pulsed drain current: -160A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±25V On-state resistance: 16mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMP3007SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -70A Pulsed drain current: -160A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±25V On-state resistance: 16mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced |
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S1K-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 4870 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTP2008ZTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 5.5A Power dissipation: 1.5W Case: SOT89 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 110MHz |
auf Bestellung 997 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTP2012GTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5.5A Power dissipation: 1.6W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 742 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTP2012ZTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4.3A Power dissipation: 1.5W Case: SOT89 Current gain: 10...300 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 1855 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXTP2014GTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 140V; 4A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 4A Power dissipation: 1.2W Case: SOT223 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
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ZXTP2014ZQTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 140V; 3A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Pulsed collector current: 10A Current gain: 5...255 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Application: automotive industry |
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| DMP4013LFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Pulsed drain current: -80A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced |
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| DMP4013LFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Pulsed drain current: -80A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| DMP4013LFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Pulsed drain current: -80A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| DMP4013SPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W Gate charge: 67nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -244A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: -40V Drain current: -9A On-state resistance: 23mΩ Type of transistor: P-MOSFET Power dissipation: 3.4W Polarisation: unipolar Kind of package: reel; tape |
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| DMP4013SPSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W Gate charge: 67nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -244A Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: -40V Drain current: -9A On-state resistance: 23mΩ Type of transistor: P-MOSFET Power dissipation: 3.4W Polarisation: unipolar Kind of package: reel; tape |
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| DMP4013LFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.3A Pulsed drain current: 80A Power dissipation: 1W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| SDT12A120P5-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 120V; 12A; PowerDI®5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.8V Case: PowerDI®5 Kind of package: reel; tape Leakage current: 35mA Max. forward impulse current: 300A |
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| 74AHC1G09SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: AHC |
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74AHC1G09W5-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: open drain Family: AHC |
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| SBR10200CTL-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; TO252/DPAK Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.94V Case: TO252/DPAK Kind of package: reel; tape Max. forward impulse current: 110A |
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| 74AUP1G126FS3-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN0808-4 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger |
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| 74AUP1G126FW4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger |
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| 74AUP1G126FX4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; bus driver; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: X2-DFN1409-6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: AUP Kind of input: with Schmitt trigger |
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74LVCE1G126W5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVCE; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SOT25 Manufacturer series: LVCE Supply voltage: 1.4...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of output: 3-state |
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DDZ12C-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±2.5% Semiconductor structure: single diode |
auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7115-25WG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT25; SMD Operating temperature: -40...85°C Case: SOT25 Output voltage: 2.5V Output current: 0.15A Voltage drop: 0.3V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...5.5V Kind of package: reel; tape Manufacturer series: AP7115 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% |
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ADC114YUQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 270mW; SOT363; R1: 10kΩ Case: SOT363 Mounting: SMD Frequency: 250MHz Kind of package: reel; tape Application: automotive industry Power dissipation: 0.27W Type of transistor: NPN Collector current: 0.1A Polarisation: bipolar Current gain: 80 Collector-emitter voltage: 50V Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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DDC114EU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT363 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 50mA Type of transistor: NPN x2 |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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DDC114TU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT363; 10kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT363 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 0.1A Type of transistor: NPN |
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DDC114YU-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SOT363 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 70mA Type of transistor: NPN x2 |
auf Bestellung 2280 Stücke: Lieferzeit 14-21 Tag (e) |
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DDC114YUQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT363; R1: 10kΩ Application: automotive industry Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SOT363 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 0.1A Type of transistor: NPN |
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DMN3190LDWQ-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 335mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.25W Polarisation: unipolar Gate charge: 2nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 2A Drain-source voltage: 30V Drain current: 1A |
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DMN53D0LDWQ-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.37A; Idm: 1A; 0.4W; SOT363 Mounting: SMD Features of semiconductor devices: ESD protected gate Case: SOT363 Power dissipation: 0.4W Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Drain-source voltage: 50V Drain current: 0.37A On-state resistance: 4.5Ω Type of transistor: N-MOSFET x2 |
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DMP45H4D9HJ3 | DIODES INCORPORATED |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251 Case: TO251 Mounting: THT Kind of package: tube Drain-source voltage: -450V Drain current: -3A On-state resistance: 4.9Ω Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -22.4A |
auf Bestellung 414 Stücke: Lieferzeit 14-21 Tag (e) |
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DMHC3025LSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 11.7/11.4nC Kind of channel: enhanced Pulsed drain current: 60...-30A Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 30/-30V Drain current: 6.1/-4.3A On-state resistance: 40/80mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.5W |
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ZVN4206AVSTZ | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.6A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
auf Bestellung 1873 Stücke: Lieferzeit 14-21 Tag (e) |
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SBR40150CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SBR®; THT; 150V; 20Ax2; TO220AB; tube Type of diode: Schottky rectifying Technology: SBR® Mounting: THT Max. off-state voltage: 150V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 280A Max. forward voltage: 0.9V |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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DGD2181MS8-13 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Mounting: SMD Output current: -2.3...1.9A Type of integrated circuit: driver Operating temperature: -40...125°C Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 10...20V DC |
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SDT5A50SA-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 5A; SMA; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Max. forward voltage: 0.52V Load current: 5A Semiconductor structure: single diode Case: SMA Mounting: SMD Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 90mA |
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AZ23C2V7-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
Produkt ist nicht verfügbar |
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ZVP4525ZTA | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.205A; 1.2W; SOT89 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -0.205A Power dissipation: 1.2W Case: SOT89 Gate-source voltage: ±40V On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BCM847BS-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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AP3428AKTTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: TSOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
auf Bestellung 2744 Stücke: Lieferzeit 14-21 Tag (e) |
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AP3428AWT-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: TSOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
Produkt ist nicht verfügbar |
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| AP3428DNTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: U-DFN2020-6 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
Produkt ist nicht verfügbar |
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AP3428KTTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.5...5.5V DC Output voltage: 0.6...5.5V DC Output current: 1A Case: TSOT25 Mounting: SMD Frequency: 1.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
auf Bestellung 2997 Stücke: Lieferzeit 14-21 Tag (e) |
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AP3429KTTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.7...5.5V DC Output voltage: 0.6...5.5V DC Output current: 2A Case: TSOT25 Mounting: SMD Frequency: 1MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 95% |
Produkt ist nicht verfügbar |
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LM2904TH-13 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 700kHz; 3÷36V; Ch: 2; TSSOP8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 0.7MHz Open-loop gain: 100dB Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 0.3V/μs Operating temperature: -40...85°C Input offset voltage: 2mV Kind of package: reel; tape Operating voltage: 3...36V |
auf Bestellung 1748 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ20A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 795 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ20A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 46.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMCJ36CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| B220Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape Application: automotive industry Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.5V Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Leakage current: 20mA Case: SMB Capacitance: 200pF Type of diode: Schottky rectifying Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
| AP9221SA-CC-HAC-7 |
|
Hersteller: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: Supervisor Integrated Circuit; battery charging controller
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: battery charging controller
Supply voltage: 1.5...5.5V DC
Case: U-DFN2030-6
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li+
Category: Battery and battery cells controllers
Description: IC: Supervisor Integrated Circuit; battery charging controller
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: battery charging controller
Supply voltage: 1.5...5.5V DC
Case: U-DFN2030-6
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li+
Produkt ist nicht verfügbar
| BST39TA |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 70MHz
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 182+ | 0.39 EUR |
| 265+ | 0.27 EUR |
| 348+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| MBR0580S1-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 0.5A; SOD123; reel,tape
Kind of package: reel; tape
Capacitance: 15pF
Max. off-state voltage: 80V
Max. forward voltage: 0.8V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 14A
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 0.5A; SOD123; reel,tape
Kind of package: reel; tape
Capacitance: 15pF
Max. off-state voltage: 80V
Max. forward voltage: 0.8V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 14A
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123
Produkt ist nicht verfügbar
| DDTC124ECA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
| DDTC124EUA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
| DDTC124EUAQ-7-F |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
| DDTC124TE-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Produkt ist nicht verfügbar
| DDTC124TEQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Application: automotive industry
Produkt ist nicht verfügbar
| ADTC144EUAQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 8540 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1270+ | 0.056 EUR |
| 1745+ | 0.041 EUR |
| 1970+ | 0.036 EUR |
| 2275+ | 0.031 EUR |
| 2405+ | 0.03 EUR |
| GBJ1508-F |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 240A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 240A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 2.03 EUR |
| 40+ | 1.82 EUR |
| 49+ | 1.47 EUR |
| 52+ | 1.4 EUR |
| DMP3007SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -160A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -160A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP3007SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -160A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -160A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -160A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 64.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| S1K-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 4870 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 770+ | 0.093 EUR |
| 1020+ | 0.07 EUR |
| 1400+ | 0.051 EUR |
| 1480+ | 0.048 EUR |
| ZXTP2008ZTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Power dissipation: 1.5W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 77+ | 0.93 EUR |
| 95+ | 0.75 EUR |
| 145+ | 0.49 EUR |
| 154+ | 0.47 EUR |
| ZXTP2012GTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 742 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 93+ | 0.77 EUR |
| 105+ | 0.68 EUR |
| 117+ | 0.61 EUR |
| 122+ | 0.59 EUR |
| 250+ | 0.57 EUR |
| ZXTP2012ZTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 4.3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4.3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 73+ | 0.99 EUR |
| 108+ | 0.67 EUR |
| 120+ | 0.6 EUR |
| 139+ | 0.51 EUR |
| 148+ | 0.49 EUR |
| ZXTP2014GTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 4A
Power dissipation: 1.2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 4A
Power dissipation: 1.2W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Produkt ist nicht verfügbar
| ZXTP2014ZQTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 10A
Current gain: 5...255
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 3A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Pulsed collector current: 10A
Current gain: 5...255
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Application: automotive industry
Produkt ist nicht verfügbar
| DMP4013LFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP4013LFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| DMP4013LFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 68.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| DMP4013SPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -244A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -40V
Drain current: -9A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.4W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -244A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -40V
Drain current: -9A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.4W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DMP4013SPSQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -244A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -40V
Drain current: -9A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.4W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -244A
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -40V
Drain current: -9A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.4W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DMP4013LFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.3A
Pulsed drain current: 80A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.3A
Pulsed drain current: 80A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SDT12A120P5-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 12A; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 35mA
Max. forward impulse current: 300A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 12A; PowerDI®5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 35mA
Max. forward impulse current: 300A
Produkt ist nicht verfügbar
| 74AHC1G09SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT353; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AHC
Produkt ist nicht verfügbar
| 74AHC1G09W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: open drain
Family: AHC
Produkt ist nicht verfügbar
| SBR10200CTL-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; TO252/DPAK
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.94V
Case: TO252/DPAK
Kind of package: reel; tape
Max. forward impulse current: 110A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 200V; 10A; TO252/DPAK
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.94V
Case: TO252/DPAK
Kind of package: reel; tape
Max. forward impulse current: 110A
Produkt ist nicht verfügbar
| 74AUP1G126FS3-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74AUP1G126FW4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74AUP1G126FX4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AUP
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74LVCE1G126W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVCE; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT25
Manufacturer series: LVCE
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT25; LVCE; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT25
Manufacturer series: LVCE
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: 3-state
Produkt ist nicht verfügbar
| DDZ12C-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 880+ | 0.082 EUR |
| AP7115-25WG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Case: SOT25
Output voltage: 2.5V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Manufacturer series: AP7115
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Case: SOT25
Output voltage: 2.5V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Manufacturer series: AP7115
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
| ADC114YUQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 270mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.27W
Type of transistor: NPN
Collector current: 0.1A
Polarisation: bipolar
Current gain: 80
Collector-emitter voltage: 50V
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 270mW; SOT363; R1: 10kΩ
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.27W
Type of transistor: NPN
Collector current: 0.1A
Polarisation: bipolar
Current gain: 80
Collector-emitter voltage: 50V
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DDC114EU-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 50mA
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 50mA
Type of transistor: NPN x2
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 400+ | 0.17 EUR |
| DDC114TU-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT363; 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT363; 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN
Produkt ist nicht verfügbar
| DDC114YU-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 70mA
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 70mA; 200mW; SOT363; R1: 10kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 70mA
Type of transistor: NPN x2
auf Bestellung 2280 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1400+ | 0.051 EUR |
| 1560+ | 0.046 EUR |
| 2020+ | 0.035 EUR |
| 2140+ | 0.033 EUR |
| DDC114YUQ-7-F |
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT363; R1: 10kΩ
Application: automotive industry
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT363; R1: 10kΩ
Application: automotive industry
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN
Produkt ist nicht verfügbar
| DMN3190LDWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.25W
Polarisation: unipolar
Gate charge: 2nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 2A
Drain-source voltage: 30V
Drain current: 1A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.25W
Polarisation: unipolar
Gate charge: 2nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 2A
Drain-source voltage: 30V
Drain current: 1A
Produkt ist nicht verfügbar
| DMN53D0LDWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.37A; Idm: 1A; 0.4W; SOT363
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Case: SOT363
Power dissipation: 0.4W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 50V
Drain current: 0.37A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.37A; Idm: 1A; 0.4W; SOT363
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Case: SOT363
Power dissipation: 0.4W
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 50V
Drain current: 0.37A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
| DMP45H4D9HJ3 |
|
Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
Drain-source voltage: -450V
Drain current: -3A
On-state resistance: 4.9Ω
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -22.4A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
Drain-source voltage: -450V
Drain current: -3A
On-state resistance: 4.9Ω
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -22.4A
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 74+ | 0.97 EUR |
| 106+ | 0.68 EUR |
| 119+ | 0.6 EUR |
| 137+ | 0.52 EUR |
| 145+ | 0.49 EUR |
| DMHC3025LSDQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 11.7/11.4nC
Kind of channel: enhanced
Pulsed drain current: 60...-30A
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 6.1/-4.3A
On-state resistance: 40/80mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.5W
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.1/-4.3A; Idm: 60÷-30A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 11.7/11.4nC
Kind of channel: enhanced
Pulsed drain current: 60...-30A
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30/-30V
Drain current: 6.1/-4.3A
On-state resistance: 40/80mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.5W
Produkt ist nicht verfügbar
| ZVN4206AVSTZ |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 1873 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 77+ | 0.93 EUR |
| 92+ | 0.79 EUR |
| 166+ | 0.43 EUR |
| 175+ | 0.41 EUR |
| 1000+ | 0.4 EUR |
| SBR40150CT |
|
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 150V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 150V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 0.9V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SBR®; THT; 150V; 20Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: THT
Max. off-state voltage: 150V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 0.9V
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.5 EUR |
| 53+ | 1.36 EUR |
| 59+ | 1.22 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
| DGD2181MS8-13 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Mounting: SMD
Output current: -2.3...1.9A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Mounting: SMD
Output current: -2.3...1.9A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar
| SDT5A50SA-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 5A; SMA; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward voltage: 0.52V
Load current: 5A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 90mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 5A; SMA; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward voltage: 0.52V
Load current: 5A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 90mA
Produkt ist nicht verfügbar
| AZ23C2V7-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
| ZVP4525ZTA |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.205A; 1.2W; SOT89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.205A
Power dissipation: 1.2W
Case: SOT89
Gate-source voltage: ±40V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.205A; 1.2W; SOT89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.205A
Power dissipation: 1.2W
Case: SOT89
Gate-source voltage: ±40V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BCM847BS-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 440+ | 0.16 EUR |
| AP3428AKTTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2744 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 268+ | 0.27 EUR |
| 331+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| AP3428AWT-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
| AP3428DNTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: U-DFN2020-6
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: U-DFN2020-6
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
| AP3428KTTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; Uout: 0.6÷5.5VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.5...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 1A
Case: TSOT25
Mounting: SMD
Frequency: 1.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 247+ | 0.29 EUR |
| 360+ | 0.2 EUR |
| 380+ | 0.19 EUR |
| AP3429KTTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 2A
Case: TSOT25
Mounting: SMD
Frequency: 1MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 0.6÷5.5VDC; 2A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 0.6...5.5V DC
Output current: 2A
Case: TSOT25
Mounting: SMD
Frequency: 1MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 95%
Produkt ist nicht verfügbar
| LM2904TH-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; 3÷36V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Open-loop gain: 100dB
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.3V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Operating voltage: 3...36V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 700kHz; 3÷36V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 0.7MHz
Open-loop gain: 100dB
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.3V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Operating voltage: 3...36V
auf Bestellung 1748 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 184+ | 0.39 EUR |
| 355+ | 0.2 EUR |
| 439+ | 0.16 EUR |
| 494+ | 0.15 EUR |
| 522+ | 0.14 EUR |
| SMBJ20A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 240+ | 0.3 EUR |
| 410+ | 0.18 EUR |
| 470+ | 0.15 EUR |
| 535+ | 0.13 EUR |
| SMCJ20A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 46.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMCJ36CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| B220Q-13-F |
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMB
Capacitance: 200pF
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMB
Capacitance: 200pF
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Produkt ist nicht verfügbar