ZXMP3A16GTA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 5.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.67 EUR |
| 2000+ | 0.64 EUR |
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Technische Details ZXMP3A16GTA Diodes Incorporated
Description: MOSFET P-CH 30V 5.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V.
Weitere Produktangebote ZXMP3A16GTA nach Preis ab 0.61 EUR bis 1.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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ZXMP3A16GTA | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 5.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP3A16GTA | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.07Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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ZXMP3A16GTA | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.07Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP3A16GTA | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 5.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP3A16GTA | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 5.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP3A16GTA | Hersteller : Diodes Incorporated |
MOSFET 30V P Chnl UMOS |
auf Bestellung 19081 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP3A16GTA | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 5.4A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V |
auf Bestellung 4762 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP3A16GTA | Hersteller : DIODES INC. |
Description: DIODES INC. - ZXMP3A16GTA - Leistungs-MOSFET, Anreicherungstyp, p-Kanal, 30 V, 5.4 A, 0.045 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2W Anzahl der Pins: 4Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 4300 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP3A16GTA | Hersteller : DIODES INC. |
Description: DIODES INC. - ZXMP3A16GTA - Leistungs-MOSFET, Anreicherungstyp, p-Kanal, 30 V, 5.4 A, 0.045 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2W Anzahl der Pins: 4Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 4300 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP3A16GTA | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 5.4A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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ZXMP3A16GTA | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 5.4A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |