Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75519) > Seite 1189 nach 1259
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ZXMN10A25GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.7A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN4A06GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.075Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 775 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A08GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.8A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.8A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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ZXMN6A09GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.2A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.06Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 777 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN7A11GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 70V; 3A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 3A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP10A18GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -3A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 567 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP2120G4TA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -0.2A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -0.2A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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ZXMP3A16GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.07Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP4A16GQTA | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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ZXMP4A16GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -5.1A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1102 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP6A17GQTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 416 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP7A17GQTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -70V; -1.6A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -70V Drain current: -1.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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DZTA42Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 2W Case: SOT223 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
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BCP5616QTC | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT223 Pulsed collector current: 2A Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry |
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ZVN0545GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 450V; 0.14A; Idm: 0.6A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 450V Drain current: 0.14A Pulsed drain current: 0.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 50Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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ZXMP6A13GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A Pulsed drain current: -7.8A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.595Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1955 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP6A17GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Pulsed drain current: -13.7A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP7A17GTA | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -70V; -2.6A; Idm: -9.6A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -70V Drain current: -2.6A Pulsed drain current: -9.6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 966 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3009LFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN6017SFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W Kind of package: reel; tape Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 28A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 140A |
Produkt ist nicht verfügbar |
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DMT10H072LFV-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 109mΩ Drain current: 3.7A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A |
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DMT10H072LFV-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 109mΩ Drain current: 3.7A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
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DMT3006LFV-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar On-state resistance: 11mΩ Drain current: 45A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |
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DMT3006LFVQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Application: automotive industry Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar On-state resistance: 11mΩ Drain current: 45A Drain-source voltage: 30V Kind of package: reel; tape Case: PowerDI3333-8 Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A |
Produkt ist nicht verfügbar |
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DMN3009LFVW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN3009LFVWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 90A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMP2035UVT-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMP2035UVTQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMP2035UVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMT10H009LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 12.5mΩ Drain current: 11A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A |
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DMT10H015LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 23.5mΩ Drain current: 8A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A |
Produkt ist nicht verfügbar |
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DMT10H015LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W Mounting: SMD Case: PowerDI3333-8 Type of transistor: N-MOSFET On-state resistance: 23.5mΩ Drain current: 8A Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.3nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 75A |
Produkt ist nicht verfügbar |
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DMT4011LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Case: PowerDI3333-8 Kind of package: reel; tape Mounting: SMD Power dissipation: 2W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 17.8mΩ Drain current: 8.6A Drain-source voltage: 40V Gate charge: 15.1nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 65A |
Produkt ist nicht verfügbar |
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DMT4011LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Case: PowerDI3333-8 Kind of package: reel; tape Mounting: SMD Power dissipation: 2W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 17.8mΩ Drain current: 8.6A Drain-source voltage: 40V Gate charge: 15.1nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 65A |
Produkt ist nicht verfügbar |
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DMN2009LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; Idm: 42A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.6A Drain-source voltage: 20V Pulsed drain current: 42A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 58.3nC |
Produkt ist nicht verfügbar |
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DMN2009USS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.7A Drain-source voltage: 20V Pulsed drain current: 100A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 34nC |
Produkt ist nicht verfügbar |
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DMN2027USS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10.7A Pulsed drain current: 45A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 19mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN3016LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.5A Pulsed drain current: 80A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN3033LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Polarisation: unipolar On-state resistance: 27mΩ Kind of package: reel; tape Drain current: 5.8A Drain-source voltage: 30V Case: SO8 Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2W |
Produkt ist nicht verfügbar |
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DMN3033LSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 2W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 27mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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DMNH4026SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 60A Power dissipation: 2W Gate charge: 19.1nC Polarisation: unipolar Drain current: 5.3A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 32mΩ |
Produkt ist nicht verfügbar |
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DMNH4026SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8 Kind of package: reel; tape Mounting: SMD Pulsed drain current: 60A Power dissipation: 2W Gate charge: 19.1nC Polarisation: unipolar Drain current: 5.3A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Case: SO8 On-state resistance: 32mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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DMP10H400SEQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V |
Produkt ist nicht verfügbar |
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DMP3035LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -80A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -8A On-state resistance: 36mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 30.7nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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DMPH6050SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.7A Pulsed drain current: -35A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 30.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMT6010LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 13.5A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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DMT8012LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 7.8A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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AP2552W6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
auf Bestellung 2821 Stücke: Lieferzeit 14-21 Tag (e) |
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AP22652W6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Output current: 2.1A Mounting: SMD Case: SOT26 On-state resistance: 65mΩ Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: low Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch |
Produkt ist nicht verfügbar |
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AP7115-12WG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD Operating temperature: -40...85°C Case: SOT25 Output voltage: 1.2V Output current: 0.15A Voltage drop: 0.3V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...5.5V Kind of package: reel; tape Manufacturer series: AP7115 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% |
Produkt ist nicht verfügbar |
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AP7311-12WG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD Type of integrated circuit: voltage regulator Case: SOT25 Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Output current: 0.15A Voltage drop: 300mV Kind of package: reel; tape Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7311 Output voltage: 1.2V Input voltage: 2...6V |
Produkt ist nicht verfügbar |
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AP7331-12WG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.55V Output voltage: 1.2V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7331 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP7343-12W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 720mV Output voltage: 1.2V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.7...5.25V Manufacturer series: AP7343 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP7366-12W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 250mV Output voltage: 1.2V Output current: 0.6A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.2...6V Manufacturer series: AP7366 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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74LVC1G32W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: push-pull Family: LVC |
Produkt ist nicht verfügbar |
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AP7315D-12W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.64V Output voltage: 1.2V Output current: 0.15A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.7...5.25V Manufacturer series: AP7315 Integrated circuit features: output discharge; shutdown mode control input |
Produkt ist nicht verfügbar |
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AP7343D-12W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 720mV Output voltage: 1.2V Output current: 0.3A Case: SOT25 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.7...5.25V Manufacturer series: AP7343 Integrated circuit features: output discharge; shutdown mode control input |
Produkt ist nicht verfügbar |
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AP7351D-12W5-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: SOT25 Integrated circuit features: output discharge; shutdown mode control input Operating temperature: -40...85°C Number of channels: 1 Kind of package: reel; tape Output voltage: 1.2V Output current: 0.15A Input voltage: 1.4...5.5V Manufacturer series: AP7351D Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% Voltage drop: 0.9V |
Produkt ist nicht verfügbar |
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74AHCT1G32W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: totem pole Family: AHCT |
Produkt ist nicht verfügbar |
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74LVCE1G32W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT25 Supply voltage: 1.4...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: totem pole Family: LVCE |
Produkt ist nicht verfügbar |
ZXMN10A25GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.37 EUR |
59+ | 1.23 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
250+ | 0.92 EUR |
ZXMN4A06GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.075Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.075Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
60+ | 1.2 EUR |
67+ | 1.07 EUR |
91+ | 0.79 EUR |
97+ | 0.74 EUR |
ZXMN6A08GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.8A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.8A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
ZXMN6A09GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.06Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.06Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 777 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
55+ | 1.3 EUR |
62+ | 1.16 EUR |
85+ | 0.84 EUR |
90+ | 0.8 EUR |
ZXMN7A11GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 3A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 3A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 1.34 EUR |
133+ | 0.54 EUR |
149+ | 0.48 EUR |
181+ | 0.4 EUR |
191+ | 0.37 EUR |
ZXMP10A18GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 567 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.02 EUR |
39+ | 1.84 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
ZXMP2120G4TA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.2A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.2A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -0.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
ZXMP3A16GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.07Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.07Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.19 EUR |
81+ | 0.89 EUR |
112+ | 0.64 EUR |
117+ | 0.61 EUR |
ZXMP4A16GQTA |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
ZXMP4A16GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1102 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
68+ | 1.05 EUR |
110+ | 0.65 EUR |
127+ | 0.57 EUR |
152+ | 0.47 EUR |
160+ | 0.45 EUR |
ZXMP6A17GQTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.5A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 416 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
75+ | 0.96 EUR |
164+ | 0.44 EUR |
174+ | 0.41 EUR |
ZXMP7A17GQTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -70V; -1.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -70V
Drain current: -1.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -70V; -1.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -70V
Drain current: -1.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DZTA42Q-13 |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 2W
Case: SOT223
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 2W
Case: SOT223
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
BCP5616QTC |
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Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 2A
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 2A
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Produkt ist nicht verfügbar
ZVN0545GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.14A; Idm: 0.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 0.14A
Pulsed drain current: 0.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 50Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.14A; Idm: 0.6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 0.14A
Pulsed drain current: 0.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 50Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
ZXMP6A13GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Pulsed drain current: -7.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.595Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.8A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Pulsed drain current: -7.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.595Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
148+ | 0.48 EUR |
165+ | 0.43 EUR |
222+ | 0.32 EUR |
235+ | 0.31 EUR |
ZXMP6A17GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Pulsed drain current: -13.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; Idm: -13.7A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Pulsed drain current: -13.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
100+ | 0.72 EUR |
117+ | 0.61 EUR |
160+ | 0.45 EUR |
193+ | 0.37 EUR |
ZXMP7A17GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -70V; -2.6A; Idm: -9.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -70V
Drain current: -2.6A
Pulsed drain current: -9.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -70V; -2.6A; Idm: -9.6A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -70V
Drain current: -2.6A
Pulsed drain current: -9.6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
60+ | 1.2 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
143+ | 0.5 EUR |
152+ | 0.47 EUR |
DMN3009LFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN6017SFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 28A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 140A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; Idm: 140A; 2W
Kind of package: reel; tape
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 28A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 140A
Produkt ist nicht verfügbar
DMT10H072LFV-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 109mΩ
Drain current: 3.7A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 109mΩ
Drain current: 3.7A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
DMT10H072LFV-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 109mΩ
Drain current: 3.7A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; Idm: 80A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 109mΩ
Drain current: 3.7A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
DMT3006LFV-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
On-state resistance: 11mΩ
Drain current: 45A
Drain-source voltage: 30V
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
On-state resistance: 11mΩ
Drain current: 45A
Drain-source voltage: 30V
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Produkt ist nicht verfügbar
DMT3006LFVQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Application: automotive industry
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
On-state resistance: 11mΩ
Drain current: 45A
Drain-source voltage: 30V
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Application: automotive industry
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
On-state resistance: 11mΩ
Drain current: 45A
Drain-source voltage: 30V
Kind of package: reel; tape
Case: PowerDI3333-8
Gate charge: 16.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Produkt ist nicht verfügbar
DMN3009LFVW-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3009LFVWQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 90A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMP2035UVT-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMP2035UVTQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMP2035UVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT10H009LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 11A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 200A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 12.5mΩ
Drain current: 11A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
DMT10H015LFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 23.5mΩ
Drain current: 8A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 23.5mΩ
Drain current: 8A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar
DMT10H015LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 23.5mΩ
Drain current: 8A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 75A; 2W
Mounting: SMD
Case: PowerDI3333-8
Type of transistor: N-MOSFET
On-state resistance: 23.5mΩ
Drain current: 8A
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.3nC
Drain-source voltage: 100V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 75A
Produkt ist nicht verfügbar
DMT4011LFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 17.8mΩ
Drain current: 8.6A
Drain-source voltage: 40V
Gate charge: 15.1nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 17.8mΩ
Drain current: 8.6A
Drain-source voltage: 40V
Gate charge: 15.1nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Produkt ist nicht verfügbar
DMT4011LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 17.8mΩ
Drain current: 8.6A
Drain-source voltage: 40V
Gate charge: 15.1nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Case: PowerDI3333-8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 17.8mΩ
Drain current: 8.6A
Drain-source voltage: 40V
Gate charge: 15.1nC
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Produkt ist nicht verfügbar
DMN2009LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; Idm: 42A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 12mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: 9.6A
Drain-source voltage: 20V
Pulsed drain current: 42A
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Gate charge: 58.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; Idm: 42A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 12mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: 9.6A
Drain-source voltage: 20V
Pulsed drain current: 42A
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Gate charge: 58.3nC
Produkt ist nicht verfügbar
DMN2009USS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 12mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: 9.7A
Drain-source voltage: 20V
Pulsed drain current: 100A
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 12mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: 9.7A
Drain-source voltage: 20V
Pulsed drain current: 100A
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Gate charge: 34nC
Produkt ist nicht verfügbar
DMN2027USS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10.7A
Pulsed drain current: 45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10.7A
Pulsed drain current: 45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3016LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.5A
Pulsed drain current: 80A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 25.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN3033LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Polarisation: unipolar
On-state resistance: 27mΩ
Kind of package: reel; tape
Drain current: 5.8A
Drain-source voltage: 30V
Case: SO8
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Polarisation: unipolar
On-state resistance: 27mΩ
Kind of package: reel; tape
Drain current: 5.8A
Drain-source voltage: 30V
Case: SO8
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2W
Produkt ist nicht verfügbar
DMN3033LSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
DMNH4026SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2W
Gate charge: 19.1nC
Polarisation: unipolar
Drain current: 5.3A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 32mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2W
Gate charge: 19.1nC
Polarisation: unipolar
Drain current: 5.3A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 32mΩ
Produkt ist nicht verfügbar
DMNH4026SSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2W
Gate charge: 19.1nC
Polarisation: unipolar
Drain current: 5.3A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.3A; Idm: 60A; 2W; SO8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2W
Gate charge: 19.1nC
Polarisation: unipolar
Drain current: 5.3A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
DMP10H400SEQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain current: -2.1A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain current: -2.1A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Produkt ist nicht verfügbar
DMP3035LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 36mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 30.7nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 36mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 30.7nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -80A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
DMPH6050SSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.7A
Pulsed drain current: -35A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.7A; Idm: -35A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.7A
Pulsed drain current: -35A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMT6010LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 13.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 13.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
DMT8012LSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 7.8A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 7.8A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
AP2552W6-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
auf Bestellung 2821 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
167+ | 0.43 EUR |
272+ | 0.26 EUR |
353+ | 0.2 EUR |
374+ | 0.19 EUR |
AP22652W6-7 |
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Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Output current: 2.1A
Mounting: SMD
Case: SOT26
On-state resistance: 65mΩ
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Output current: 2.1A
Mounting: SMD
Case: SOT26
On-state resistance: 65mΩ
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Produkt ist nicht verfügbar
AP7115-12WG-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Case: SOT25
Output voltage: 1.2V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Manufacturer series: AP7115
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD
Operating temperature: -40...85°C
Case: SOT25
Output voltage: 1.2V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Manufacturer series: AP7115
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
AP7311-12WG-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Case: SOT25
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Output current: 0.15A
Voltage drop: 300mV
Kind of package: reel; tape
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7311
Output voltage: 1.2V
Input voltage: 2...6V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Case: SOT25
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Output current: 0.15A
Voltage drop: 300mV
Kind of package: reel; tape
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7311
Output voltage: 1.2V
Input voltage: 2...6V
Produkt ist nicht verfügbar
AP7331-12WG-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 1.2V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7331
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.55V
Output voltage: 1.2V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7331
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP7343-12W5-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 720mV
Output voltage: 1.2V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7343
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 720mV
Output voltage: 1.2V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7343
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
AP7366-12W5-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 250mV
Output voltage: 1.2V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Manufacturer series: AP7366
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 250mV
Output voltage: 1.2V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.2...6V
Manufacturer series: AP7366
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
74LVC1G32W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
AP7315D-12W5-7 |
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.64V
Output voltage: 1.2V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7315
Integrated circuit features: output discharge; shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.64V
Output voltage: 1.2V
Output current: 0.15A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7315
Integrated circuit features: output discharge; shutdown mode control input
Produkt ist nicht verfügbar
AP7343D-12W5-7 |
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Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 720mV
Output voltage: 1.2V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7343
Integrated circuit features: output discharge; shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 720mV
Output voltage: 1.2V
Output current: 0.3A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.7...5.25V
Manufacturer series: AP7343
Integrated circuit features: output discharge; shutdown mode control input
Produkt ist nicht verfügbar
AP7351D-12W5-7 |
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: SOT25
Integrated circuit features: output discharge; shutdown mode control input
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: reel; tape
Output voltage: 1.2V
Output current: 0.15A
Input voltage: 1.4...5.5V
Manufacturer series: AP7351D
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Voltage drop: 0.9V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: SOT25
Integrated circuit features: output discharge; shutdown mode control input
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: reel; tape
Output voltage: 1.2V
Output current: 0.15A
Input voltage: 1.4...5.5V
Manufacturer series: AP7351D
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Voltage drop: 0.9V
Produkt ist nicht verfügbar
74AHCT1G32W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Produkt ist nicht verfügbar
74LVCE1G32W5-7 |
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Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar