Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1198 nach 1259
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AP2127K-3.0TRG1 | DIODES INCORPORATED |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
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AP2127K-3.3TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2127K-4.2TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 4.2V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 4.2V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
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AP2127K-4.75TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 4.75V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 4.75V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
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AP2127K-ADJTRG1 | DIODES INCORPORATED |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.5V; 0.4A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 0.8...5.5V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
auf Bestellung 1675 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2127N-1.0TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.4A; SOT23; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1V Output current: 0.4A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 |
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AP2127N-1.2TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.4A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.2V Output current: 0.4A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 |
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AP2127N-1.8TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.4A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.8V Output current: 0.4A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 |
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AP2127N-2.5TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.4A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.5V Output current: 0.4A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 |
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AP2127N-2.8TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.4A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.8V Output current: 0.4A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 |
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AP2127N-3.0TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3V Output current: 0.4A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 |
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AP2127N-3.3TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 0.4A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 |
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SMBJ100A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 111÷128V; 3.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMBJ100CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMBJ10A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.1÷12.8V; 35.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ10CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.8V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 955 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ26CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1126 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1024UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563 Mounting: SMD Drain current: 0.89A Drain-source voltage: 20V Power dissipation: 0.53W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced On-state resistance: 0.45Ω Gate-source voltage: ±6V Type of transistor: N-MOSFET x2 Case: SOT563 |
auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1026UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.8Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.58W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A |
auf Bestellung 3723 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG1026UVQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60V Drain current: 0.32A On-state resistance: 2.1Ω Type of transistor: N-MOSFET Power dissipation: 0.65W Polarisation: unipolar Gate charge: 0.45pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A |
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SMCJ6.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 145.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMCJ6.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; bidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 145.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| B150AF-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA flat; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMA flat Mounting: SMD Leakage current: 7.5mA Kind of package: reel; tape Load current: 1A Capacitance: 45pF Max. forward voltage: 0.65V |
Produkt ist nicht verfügbar |
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| DMHT3006LFJ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W Kind of package: reel; tape Mounting: SMD Drain-source voltage: 30V Drain current: 10A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: V-DFN5045-12 |
Produkt ist nicht verfügbar |
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DMG301NU-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3023L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23 Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 0.6W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 |
auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3042L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 7235 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3051L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 20A; 850mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Pulsed drain current: 20A Power dissipation: 850mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3053L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23 Mounting: SMD Drain current: 3.5A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.48W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 30V |
auf Bestellung 2630 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3056L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Power dissipation: 1.38W Case: SOT23 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3415 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3097L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3.1A On-state resistance: 99mΩ Type of transistor: P-MOSFET Power dissipation: 1.52W Polarisation: unipolar Gate charge: 13.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: SOT23 |
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DMP3098L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.08W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.9A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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DMP3099L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.08W; SOT23 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 99mΩ Type of transistor: P-MOSFET Power dissipation: 1.08W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 |
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DMG2301U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -27A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.7A Pulsed drain current: -27A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced |
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DMG2307L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.76W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG301NU-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate |
auf Bestellung 5029 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2300U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.01A Pulsed drain current: 11A Power dissipation: 0.55W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 1.6nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3023L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Mounting: SMD Case: SOT23 |
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DMN3028LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Gate charge: 10.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 68mΩ Type of transistor: N-MOSFET |
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DMN3042L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 30A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 48mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3053L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 35A; 800mW; SOT23 Mounting: SMD Drain current: 3.5A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 35A Case: SOT23 Drain-source voltage: 30V |
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US1D-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1V Max. forward impulse current: 30A Leakage current: 0.1mA Kind of package: reel; tape |
auf Bestellung 2678 Stücke: Lieferzeit 14-21 Tag (e) |
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US1DWF-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 30ns; SOD123F; Ufmax: 0.9V; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 30ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.9V Max. forward impulse current: 30A Leakage current: 1µA Kind of package: reel; tape |
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FZT855TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 5A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 1383 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP2501SN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Mounting: SMD Active logical level: low Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Case: U-DFN2020-6 On-state resistance: 70mΩ Output current: 2.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel |
Produkt ist nicht verfügbar |
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| AP2502KTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; LED controller,DC/DC converter; Uin: 2÷6VDC; TSOT23-6 Mounting: SMD Operating temperature: -40...85°C Kind of integrated circuit: DC/DC converter; LED controller Frequency: 150kHz Type of integrated circuit: PMIC Input voltage: 2...6V DC Case: TSOT23-6 |
Produkt ist nicht verfügbar |
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| AP2511AMP-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Mounting: SMD Case: MSOP8EP Kind of package: reel; tape Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Output current: 2.5A On-state resistance: 70mΩ Type of integrated circuit: power switch Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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| AP2511ASN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Output current: 2.5A On-state resistance: 70mΩ Type of integrated circuit: power switch Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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| AP2511M8-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Mounting: SMD Case: MSOP8 Kind of package: reel; tape Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Output current: 2.5A On-state resistance: 70mΩ Type of integrated circuit: power switch Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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AP2511MP-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Number of channels: 1 Output current: 2.5A Mounting: SMD On-state resistance: 70mΩ Type of integrated circuit: power switch Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Case: MSOP8EP Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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AP2511S-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Mounting: SMD Case: SO8 Kind of package: reel; tape Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Output current: 2.5A On-state resistance: 70mΩ Type of integrated circuit: power switch Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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| AP2511SN-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of integrated circuit: high-side; USB switch Output current: 2.5A On-state resistance: 70mΩ Type of integrated circuit: power switch Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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| AP2552AFDC-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2020-6 Type C On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
auf Bestellung 2997 Stücke: Lieferzeit 14-21 Tag (e) |
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AP2552AW6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
auf Bestellung 2310 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP2552FDC-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: U-DFN2020-6 Type C On-state resistance: 80mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: low |
Produkt ist nicht verfügbar |
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| AP2553AFDC-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD On-state resistance: 80mΩ Output current: 2.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: U-DFN2020-6 Type C Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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AP2553AW6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
auf Bestellung 1163 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP2553FDC-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD On-state resistance: 80mΩ Output current: 2.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: U-DFN2020-6 Type C Supply voltage: 2.7...5.5V DC |
Produkt ist nicht verfügbar |
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AP2553W6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
auf Bestellung 1749 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMBJ36CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 40÷46V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...46V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
| AP2127K-3.0TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP2127K-3.3TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 235+ | 0.3 EUR |
| AP2127K-4.2TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.2V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 4.2V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.2V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 4.2V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP2127K-4.75TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.75V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 4.75V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 4.75V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 4.75V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP2127K-ADJTRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.5V; 0.4A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 0.8...5.5V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.5V; 0.4A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 0.8...5.5V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 300+ | 0.24 EUR |
| 635+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 825+ | 0.087 EUR |
| 875+ | 0.082 EUR |
| AP2127N-1.0TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.4A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.4A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Produkt ist nicht verfügbar
| AP2127N-1.2TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Produkt ist nicht verfügbar
| AP2127N-1.8TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.8V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.8V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Produkt ist nicht verfügbar
| AP2127N-2.5TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Produkt ist nicht verfügbar
| AP2127N-2.8TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Produkt ist nicht verfügbar
| AP2127N-3.0TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.4A; SOT23; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Produkt ist nicht verfügbar
| AP2127N-3.3TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.4A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Produkt ist nicht verfügbar
| SMBJ100A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMBJ100CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMBJ10A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.1÷12.8V; 35.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.1÷12.8V; 35.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 196+ | 0.37 EUR |
| 252+ | 0.28 EUR |
| 340+ | 0.21 EUR |
| SMBJ10CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.1÷12.8V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.8V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 270+ | 0.27 EUR |
| 445+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 600+ | 0.12 EUR |
| SMBJ26CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1126 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 272+ | 0.26 EUR |
| 486+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| 582+ | 0.12 EUR |
| DMG1024UV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563
Mounting: SMD
Drain current: 0.89A
Drain-source voltage: 20V
Power dissipation: 0.53W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
On-state resistance: 0.45Ω
Gate-source voltage: ±6V
Type of transistor: N-MOSFET x2
Case: SOT563
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563
Mounting: SMD
Drain current: 0.89A
Drain-source voltage: 20V
Power dissipation: 0.53W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
On-state resistance: 0.45Ω
Gate-source voltage: ±6V
Type of transistor: N-MOSFET x2
Case: SOT563
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.19 EUR |
| 410+ | 0.17 EUR |
| 510+ | 0.14 EUR |
| 540+ | 0.13 EUR |
| DMG1026UV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.58W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.58W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
auf Bestellung 3723 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 430+ | 0.17 EUR |
| 485+ | 0.15 EUR |
| 560+ | 0.13 EUR |
| 595+ | 0.12 EUR |
| DMG1026UVQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 2.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.65W
Polarisation: unipolar
Gate charge: 0.45pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 60V
Drain current: 0.32A
On-state resistance: 2.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.65W
Polarisation: unipolar
Gate charge: 0.45pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Produkt ist nicht verfügbar
| SMCJ6.0A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMCJ6.0CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 6.67÷7.37V; 145.6A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 145.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| B150AF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA flat; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 7.5mA
Kind of package: reel; tape
Load current: 1A
Capacitance: 45pF
Max. forward voltage: 0.65V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA flat; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMA flat
Mounting: SMD
Leakage current: 7.5mA
Kind of package: reel; tape
Load current: 1A
Capacitance: 45pF
Max. forward voltage: 0.65V
Produkt ist nicht verfügbar
| DMHT3006LFJ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: V-DFN5045-12
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: V-DFN5045-12
Produkt ist nicht verfügbar
| DMG301NU-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 475+ | 0.15 EUR |
| 535+ | 0.13 EUR |
| 620+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| DMN3023L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 330+ | 0.22 EUR |
| 400+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 535+ | 0.13 EUR |
| DMN3042L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 7235 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 525+ | 0.14 EUR |
| 590+ | 0.12 EUR |
| 715+ | 0.1 EUR |
| 755+ | 0.095 EUR |
| DMN3051L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 20A; 850mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 20A
Power dissipation: 850mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 20A; 850mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 20A
Power dissipation: 850mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3053L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23
Mounting: SMD
Drain current: 3.5A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.48W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23
Mounting: SMD
Drain current: 3.5A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.48W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 30V
auf Bestellung 2630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 345+ | 0.21 EUR |
| 380+ | 0.19 EUR |
| 430+ | 0.17 EUR |
| 485+ | 0.15 EUR |
| 515+ | 0.14 EUR |
| DMP3056L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 300+ | 0.24 EUR |
| 415+ | 0.17 EUR |
| 470+ | 0.15 EUR |
| 545+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| DMP3097L-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 99mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.52W
Polarisation: unipolar
Gate charge: 13.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -20A; 1.52W; SOT23
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3.1A
On-state resistance: 99mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.52W
Polarisation: unipolar
Gate charge: 13.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
| DMP3098L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.9A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.9A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP3099L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.08W; SOT23
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 99mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.08W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.08W; SOT23
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 99mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.08W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
| DMG2301U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -27A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -27A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; Idm: -27A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -27A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMG2307L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 270+ | 0.27 EUR |
| DMG301NU-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
auf Bestellung 5029 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 410+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 465+ | 0.15 EUR |
| 2500+ | 0.14 EUR |
| DMN2300U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3023L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
| DMN3028LQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DMN3042L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN3053L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 35A; 800mW; SOT23
Mounting: SMD
Drain current: 3.5A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SOT23
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 35A; 800mW; SOT23
Mounting: SMD
Drain current: 3.5A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SOT23
Drain-source voltage: 30V
Produkt ist nicht verfügbar
| US1D-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
auf Bestellung 2678 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 570+ | 0.13 EUR |
| 630+ | 0.11 EUR |
| 830+ | 0.087 EUR |
| 870+ | 0.082 EUR |
| US1DWF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 30ns; SOD123F; Ufmax: 0.9V; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Leakage current: 1µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 30ns; SOD123F; Ufmax: 0.9V; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FZT855TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1383 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 77+ | 0.94 EUR |
| 103+ | 0.7 EUR |
| 109+ | 0.66 EUR |
| 500+ | 0.63 EUR |
| AP2501SN-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: U-DFN2020-6
On-state resistance: 70mΩ
Output current: 2.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: U-DFN2020-6
On-state resistance: 70mΩ
Output current: 2.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Produkt ist nicht verfügbar
| AP2502KTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; LED controller,DC/DC converter; Uin: 2÷6VDC; TSOT23-6
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC converter; LED controller
Frequency: 150kHz
Type of integrated circuit: PMIC
Input voltage: 2...6V DC
Case: TSOT23-6
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; LED controller,DC/DC converter; Uin: 2÷6VDC; TSOT23-6
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: DC/DC converter; LED controller
Frequency: 150kHz
Type of integrated circuit: PMIC
Input voltage: 2...6V DC
Case: TSOT23-6
Produkt ist nicht verfügbar
| AP2511AMP-13 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: MSOP8EP
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: MSOP8EP
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
| AP2511ASN-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
| AP2511M8-13 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
| AP2511MP-13 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Number of channels: 1
Output current: 2.5A
Mounting: SMD
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Number of channels: 1
Output current: 2.5A
Mounting: SMD
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
| AP2511S-13 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
| AP2511SN-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
| AP2552AFDC-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 191+ | 0.38 EUR |
| 250+ | 0.29 EUR |
| 350+ | 0.2 EUR |
| 368+ | 0.19 EUR |
| AP2552AW6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
auf Bestellung 2310 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 146+ | 0.49 EUR |
| 241+ | 0.3 EUR |
| 290+ | 0.25 EUR |
| 307+ | 0.23 EUR |
| AP2552FDC-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
Produkt ist nicht verfügbar
| AP2553AFDC-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
On-state resistance: 80mΩ
Output current: 2.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN2020-6 Type C
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
On-state resistance: 80mΩ
Output current: 2.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN2020-6 Type C
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
| AP2553AW6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 177+ | 0.4 EUR |
| 291+ | 0.25 EUR |
| 357+ | 0.2 EUR |
| 378+ | 0.19 EUR |
| AP2553FDC-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
On-state resistance: 80mΩ
Output current: 2.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN2020-6 Type C
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
On-state resistance: 80mΩ
Output current: 2.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: U-DFN2020-6 Type C
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
| AP2553W6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
auf Bestellung 1749 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 295+ | 0.24 EUR |
| 353+ | 0.2 EUR |
| 373+ | 0.19 EUR |
| SMBJ36CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 40÷46V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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