Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1195 nach 1259
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DMC3021LK4-13 | DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6.8/-9.4A Power dissipation: 2.75W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 0.021/0.039Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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DMC3021LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 7/-8.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.021/0.039Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2292 Stücke: Lieferzeit 14-21 Tag (e) |
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ADA114YUQ-13 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ Mounting: SMD Application: automotive industry Power dissipation: 0.27W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SOT363 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 |
Produkt ist nicht verfügbar |
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DDA114YU-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT363; R1: 10kΩ Mounting: SMD Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SOT363 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 0.1A Type of transistor: PNP |
Produkt ist nicht verfügbar |
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| 74LVCH2T45HK3-7 | DIODES INCORPORATED |
Category: Level translators Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: 2bit; transceiver; translator Technology: CMOS Mounting: SMD Case: X2-DFN1410-8 Supply voltage: 1.2...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVCH |
Produkt ist nicht verfügbar |
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| 74LVCH2T45RA3-7 | DIODES INCORPORATED |
Category: Level translators Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: 2bit; transceiver; translator Technology: CMOS Mounting: SMD Case: X2-DFN1210-8 Supply voltage: 1.2...5.5V DC Operating temperature: -40...150°C Kind of output: 3-state Kind of package: reel; tape Family: LVCH |
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SD101AW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 60V; 15mA; 1ns; SOD123; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 60V Load current: 15mA Reverse recovery time: 1ns Semiconductor structure: single diode Capacitance: 2pF Max. forward voltage: 1V Case: SOD123 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.4W |
Produkt ist nicht verfügbar |
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SD101AWS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 60V; 15mA; 1ns; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 60V Load current: 15mA Reverse recovery time: 1ns Semiconductor structure: single diode Capacitance: 2pF Max. forward voltage: 1V Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 50mA Power dissipation: 0.2W |
auf Bestellung 1620 Stücke: Lieferzeit 14-21 Tag (e) |
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SD101BW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 50V; 15mA; 1ns; SOD123; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 50V Load current: 15mA Reverse recovery time: 1ns Semiconductor structure: single diode Capacitance: 2.1pF Max. forward voltage: 0.95V Case: SOD123 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.4W |
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SD101BWS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 50V; 15mA; 1ns; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 50V Load current: 15mA Reverse recovery time: 1ns Semiconductor structure: single diode Capacitance: 2.1pF Max. forward voltage: 0.95V Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 50mA Power dissipation: 0.2W |
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SD101CW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 15mA; 1ns; SOD123; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 15mA Reverse recovery time: 1ns Semiconductor structure: single diode Capacitance: 2.2pF Max. forward voltage: 0.9V Case: SOD123 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.4W |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SD101CWS-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 15mA; 1ns; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 15mA Reverse recovery time: 1ns Semiconductor structure: single diode Capacitance: 2.2pF Max. forward voltage: 0.9V Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.2W |
auf Bestellung 2974 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ6.5A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70mA Power dissipation: 0.61W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 160Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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BSS127SSN-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40mA Pulsed drain current: 0.16A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±20V On-state resistance: 190Ω Mounting: SMD Gate charge: 1.08nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| D15V0HA1U2LP-7B | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 460W; 16÷19.5V; 20A; unidirectional; X1-DFN1006-2; Ch: 1 Mounting: SMD Number of channels: 1 Case: X1-DFN1006-2 Max. off-state voltage: 15V Kind of package: reel; tape Semiconductor structure: unidirectional Max. forward impulse current: 20A Breakdown voltage: 16...19.5V Leakage current: 0.1µA Type of diode: TVS Peak pulse power dissipation: 460W |
Produkt ist nicht verfügbar |
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SMBJ58A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.6V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 755 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ26A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...33.2V Max. forward impulse current: 14.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2040 Stücke: Lieferzeit 14-21 Tag (e) |
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ADTC114ECAQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SOT23 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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DDTC114ECA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 50mA Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 3430 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP7341-18FS4-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; X2DFN4; SMD Type of integrated circuit: voltage regulator Case: X2DFN4 Output current: 0.3A Output voltage: 1.8V Number of channels: 1 Integrated circuit features: shutdown mode control input Mounting: SMD Operating temperature: -40...85°C Input voltage: 1.7...5.25V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7341 Tolerance: ±1.5% Voltage drop: 0.42V |
Produkt ist nicht verfügbar |
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SMAJ26CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ26CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
Produkt ist nicht verfügbar |
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B0520LW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape Max. forward impulse current: 5.5A Semiconductor structure: single diode Load current: 0.5A Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 170pF Case: SOD123 Max. off-state voltage: 20V Power dissipation: 0.41W Mounting: SMD |
auf Bestellung 3830 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT125S14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
auf Bestellung 1865 Stücke: Lieferzeit 14-21 Tag (e) |
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KBJ610G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 170A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 6A Max. forward impulse current: 170A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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TL431ASA-7 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.495...36V |
auf Bestellung 1890 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ28A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| PAM8902HKER | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC Type of integrated circuit: audio amplifier Case: QFN16 Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.5...5.5V DC Amplifier class: D |
Produkt ist nicht verfügbar |
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| PAM8904EGPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: WQFN12 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.5...5.5V DC |
Produkt ist nicht verfügbar |
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| PAM8904EJER | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN16 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.5...5.5V DC |
Produkt ist nicht verfügbar |
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| PAM8904EJPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; UQFN12; 1.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN12 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.5...5.5V DC |
Produkt ist nicht verfügbar |
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| PAM8904JER | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; UQFN16; 2.3÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN16 Mounting: SMD Kind of package: reel; tape Voltage supply range: 2.3...5.5V DC |
Produkt ist nicht verfügbar |
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| PAM8904JPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; UQFN12; 1.8÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN12 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
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| PAM8904QJER | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; UQFN16; 2.3÷5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN16 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 2.3...5V DC |
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| PAM8907SB10-7 | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: driver; piezo sounder; UQFN10; 1.8÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Mounting: SMD Case: UQFN10 Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
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| PAM8908JER | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2 Type of integrated circuit: audio amplifier Mounting: SMD Case: UQFN16 Integrated circuit features: headphone driver; stereo Operating temperature: -40...125°C Number of channels: 2 Kind of package: reel; tape Voltage supply range: 2.5...5.5V DC Amplifier class: AB Output power: 25mW |
Produkt ist nicht verfügbar |
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BAV170-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape |
auf Bestellung 6825 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV170Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 125mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.125A Max. load current: 0.5A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 7375 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV170T-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT523; Ufmax: 1.1V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT523 Max. forward voltage: 1.1V Kind of package: reel; tape |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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AS358GTR-G1 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3÷36V; Ch: 2; TSSOP8; reel,tape Type of integrated circuit: operational amplifier Open-loop gain: 100dB Mounting: SMT Number of channels: 2 Case: TSSOP8 Operating temperature: -40...85°C Input offset voltage: 2mV Kind of package: reel; tape Power dissipation: 0.5W Operating voltage: 3...36V |
auf Bestellung 537 Stücke: Lieferzeit 14-21 Tag (e) |
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AS358MTR-G1 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3÷36V; Ch: 2; SO8; reel,tape Type of integrated circuit: operational amplifier Open-loop gain: 100dB Mounting: SMT Number of channels: 2 Case: SO8 Operating temperature: -40...85°C Input offset voltage: 2mV Kind of package: reel; tape Power dissipation: 0.55W Operating voltage: 3...36V |
auf Bestellung 3729 Stücke: Lieferzeit 14-21 Tag (e) |
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AS358P-E1 | DIODES INCORPORATED |
Category: THT operational amplifiers Description: IC: operational amplifier; 3÷36V; Ch: 2; DIP8; tube Type of integrated circuit: operational amplifier Open-loop gain: 100dB Mounting: THT Number of channels: 2 Case: DIP8 Operating temperature: -40...85°C Input offset voltage: 7mV Kind of package: tube Power dissipation: 0.83W Operating voltage: 3...36V |
auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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HD06-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 30A Electrical mounting: SMT Case: MiniDIP Kind of package: reel; tape |
auf Bestellung 1121 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ60A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 3245 Stücke: Lieferzeit 14-21 Tag (e) |
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AP63300WU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; 96% Input voltage: 3.8...32V DC Output current: 3A Efficiency: 96% Mounting: SMD Operating temperature: -40...85°C Case: TSOT26 Output voltage: 0.8...31V DC Type of integrated circuit: PMIC Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Frequency: 0.5MHz |
auf Bestellung 1691 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP61300Z6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A Type of integrated circuit: PMIC Frequency: 2.2MHz Case: SOT563 Mounting: SMD Operating temperature: -40...85°C Output voltage: 0.6...5.5V DC Output current: 3A Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck |
Produkt ist nicht verfügbar |
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AP63300QWU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷32VDC; 3A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 0.8...32V DC Output current: 3A Case: TSOT26 Mounting: SMD Frequency: 450...550kHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| ZXRE160FT4-7 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: SMD Case: DFN1520-6 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 15mA Operating voltage: 0.2...18V |
Produkt ist nicht verfügbar |
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| DMN2005UFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 40A; Idm: 130A; 1.05W Type of transistor: N-MOSFET Case: PowerDI®3333-8 Mounting: SMD Power dissipation: 1.05W Kind of package: reel; tape Pulsed drain current: 130A On-state resistance: 8.7mΩ Drain-source voltage: 20V Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain current: 40A |
Produkt ist nicht verfügbar |
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| DMN2005UFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: 20V Drain current: 14A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 2.27W Kind of package: reel; tape Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 130A Mounting: SMD |
Produkt ist nicht verfügbar |
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| DMN2005UFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Type of transistor: N-MOSFET Case: PowerDI3333-8 Application: automotive industry Mounting: SMD Power dissipation: 2.27W Kind of package: reel; tape Pulsed drain current: 130A On-state resistance: 8.7mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±12V Drain current: 14A |
Produkt ist nicht verfügbar |
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| DMP2004UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -95A Pulsed drain current: -180A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 7mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP2004UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -95A Pulsed drain current: -180A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 7mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP2005UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -100A |
Produkt ist nicht verfügbar |
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| DMP2005UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Kind of package: reel; tape Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -100A Mounting: SMD |
Produkt ist nicht verfügbar |
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| DMP2006UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Case: PowerDI®3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A |
Produkt ist nicht verfügbar |
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| DMP2006UFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Kind of package: reel; tape Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Mounting: SMD |
Produkt ist nicht verfügbar |
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| DMP2006UFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Kind of package: reel; tape Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Mounting: SMD |
Produkt ist nicht verfügbar |
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| DMP2007UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -80A |
Produkt ist nicht verfügbar |
| DMC3021LK4-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.8/-9.4A
Power dissipation: 2.75W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.8/-9.4A
Power dissipation: 2.75W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMC3021LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2292 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 0.6 EUR |
| 169+ | 0.42 EUR |
| 269+ | 0.27 EUR |
| 285+ | 0.25 EUR |
| 1000+ | 0.24 EUR |
| ADA114YUQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Mounting: SMD
Application: automotive industry
Power dissipation: 0.27W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Produkt ist nicht verfügbar
| DDA114YU-7-F |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT363; R1: 10kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT363; R1: 10kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: PNP
Produkt ist nicht verfügbar
| 74LVCH2T45HK3-7 |
|
Hersteller: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-8
Supply voltage: 1.2...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVCH
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-8
Supply voltage: 1.2...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVCH
Produkt ist nicht verfügbar
| 74LVCH2T45RA3-7 |
|
Hersteller: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Mounting: SMD
Case: X2-DFN1210-8
Supply voltage: 1.2...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVCH
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Mounting: SMD
Case: X2-DFN1210-8
Supply voltage: 1.2...5.5V DC
Operating temperature: -40...150°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVCH
Produkt ist nicht verfügbar
| SD101AW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 60V; 15mA; 1ns; SOD123; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 60V; 15mA; 1ns; SOD123; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.4W
Produkt ist nicht verfügbar
| SD101AWS-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 60V; 15mA; 1ns; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 50mA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 60V; 15mA; 1ns; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 50mA
Power dissipation: 0.2W
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1200+ | 0.06 EUR |
| 1340+ | 0.054 EUR |
| 1580+ | 0.045 EUR |
| 1620+ | 0.044 EUR |
| SD101BW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 50V; 15mA; 1ns; SOD123; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2.1pF
Max. forward voltage: 0.95V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 50V; 15mA; 1ns; SOD123; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2.1pF
Max. forward voltage: 0.95V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.4W
Produkt ist nicht verfügbar
| SD101BWS-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 50V; 15mA; 1ns; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2.1pF
Max. forward voltage: 0.95V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 50mA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 50V; 15mA; 1ns; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2.1pF
Max. forward voltage: 0.95V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 50mA
Power dissipation: 0.2W
Produkt ist nicht verfügbar
| SD101CW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 15mA; 1ns; SOD123; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 0.9V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 15mA; 1ns; SOD123; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 0.9V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.4W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 720+ | 0.1 EUR |
| 800+ | 0.09 EUR |
| 960+ | 0.075 EUR |
| 1020+ | 0.071 EUR |
| SD101CWS-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 15mA; 1ns; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 15mA; 1ns; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 15mA
Reverse recovery time: 1ns
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 0.9V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.2W
auf Bestellung 2974 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.19 EUR |
| 550+ | 0.13 EUR |
| 620+ | 0.12 EUR |
| 670+ | 0.11 EUR |
| 710+ | 0.1 EUR |
| SMAJ6.5A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 7.22÷7.98V; 35.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 320+ | 0.23 EUR |
| 660+ | 0.11 EUR |
| 735+ | 0.098 EUR |
| 955+ | 0.075 EUR |
| 1010+ | 0.071 EUR |
| BSS127S-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70mA
Power dissipation: 0.61W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 160Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70mA
Power dissipation: 0.61W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 160Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSS127SSN-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40mA
Pulsed drain current: 0.16A
Power dissipation: 0.61W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 190Ω
Mounting: SMD
Gate charge: 1.08nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40mA
Pulsed drain current: 0.16A
Power dissipation: 0.61W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 190Ω
Mounting: SMD
Gate charge: 1.08nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| D15V0HA1U2LP-7B |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 460W; 16÷19.5V; 20A; unidirectional; X1-DFN1006-2; Ch: 1
Mounting: SMD
Number of channels: 1
Case: X1-DFN1006-2
Max. off-state voltage: 15V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Breakdown voltage: 16...19.5V
Leakage current: 0.1µA
Type of diode: TVS
Peak pulse power dissipation: 460W
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 460W; 16÷19.5V; 20A; unidirectional; X1-DFN1006-2; Ch: 1
Mounting: SMD
Number of channels: 1
Case: X1-DFN1006-2
Max. off-state voltage: 15V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Breakdown voltage: 16...19.5V
Leakage current: 0.1µA
Type of diode: TVS
Peak pulse power dissipation: 460W
Produkt ist nicht verfügbar
| SMBJ58A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 280+ | 0.26 EUR |
| 465+ | 0.15 EUR |
| 530+ | 0.14 EUR |
| 605+ | 0.12 EUR |
| 645+ | 0.11 EUR |
| SMBJ26A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 28.9÷33.2V; 14.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...33.2V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2040 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 262+ | 0.27 EUR |
| 343+ | 0.21 EUR |
| 550+ | 0.13 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| 1000+ | 0.09 EUR |
| ADTC114ECAQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DDTC114ECA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 3430 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1475+ | 0.049 EUR |
| 2325+ | 0.031 EUR |
| 2650+ | 0.027 EUR |
| 3025+ | 0.024 EUR |
| 3200+ | 0.022 EUR |
| AP7341-18FS4-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; X2DFN4; SMD
Type of integrated circuit: voltage regulator
Case: X2DFN4
Output current: 0.3A
Output voltage: 1.8V
Number of channels: 1
Integrated circuit features: shutdown mode control input
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.7...5.25V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7341
Tolerance: ±1.5%
Voltage drop: 0.42V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; X2DFN4; SMD
Type of integrated circuit: voltage regulator
Case: X2DFN4
Output current: 0.3A
Output voltage: 1.8V
Number of channels: 1
Integrated circuit features: shutdown mode control input
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.7...5.25V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7341
Tolerance: ±1.5%
Voltage drop: 0.42V
Produkt ist nicht verfügbar
| SMAJ26CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)| SMAJ26CAQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
| B0520LW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape
Max. forward impulse current: 5.5A
Semiconductor structure: single diode
Load current: 0.5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 170pF
Case: SOD123
Max. off-state voltage: 20V
Power dissipation: 0.41W
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape
Max. forward impulse current: 5.5A
Semiconductor structure: single diode
Load current: 0.5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 170pF
Case: SOD123
Max. off-state voltage: 20V
Power dissipation: 0.41W
Mounting: SMD
auf Bestellung 3830 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 700+ | 0.1 EUR |
| 1330+ | 0.054 EUR |
| 1500+ | 0.048 EUR |
| 1740+ | 0.041 EUR |
| 1840+ | 0.039 EUR |
| 74HCT125S14-13 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 1865 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 317+ | 0.23 EUR |
| 463+ | 0.15 EUR |
| 527+ | 0.14 EUR |
| 625+ | 0.11 EUR |
| KBJ610G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 170A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 170A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| TL431ASA-7 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
auf Bestellung 1890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 645+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 885+ | 0.081 EUR |
| 935+ | 0.077 EUR |
| SMCJ28A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| PAM8902HKER |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Type of integrated circuit: audio amplifier
Case: QFN16
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Type of integrated circuit: audio amplifier
Case: QFN16
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Produkt ist nicht verfügbar
| PAM8904EGPR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: WQFN12
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: WQFN12
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Produkt ist nicht verfügbar
| PAM8904EJER |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Produkt ist nicht verfügbar
| PAM8904EJPR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN12
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN12
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Produkt ist nicht verfügbar
| PAM8904JER |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 2.3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Mounting: SMD
Kind of package: reel; tape
Voltage supply range: 2.3...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 2.3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Mounting: SMD
Kind of package: reel; tape
Voltage supply range: 2.3...5.5V DC
Produkt ist nicht verfügbar
| PAM8904JPR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; 1.8÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN12
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.8...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; 1.8÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN12
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.8...5.5V DC
Produkt ist nicht verfügbar
| PAM8904QJER |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 2.3÷5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 2.3...5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 2.3÷5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 2.3...5V DC
Produkt ist nicht verfügbar
| PAM8907SB10-7 |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; 1.8÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: UQFN10
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.8...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; 1.8÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Mounting: SMD
Case: UQFN10
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.8...5.5V DC
Produkt ist nicht verfügbar
| PAM8908JER |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: UQFN16
Integrated circuit features: headphone driver; stereo
Operating temperature: -40...125°C
Number of channels: 2
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Amplifier class: AB
Output power: 25mW
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 25mW; headphone driver,stereo; Ch: 2
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: UQFN16
Integrated circuit features: headphone driver; stereo
Operating temperature: -40...125°C
Number of channels: 2
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Amplifier class: AB
Output power: 25mW
Produkt ist nicht verfügbar
| BAV170-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
auf Bestellung 6825 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1300+ | 0.056 EUR |
| 1775+ | 0.041 EUR |
| 2000+ | 0.036 EUR |
| 2450+ | 0.029 EUR |
| 2575+ | 0.028 EUR |
| BAV170Q-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 125mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Max. load current: 0.5A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 125mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Max. load current: 0.5A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 7375 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.048 EUR |
| 1675+ | 0.043 EUR |
| 2125+ | 0.034 EUR |
| 2225+ | 0.032 EUR |
| BAV170T-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 720+ | 0.1 EUR |
| 950+ | 0.076 EUR |
| 1070+ | 0.067 EUR |
| 1240+ | 0.058 EUR |
| 1310+ | 0.055 EUR |
| AS358GTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3÷36V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Open-loop gain: 100dB
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.5W
Operating voltage: 3...36V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3÷36V; Ch: 2; TSSOP8; reel,tape
Type of integrated circuit: operational amplifier
Open-loop gain: 100dB
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.5W
Operating voltage: 3...36V
auf Bestellung 537 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| AS358MTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3÷36V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Open-loop gain: 100dB
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
Operating voltage: 3...36V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3÷36V; Ch: 2; SO8; reel,tape
Type of integrated circuit: operational amplifier
Open-loop gain: 100dB
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.55W
Operating voltage: 3...36V
auf Bestellung 3729 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 570+ | 0.13 EUR |
| 1195+ | 0.06 EUR |
| 1355+ | 0.053 EUR |
| 1565+ | 0.046 EUR |
| 1615+ | 0.044 EUR |
| AS358P-E1 |
|
Hersteller: DIODES INCORPORATED
Category: THT operational amplifiers
Description: IC: operational amplifier; 3÷36V; Ch: 2; DIP8; tube
Type of integrated circuit: operational amplifier
Open-loop gain: 100dB
Mounting: THT
Number of channels: 2
Case: DIP8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: tube
Power dissipation: 0.83W
Operating voltage: 3...36V
Category: THT operational amplifiers
Description: IC: operational amplifier; 3÷36V; Ch: 2; DIP8; tube
Type of integrated circuit: operational amplifier
Open-loop gain: 100dB
Mounting: THT
Number of channels: 2
Case: DIP8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: tube
Power dissipation: 0.83W
Operating voltage: 3...36V
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 400+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 520+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| HD06-T |
Hersteller: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 30A; MiniDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Electrical mounting: SMT
Case: MiniDIP
Kind of package: reel; tape
auf Bestellung 1121 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 0.53 EUR |
| 180+ | 0.4 EUR |
| 275+ | 0.26 EUR |
| 477+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| SMAJ60A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 66.7÷73.7V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3245 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 640+ | 0.11 EUR |
| 710+ | 0.1 EUR |
| 925+ | 0.078 EUR |
| 975+ | 0.074 EUR |
| AP63300WU-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; 96%
Input voltage: 3.8...32V DC
Output current: 3A
Efficiency: 96%
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOT26
Output voltage: 0.8...31V DC
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Frequency: 0.5MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; 96%
Input voltage: 3.8...32V DC
Output current: 3A
Efficiency: 96%
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOT26
Output voltage: 0.8...31V DC
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Frequency: 0.5MHz
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 86+ | 0.84 EUR |
| 96+ | 0.75 EUR |
| 109+ | 0.66 EUR |
| 117+ | 0.61 EUR |
| AP61300Z6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Frequency: 2.2MHz
Case: SOT563
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 3A
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A
Type of integrated circuit: PMIC
Frequency: 2.2MHz
Case: SOT563
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 0.6...5.5V DC
Output current: 3A
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Produkt ist nicht verfügbar
| AP63300QWU-7 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷32VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...32V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 450...550kHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷32VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...32V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 450...550kHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| ZXRE160FT4-7 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Operating voltage: 0.2...18V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 15mA
Operating voltage: 0.2...18V
Produkt ist nicht verfügbar
| DMN2005UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; Idm: 130A; 1.05W
Type of transistor: N-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Power dissipation: 1.05W
Kind of package: reel; tape
Pulsed drain current: 130A
On-state resistance: 8.7mΩ
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; Idm: 130A; 1.05W
Type of transistor: N-MOSFET
Case: PowerDI®3333-8
Mounting: SMD
Power dissipation: 1.05W
Kind of package: reel; tape
Pulsed drain current: 130A
On-state resistance: 8.7mΩ
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain current: 40A
Produkt ist nicht verfügbar
| DMN2005UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 14A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.27W
Kind of package: reel; tape
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 130A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 14A
On-state resistance: 8.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.27W
Kind of package: reel; tape
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 130A
Mounting: SMD
Produkt ist nicht verfügbar
| DMN2005UFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Application: automotive industry
Mounting: SMD
Power dissipation: 2.27W
Kind of package: reel; tape
Pulsed drain current: 130A
On-state resistance: 8.7mΩ
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Application: automotive industry
Mounting: SMD
Power dissipation: 2.27W
Kind of package: reel; tape
Pulsed drain current: 130A
On-state resistance: 8.7mΩ
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 164nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain current: 14A
Produkt ist nicht verfügbar
| DMP2004UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP2004UFG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP2005UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Produkt ist nicht verfügbar
| DMP2005UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Kind of package: reel; tape
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Mounting: SMD
Produkt ist nicht verfügbar
| DMP2006UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Produkt ist nicht verfügbar
| DMP2006UFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Produkt ist nicht verfügbar
| DMP2006UFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Kind of package: reel; tape
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Produkt ist nicht verfügbar
| DMP2007UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Produkt ist nicht verfügbar