![DMP4013LFGQ-13 DMP4013LFGQ-13](https://static6.arrow.com/aropdfconversion/arrowimages/d685ab740ab0a5ef2f94a010a16d9d5566b9678/powerdi3333-8.jpg)
DMP4013LFGQ-13 Diodes Zetex
auf Bestellung 566 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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566+ | 0.56 EUR |
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Technische Details DMP4013LFGQ-13 Diodes Zetex
Description: MOSFET P-CH 40V 10.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP4013LFGQ-13 nach Preis ab 0.5 EUR bis 1.51 EUR
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DMP4013LFGQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 1698000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4013LFGQ-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 2589 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4013LFGQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 1699600 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP4013LFGQ-13 | Hersteller : Diodes Inc |
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auf Bestellung 566 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP4013LFGQ-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMP4013LFGQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Gate charge: 68.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP4013LFGQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Gate charge: 68.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |