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BCX5410TA BCX5410TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1740 Stücke:
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550+0.13 EUR
610+ 0.12 EUR
790+ 0.091 EUR
840+ 0.086 EUR
Mindestbestellmenge: 550
BCX5416TA BCX5416TA DIODES INCORPORATED BCX54x-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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FZT653TA FZT653TA DIODES INCORPORATED FZT653.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223
Case: SOT223
Mounting: SMD
Frequency: 175MHz
Kind of package: reel; tape
Power dissipation: 3W
Collector-emitter voltage: 120V
Collector current: 2A
Type of transistor: NPN
Polarisation: bipolar
auf Bestellung 1172 Stücke:
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67+1.07 EUR
160+ 0.45 EUR
188+ 0.38 EUR
218+ 0.33 EUR
228+ 0.31 EUR
Mindestbestellmenge: 67
DF1504S-T DF1504S-T DIODES INCORPORATED DF15005S-DF1510S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Case: DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Features of semiconductor devices: glass passivated
auf Bestellung 1506 Stücke:
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222+ 0.32 EUR
286+ 0.25 EUR
304+ 0.24 EUR
Mindestbestellmenge: 198
DF04S-T DF04S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
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391+ 0.18 EUR
414+ 0.17 EUR
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DF08S-T DF08S-T DIODES INCORPORATED DF005_10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 1397 Stücke:
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201+ 0.36 EUR
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262+ 0.27 EUR
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DF1510S-T DF1510S-T DIODES INCORPORATED DF15005S-DF1510S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A; DFS
Kind of package: reel; tape
Electrical mounting: SMT
Case: DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Features of semiconductor devices: glass passivated
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164+ 0.43 EUR
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DMN61D8L-7 DMN61D8L-7 DIODES INCORPORATED DMN61D8L-LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.37A; 0.39W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.37A
Power dissipation: 0.39W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
SBR12A45SP5-13 DIODES INCORPORATED SBR12A45SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 12A; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Capacitance: 1nF
Max. forward voltage: 0.6V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 75mA
Max. forward impulse current: 280A
Produkt ist nicht verfügbar
GBJ1510-F DIODES INCORPORATED GBJ15_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 240A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DMG302PU-13 DMG302PU-13 DIODES INCORPORATED DMG302PU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Case: SOT23
Drain-source voltage: -25V
Drain current: -140mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 0.35nC
Produkt ist nicht verfügbar
DMG302PU-7 DMG302PU-7 DIODES INCORPORATED DMG302PU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.45W
Drain-source voltage: -25V
Drain current: -0.14A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 0.35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Produkt ist nicht verfügbar
BC847BQ-7-F BC847BQ-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
DDZ5V6BQ-7 DDZ5V6BQ-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Leakage current: 50nA
Application: automotive industry
Produkt ist nicht verfügbar
MMBZ5242BQ-7-F MMBZ5242BQ-7-F DIODES INCORPORATED MMBZ5221B-MMBZ5259B.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1350+0.054 EUR
1500+ 0.048 EUR
2125+ 0.034 EUR
2250+ 0.032 EUR
Mindestbestellmenge: 1350
MMBZ5244BQ-7-F MMBZ5244BQ-7-F DIODES INCORPORATED Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 14V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Application: automotive industry
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: Zener
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 14V
auf Bestellung 4575 Stücke:
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1675+0.043 EUR
1875+ 0.039 EUR
2125+ 0.034 EUR
2475+ 0.029 EUR
2625+ 0.027 EUR
Mindestbestellmenge: 1675
MMSZ5221BQ-7-F MMSZ5221BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 8409 Stücke:
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1220+0.059 EUR
1480+ 0.049 EUR
2040+ 0.035 EUR
2140+ 0.033 EUR
Mindestbestellmenge: 1220
MMSZ5228BQ-7-F MMSZ5228BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Power dissipation: 0.37/0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.9V
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
1300+0.056 EUR
1560+ 0.046 EUR
1980+ 0.036 EUR
2080+ 0.034 EUR
Mindestbestellmenge: 1300
MMSZ5232BQ-7-F MMSZ5232BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
MMSZ5233BQ-7-F MMSZ5233BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 10165 Stücke:
Lieferzeit 14-21 Tag (e)
1790+0.04 EUR
2140+ 0.033 EUR
2415+ 0.03 EUR
2485+ 0.029 EUR
3000+ 0.028 EUR
Mindestbestellmenge: 1790
DMC67D8UFDBQ-7 DIODES INCORPORATED DMC67D8UFDBQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W
Power dissipation: 0.58W
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2020-6
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-20V
Drain current: 0.31/-2.3A
On-state resistance: 4.2Ω/123mΩ
Gate charge: 0.4pC/7.3nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMN3032LFDBQ-7 DIODES INCORPORATED DMN3032LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Produkt ist nicht verfügbar
DMP2160UFDBQ-7 DIODES INCORPORATED DMP2160UFDBQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMT3020LFDBQ-7 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Application: automotive industry
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 6.2A
Drain-source voltage: 30V
Kind of package: reel; tape
Case: U-DFN2020-6
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Produkt ist nicht verfügbar
DMT6002LPS-13 DIODES INCORPORATED DMT6002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 130.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6004LPS-13 DIODES INCORPORATED DMT6004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 78.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6004SCT DMT6004SCT DIODES INCORPORATED DMT6004SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Kind of package: tube
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
DMT6004SPS-13 DIODES INCORPORATED DMT6004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6005LFG-13 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6005LFG-7 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6005LPS-13 DIODES INCORPORATED DMT6005LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6006LK3-13 DIODES INCORPORATED DMT6006LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Mounting: SMD
Case: TO252
Produkt ist nicht verfügbar
DMT6006LSS-13 DMT6006LSS-13 DIODES INCORPORATED DMT6006LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
DMT6006SPS-13 DIODES INCORPORATED DMT6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 390A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6007LFG-13 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6007LFG-7 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 70A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PowerDI®3333-8
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
66+ 1.09 EUR
92+ 0.78 EUR
98+ 0.74 EUR
Mindestbestellmenge: 50
DMT6007LFGQ-13 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6007LFGQ-7 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6008LFG-13 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6008LFG-7 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
SMBJ30A-13-F SMBJ30A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3160 Stücke:
Lieferzeit 14-21 Tag (e)
310+0.23 EUR
540+ 0.13 EUR
605+ 0.12 EUR
695+ 0.1 EUR
740+ 0.097 EUR
Mindestbestellmenge: 310
AP1510SG-13 AP1510SG-13 DIODES INCORPORATED AP1510.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.6÷23VDC; Uout: -0.3÷23.3VDC; 3A
Input voltage: 3.6...23V DC
Output current: 3A
Efficiency: 91%
Mounting: SMD
Operating temperature: -25...85°C
Case: SO8
Output voltage: -0.3...23.3V DC
Type of integrated circuit: PMIC
Duty cycle factor: 0...100%
Kind of integrated circuit: DC/DC converter
Topology: buck
Frequency: 240...360kHz
Produkt ist nicht verfügbar
74AHCT04S14-13 DIODES INCORPORATED 74AHCT04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AHCT
Produkt ist nicht verfügbar
74AHCT04T14-13 DIODES INCORPORATED 74AHCT04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AHCT
Produkt ist nicht verfügbar
74AHCT08S14-13 DIODES INCORPORATED 74AHCT08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AHCT
Produkt ist nicht verfügbar
74AHCT08T14-13 DIODES INCORPORATED 74AHCT08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AHCT
Produkt ist nicht verfügbar
ZDT751TA DIODES INCORPORATED ZDT751.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 2.75W; SM8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
DMP1045U-7 DMP1045U-7 DIODES INCORPORATED DMP1045U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2635 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
560+ 0.13 EUR
625+ 0.11 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 325
AP2112K-1.2TRG1 AP2112K-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT23-5
Integrated circuit features: shutdown mode control input
Output voltage: 1.2V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112K-1.8TRG1 AP2112K-1.8TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT23-5; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT23-5
Integrated circuit features: shutdown mode control input
Output voltage: 1.8V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.7V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112K-2.5TRG1 AP2112K-2.5TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT23-5
Integrated circuit features: shutdown mode control input
Output voltage: 2.5V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112M-3.3TRG1 AP2112M-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SO8
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112R5-1.2TRG1 AP2112R5-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT89
Integrated circuit features: shutdown mode control input
Output voltage: 1.2V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112R5-3.3TRG1 AP2112R5-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT89
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112R5A-3.3TRG1 AP2112R5A-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT89
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
74LVC125AT14-13 74LVC125AT14-13 DIODES INCORPORATED 74LVC125A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LVC; 40uA
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: LVC
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
auf Bestellung 1055 Stücke:
Lieferzeit 14-21 Tag (e)
348+0.21 EUR
506+ 0.14 EUR
575+ 0.12 EUR
658+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 348
74LVC125AS14-13 DIODES INCORPORATED 74LVC125A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
SMBJ16A-13-F SMBJ16A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3005 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
205+ 0.35 EUR
264+ 0.27 EUR
400+ 0.18 EUR
642+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 152
SMAJ58A-13-F SMAJ58A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 7704 Stücke:
Lieferzeit 14-21 Tag (e)
375+0.19 EUR
635+ 0.11 EUR
705+ 0.1 EUR
850+ 0.084 EUR
895+ 0.08 EUR
Mindestbestellmenge: 375
SMAJ22A-13-F SMAJ22A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
630+0.11 EUR
710+ 0.1 EUR
820+ 0.088 EUR
870+ 0.083 EUR
Mindestbestellmenge: 630
BCX5410TA BCX54x-DTE.pdf
BCX5410TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
550+0.13 EUR
610+ 0.12 EUR
790+ 0.091 EUR
840+ 0.086 EUR
Mindestbestellmenge: 550
BCX5416TA BCX54x-DTE.pdf
BCX5416TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
320+0.23 EUR
Mindestbestellmenge: 320
FZT653TA FZT653.pdf
FZT653TA
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223
Case: SOT223
Mounting: SMD
Frequency: 175MHz
Kind of package: reel; tape
Power dissipation: 3W
Collector-emitter voltage: 120V
Collector current: 2A
Type of transistor: NPN
Polarisation: bipolar
auf Bestellung 1172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
160+ 0.45 EUR
188+ 0.38 EUR
218+ 0.33 EUR
228+ 0.31 EUR
Mindestbestellmenge: 67
DF1504S-T DF15005S-DF1510S.pdf
DF1504S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Case: DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Features of semiconductor devices: glass passivated
auf Bestellung 1506 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
198+0.36 EUR
222+ 0.32 EUR
286+ 0.25 EUR
304+ 0.24 EUR
Mindestbestellmenge: 198
DF04S-T DF005_10S.pdf
DF04S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
162+ 0.44 EUR
391+ 0.18 EUR
414+ 0.17 EUR
Mindestbestellmenge: 125
DF08S-T DF005_10S.pdf
DF08S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 1397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
201+ 0.36 EUR
248+ 0.29 EUR
262+ 0.27 EUR
Mindestbestellmenge: 179
DF1510S-T DF15005S-DF1510S.pdf
DF1510S-T
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A; DFS
Kind of package: reel; tape
Electrical mounting: SMT
Case: DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Features of semiconductor devices: glass passivated
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
164+ 0.43 EUR
Mindestbestellmenge: 76
DMN61D8L-7 DMN61D8L-LVT.pdf
DMN61D8L-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.37A; 0.39W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.37A
Power dissipation: 0.39W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
SBR12A45SP5-13 SBR12A45SP5.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 45V; 12A; PowerDI®5
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Capacitance: 1nF
Max. forward voltage: 0.6V
Case: PowerDI®5
Kind of package: reel; tape
Leakage current: 75mA
Max. forward impulse current: 280A
Produkt ist nicht verfügbar
GBJ1510-F GBJ15_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 240A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
DMG302PU-13 DMG302PU.pdf
DMG302PU-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Case: SOT23
Drain-source voltage: -25V
Drain current: -140mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 0.35nC
Produkt ist nicht verfügbar
DMG302PU-7 DMG302PU.pdf
DMG302PU-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.45W
Drain-source voltage: -25V
Drain current: -0.14A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 0.35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Produkt ist nicht verfügbar
BC847BQ-7-F ds11108.pdf
BC847BQ-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
DDZ5V6BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V6BQ-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Leakage current: 50nA
Application: automotive industry
Produkt ist nicht verfügbar
MMBZ5242BQ-7-F MMBZ5221B-MMBZ5259B.pdf
MMBZ5242BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1350+0.054 EUR
1500+ 0.048 EUR
2125+ 0.034 EUR
2250+ 0.032 EUR
Mindestbestellmenge: 1350
MMBZ5244BQ-7-F
MMBZ5244BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 14V; SMD; reel,tape; SOT23; single diode
Mounting: SMD
Application: automotive industry
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: Zener
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 14V
auf Bestellung 4575 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1675+0.043 EUR
1875+ 0.039 EUR
2125+ 0.034 EUR
2475+ 0.029 EUR
2625+ 0.027 EUR
Mindestbestellmenge: 1675
MMSZ5221BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5221BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 8409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1220+0.059 EUR
1480+ 0.049 EUR
2040+ 0.035 EUR
2140+ 0.033 EUR
Mindestbestellmenge: 1220
MMSZ5228BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5228BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Power dissipation: 0.37/0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.9V
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1300+0.056 EUR
1560+ 0.046 EUR
1980+ 0.036 EUR
2080+ 0.034 EUR
Mindestbestellmenge: 1300
MMSZ5232BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5232BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
MMSZ5233BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5233BQ-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 10165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1790+0.04 EUR
2140+ 0.033 EUR
2415+ 0.03 EUR
2485+ 0.029 EUR
3000+ 0.028 EUR
Mindestbestellmenge: 1790
DMC67D8UFDBQ-7 DMC67D8UFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-20V; 0.31/-2.3A; 0.58W
Power dissipation: 0.58W
Mounting: SMD
Kind of package: reel; tape
Case: U-DFN2020-6
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Type of transistor: N/P-MOSFET
Drain-source voltage: 60/-20V
Drain current: 0.31/-2.3A
On-state resistance: 4.2Ω/123mΩ
Gate charge: 0.4pC/7.3nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMN3032LFDBQ-7 DMN3032LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Mounting: SMD
Pulsed drain current: 25A
Power dissipation: 1.7W
Gate charge: 10.6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: U-DFN2020-6
On-state resistance: 42mΩ
Produkt ist nicht verfügbar
DMP2160UFDBQ-7 DMP2160UFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -13A
Power dissipation: 1.4W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMT3020LFDBQ-7 DMT3020LFDBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Application: automotive industry
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 6.2A
Drain-source voltage: 30V
Kind of package: reel; tape
Case: U-DFN2020-6
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Produkt ist nicht verfügbar
DMT6002LPS-13 DMT6002LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 130.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6004LPS-13 DMT6004LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 78.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6004SCT DMT6004SCT.pdf
DMT6004SCT
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Kind of package: tube
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
DMT6004SPS-13 DMT6004SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6005LFG-13 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6005LFG-7 DMT6005LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6005LPS-13 DMT6005LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6006LK3-13 DMT6006LK3.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Mounting: SMD
Case: TO252
Produkt ist nicht verfügbar
DMT6006LSS-13 DMT6006LSS.pdf
DMT6006LSS-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
DMT6006SPS-13 DMT6006SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 390A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMT6007LFG-13 DMT6007LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6007LFG-7 DMT6007LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 70A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PowerDI®3333-8
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
50+1.44 EUR
66+ 1.09 EUR
92+ 0.78 EUR
98+ 0.74 EUR
Mindestbestellmenge: 50
DMT6007LFGQ-13 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6007LFGQ-7 DMT6007LFGQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6008LFG-13 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT6008LFG-7 DMT6008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
SMBJ30A-13-F SMBJ_ser.pdf
SMBJ30A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.3÷38.3V; 12.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
310+0.23 EUR
540+ 0.13 EUR
605+ 0.12 EUR
695+ 0.1 EUR
740+ 0.097 EUR
Mindestbestellmenge: 310
AP1510SG-13 AP1510.pdf
AP1510SG-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.6÷23VDC; Uout: -0.3÷23.3VDC; 3A
Input voltage: 3.6...23V DC
Output current: 3A
Efficiency: 91%
Mounting: SMD
Operating temperature: -25...85°C
Case: SO8
Output voltage: -0.3...23.3V DC
Type of integrated circuit: PMIC
Duty cycle factor: 0...100%
Kind of integrated circuit: DC/DC converter
Topology: buck
Frequency: 240...360kHz
Produkt ist nicht verfügbar
74AHCT04S14-13 74AHCT04.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AHCT
Produkt ist nicht verfügbar
74AHCT04T14-13 74AHCT04.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AHCT
Produkt ist nicht verfügbar
74AHCT08S14-13 74AHCT08.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AHCT
Produkt ist nicht verfügbar
74AHCT08T14-13 74AHCT08.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AHCT
Produkt ist nicht verfügbar
ZDT751TA ZDT751.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 2.75W; SM8
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
DMP1045U-7 DMP1045U.pdf
DMP1045U-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 2635 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
560+ 0.13 EUR
625+ 0.11 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 325
AP2112K-1.2TRG1 AP2112.pdf
AP2112K-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT23-5
Integrated circuit features: shutdown mode control input
Output voltage: 1.2V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112K-1.8TRG1 AP2112.pdf
AP2112K-1.8TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT23-5; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT23-5
Integrated circuit features: shutdown mode control input
Output voltage: 1.8V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.7V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112K-2.5TRG1 AP2112.pdf
AP2112K-2.5TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT23-5
Integrated circuit features: shutdown mode control input
Output voltage: 2.5V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112M-3.3TRG1 AP2112.pdf
AP2112M-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SO8
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112R5-1.2TRG1 AP2112.pdf
AP2112R5-1.2TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT89
Integrated circuit features: shutdown mode control input
Output voltage: 1.2V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112R5-3.3TRG1 AP2112.pdf
AP2112R5-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT89
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
AP2112R5A-3.3TRG1 AP2112.pdf
AP2112R5A-3.3TRG1
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Number of channels: 1
Output current: 0.6A
Mounting: SMD
Input voltage: 2.5...6V
Case: SOT89
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Produkt ist nicht verfügbar
74LVC125AT14-13 74LVC125A.pdf
74LVC125AT14-13
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LVC; 40uA
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: LVC
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...125°C
Supply voltage: 1.65...5.5V DC
auf Bestellung 1055 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
348+0.21 EUR
506+ 0.14 EUR
575+ 0.12 EUR
658+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 348
74LVC125AS14-13 74LVC125A.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
SMBJ16A-13-F SMBJ_ser.pdf
SMBJ16A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.8÷20.5V; 23.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
205+ 0.35 EUR
264+ 0.27 EUR
400+ 0.18 EUR
642+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 152
SMAJ58A-13-F SMAJ_ser.pdf
SMAJ58A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 7704 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
375+0.19 EUR
635+ 0.11 EUR
705+ 0.1 EUR
850+ 0.084 EUR
895+ 0.08 EUR
Mindestbestellmenge: 375
SMAJ22A-13-F SMAJ_ser.pdf
SMAJ22A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
630+0.11 EUR
710+ 0.1 EUR
820+ 0.088 EUR
870+ 0.083 EUR
Mindestbestellmenge: 630
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