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74LVCE1G32W5-7 74LVCE1G32W5-7 DIODES INCORPORATED 74LVCE1G32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
AP2280-2WG-7 AP2280-2WG-7 DIODES INCORPORATED AP2280.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 1.5...6V DC
On-state resistance: 80mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT25
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
193+ 0.37 EUR
251+ 0.29 EUR
266+ 0.27 EUR
Mindestbestellmenge: 173
74LVC1G02W5-7 74LVC1G02W5-7 DIODES INCORPORATED 74LVC1G02.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74AHCT1G02W5-7 74AHCT1G02W5-7 DIODES INCORPORATED 74AHCT1G02.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Produkt ist nicht verfügbar
PAM8012AZN DIODES INCORPORATED PAM8012.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9
Type of integrated circuit: audio amplifier
Frequency: 250Hz
Output power: 2W
Integrated circuit features: low distortion THD; low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: WCSP9
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Produkt ist nicht verfügbar
ZHB6718TA DIODES INCORPORATED ZHB6718.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP x2; bipolar; 20V; 2.5A; 2W; SM8; H-bridge
Collector-emitter voltage: 20V
Power dissipation: 2W
Polarisation: bipolar
Pulsed collector current: 6A
Type of transistor: NPN / PNP x2
Current gain: 200
Kind of package: reel; tape
Semiconductor structure: H-bridge
Case: SM8
Frequency: 140MHz
Collector current: 2.5A
Mounting: SMD
Produkt ist nicht verfügbar
ZHB6790TA DIODES INCORPORATED ZHB6790.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP x2; bipolar; 40V; 2A; 2W; SM8; H-bridge
Type of transistor: NPN / PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 2W
Case: SM8
Pulsed collector current: 6A
Current gain: 150
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Semiconductor structure: H-bridge
Produkt ist nicht verfügbar
ZHB6792TA DIODES INCORPORATED ZHB6792.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP x2; bipolar; 70V; 1A; 2W; SM8; H-bridge
Type of transistor: NPN / PNP x2
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 2W
Case: SM8
Pulsed collector current: 2A
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Semiconductor structure: H-bridge
Produkt ist nicht verfügbar
FMMT591QTA FMMT591QTA DIODES INCORPORATED FMMT591Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Produkt ist nicht verfügbar
FMMT591TA FMMT591TA DIODES INCORPORATED FMMT591.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 2280 Stücke:
Lieferzeit 14-21 Tag (e)
375+0.19 EUR
415+ 0.17 EUR
475+ 0.15 EUR
545+ 0.13 EUR
575+ 0.12 EUR
Mindestbestellmenge: 375
SMBJ6.0A-13-F SMBJ6.0A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67÷7.67V; 58.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3605 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.25 EUR
500+ 0.14 EUR
565+ 0.13 EUR
635+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 295
SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 855 Stücke:
Lieferzeit 14-21 Tag (e)
230+0.32 EUR
375+ 0.19 EUR
425+ 0.17 EUR
510+ 0.14 EUR
535+ 0.13 EUR
Mindestbestellmenge: 230
SBR6100CTL-13 DIODES INCORPORATED SBR6100CTL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 78A
Max. forward voltage: 0.74V
Produkt ist nicht verfügbar
SBR6100CTLQ-13 DIODES INCORPORATED SBR6100CTLQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 6A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 78A
Max. forward voltage: 0.74V
Application: automotive industry
Produkt ist nicht verfügbar
SMAJ33CA-13-F SMAJ33CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3916 Stücke:
Lieferzeit 14-21 Tag (e)
290+0.25 EUR
625+ 0.11 EUR
705+ 0.1 EUR
800+ 0.09 EUR
845+ 0.085 EUR
Mindestbestellmenge: 290
SMAJ33CAQ-13-F SMAJ33CAQ-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
AP358SG-13 AP358SG-13 DIODES INCORPORATED AP358.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 3÷32V; Ch: 2; SOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SOP8
Operating temperature: 0...70°C
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.6W
Operating voltage: 3...32V
auf Bestellung 2086 Stücke:
Lieferzeit 14-21 Tag (e)
203+0.35 EUR
424+ 0.17 EUR
527+ 0.14 EUR
607+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 203
LMV358SG-13 LMV358SG-13 DIODES INCORPORATED LMV321_358.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; SOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Mounting: SMT
Number of channels: 2
Case: SOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Operating voltage: 2.7...5.5V
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
172+ 0.42 EUR
290+ 0.25 EUR
305+ 0.23 EUR
Mindestbestellmenge: 136
AS431ARTR-G1 AS431ARTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
315+0.23 EUR
465+ 0.15 EUR
530+ 0.14 EUR
585+ 0.12 EUR
Mindestbestellmenge: 315
AS431HANTR-G1 AS431HANTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)
315+0.23 EUR
680+ 0.11 EUR
755+ 0.095 EUR
930+ 0.077 EUR
980+ 0.073 EUR
Mindestbestellmenge: 315
MBR10200CT-G1 DIODES INCORPORATED MBR10200C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; tube; Ir: 15mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Case: TO220AB
Kind of package: tube
Leakage current: 15mA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
BZT52C12-13-F BZT52C12-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 7450 Stücke:
Lieferzeit 14-21 Tag (e)
1900+0.038 EUR
2550+ 0.028 EUR
2875+ 0.025 EUR
3250+ 0.022 EUR
3425+ 0.021 EUR
Mindestbestellmenge: 1900
BZT52C12-7-F BZT52C12-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5525 Stücke:
Lieferzeit 14-21 Tag (e)
1600+0.045 EUR
2150+ 0.033 EUR
2675+ 0.027 EUR
3050+ 0.023 EUR
3250+ 0.022 EUR
Mindestbestellmenge: 1600
BZT52C12LP-7 BZT52C12LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
auf Bestellung 2715 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
550+ 0.13 EUR
620+ 0.12 EUR
655+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 320
BZT52C12Q-7-F BZT52C12Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
1100+0.066 EUR
1220+ 0.059 EUR
1520+ 0.047 EUR
1620+ 0.045 EUR
Mindestbestellmenge: 1100
BZT52C12S-7-F BZT52C12S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
810+0.089 EUR
1930+ 0.037 EUR
2140+ 0.033 EUR
2780+ 0.026 EUR
2950+ 0.024 EUR
Mindestbestellmenge: 810
BZT52C12T-7 BZT52C12T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
74AUP2G32RA3-7 DIODES INCORPORATED 74AUP2G32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1210-8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AUP
Produkt ist nicht verfügbar
74LVC2G32HD4-7 DIODES INCORPORATED 74LVC2G32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
74LVC2G32RA3-7 DIODES INCORPORATED 74LVC2G32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1210-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
AP2501M8-13 DIODES INCORPORATED AP25x1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2.5A
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Produkt ist nicht verfügbar
AP2501MP-13 DIODES INCORPORATED AP25x1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Number of channels: 1
Output current: 2.5A
Mounting: SMD
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
KBP208G KBP208G DIODES INCORPORATED KBP2005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 65A; flat
Leads: flat pin
Case: KBP
Max. forward impulse current: 65A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
128+0.56 EUR
Mindestbestellmenge: 128
DMP2036UVT-13 DMP2036UVT-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP2036UVT-7 DMP2036UVT-7 DIODES INCORPORATED DMP2036UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Produkt ist nicht verfügbar
BCX5110TA BCX5110TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
605+ 0.12 EUR
685+ 0.1 EUR
790+ 0.091 EUR
835+ 0.086 EUR
Mindestbestellmenge: 320
BCX5116TA BCX5116TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
BCX51TA BCX51TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
405+0.18 EUR
490+ 0.14 EUR
Mindestbestellmenge: 405
BCX5210TA BCX5210TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
BCX5216QTA BCX5216QTA DIODES INCORPORATED BCX5216Q_BCX5316Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 2A
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Produkt ist nicht verfügbar
BCX5216TA BCX5216TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
BCX52TA BCX52TA DIODES INCORPORATED BCX51_52_53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
MMBTH10-7-F MMBTH10-7-F DIODES INCORPORATED ds31031.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Produkt ist nicht verfügbar
74LVC1G3157FZ4-7 DIODES INCORPORATED 74LVC1G3157.pdf Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: analog switch
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Family: LVC
Kind of package: reel; tape
Operating temperature: -40...150°C
Output configuration: SPDT
Produkt ist nicht verfügbar
DMN4008LFG-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMN4008LFG-7 DIODES INCORPORATED DMN4008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT4008LFV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 1.9W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 12mΩ
Drain current: 9.7A
Drain-source voltage: 40V
Gate charge: 17.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Produkt ist nicht verfügbar
DMTH4008LFDFW-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LFDFWQ-13 DIODES INCORPORATED DMTH4008LFDFWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LFDFWQ-7 DIODES INCORPORATED DMTH4008LFDFWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LPS-13 DIODES INCORPORATED DMTH4008LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.2A
Pulsed drain current: 110A
Power dissipation: 2.99W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LPSQ-13 DIODES INCORPORATED DMTH4008LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.2A
Pulsed drain current: 110A
Power dissipation: 2.99W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PAM8009KGR DIODES INCORPORATED PAM8009_NPA.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; headphone driver,stereo
Frequency: 250Hz
Operating temperature: -40...85°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 3W
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.8...5.5V DC
Mounting: SMD
Case: QFN16
Produkt ist nicht verfügbar
PAM8019KGR PAM8019KGR DIODES INCORPORATED PAM8019.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; stereo,thermal protection
Type of integrated circuit: audio amplifier
Case: UQFN20
Number of channels: 2
Integrated circuit features: stereo; thermal protection
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 250Hz
Output power: 3W
Kind of package: reel; tape
Voltage supply range: 2.8...5.5V DC
Amplifier class: D
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
92+ 0.78 EUR
104+ 0.69 EUR
119+ 0.6 EUR
126+ 0.57 EUR
Mindestbestellmenge: 75
D24V0F2U3WQ-7 D24V0F2U3WQ-7 DIODES INCORPORATED Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 2.5A; SOT323; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Case: SOT323
Max. off-state voltage: 24V
Max. forward impulse current: 2.5A
Breakdown voltage: 27V
Leakage current: 0.1µA
Number of channels: 2
Produkt ist nicht verfügbar
AP1501-33K5G-13 AP1501-33K5G-13 DIODES INCORPORATED AP1501x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; TO263-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.97 EUR
40+ 1.79 EUR
53+ 1.36 EUR
56+ 1.29 EUR
Mindestbestellmenge: 37
AP1501-50K5G-13 AP1501-50K5G-13 DIODES INCORPORATED AP1501x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 5VDC; 3A; TO263-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 5V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 80%
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
52+ 1.39 EUR
68+ 1.06 EUR
72+ 1 EUR
Mindestbestellmenge: 47
AP1501-K5G-13 AP1501-K5G-13 DIODES INCORPORATED AP1501x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.1 EUR
Mindestbestellmenge: 34
ZVN2106A ZVN2106A DIODES INCORPORATED ZVN2106A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 2183 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
126+ 0.57 EUR
147+ 0.49 EUR
162+ 0.44 EUR
172+ 0.42 EUR
Mindestbestellmenge: 69
ZVN2106ASTZ ZVN2106ASTZ DIODES INCORPORATED ZVN2106A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
126+ 0.57 EUR
142+ 0.5 EUR
160+ 0.45 EUR
169+ 0.42 EUR
Mindestbestellmenge: 61
74LVCE1G32W5-7 74LVCE1G32.pdf
74LVCE1G32W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.4÷5.5VDC; LVCE
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.4...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: totem pole
Family: LVCE
Produkt ist nicht verfügbar
AP2280-2WG-7 AP2280.pdf
AP2280-2WG-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 1.5...6V DC
On-state resistance: 80mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT25
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
193+ 0.37 EUR
251+ 0.29 EUR
266+ 0.27 EUR
Mindestbestellmenge: 173
74LVC1G02W5-7 74LVC1G02.pdf
74LVC1G02W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: push-pull
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
74AHCT1G02W5-7 74AHCT1G02.pdf
74AHCT1G02W5-7
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Produkt ist nicht verfügbar
PAM8012AZN PAM8012.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9
Type of integrated circuit: audio amplifier
Frequency: 250Hz
Output power: 2W
Integrated circuit features: low distortion THD; low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: WCSP9
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Produkt ist nicht verfügbar
ZHB6718TA ZHB6718.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP x2; bipolar; 20V; 2.5A; 2W; SM8; H-bridge
Collector-emitter voltage: 20V
Power dissipation: 2W
Polarisation: bipolar
Pulsed collector current: 6A
Type of transistor: NPN / PNP x2
Current gain: 200
Kind of package: reel; tape
Semiconductor structure: H-bridge
Case: SM8
Frequency: 140MHz
Collector current: 2.5A
Mounting: SMD
Produkt ist nicht verfügbar
ZHB6790TA ZHB6790.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP x2; bipolar; 40V; 2A; 2W; SM8; H-bridge
Type of transistor: NPN / PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Power dissipation: 2W
Case: SM8
Pulsed collector current: 6A
Current gain: 150
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Semiconductor structure: H-bridge
Produkt ist nicht verfügbar
ZHB6792TA ZHB6792.pdf
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP x2; bipolar; 70V; 1A; 2W; SM8; H-bridge
Type of transistor: NPN / PNP x2
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 1A
Power dissipation: 2W
Case: SM8
Pulsed collector current: 2A
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Semiconductor structure: H-bridge
Produkt ist nicht verfügbar
FMMT591QTA FMMT591Q.pdf
FMMT591QTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Produkt ist nicht verfügbar
FMMT591TA FMMT591.pdf
FMMT591TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 2280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
375+0.19 EUR
415+ 0.17 EUR
475+ 0.15 EUR
545+ 0.13 EUR
575+ 0.12 EUR
Mindestbestellmenge: 375
SMBJ6.0A-13-F SMBJ_ser.pdf
SMBJ6.0A-13-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67÷7.67V; 58.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.25 EUR
500+ 0.14 EUR
565+ 0.13 EUR
635+ 0.11 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 295
SMBJ6.0CA-13-F SMBJ_ser.pdf
SMBJ6.0CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
230+0.32 EUR
375+ 0.19 EUR
425+ 0.17 EUR
510+ 0.14 EUR
535+ 0.13 EUR
Mindestbestellmenge: 230
SBR6100CTL-13 SBR6100CTL.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A x2
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 78A
Max. forward voltage: 0.74V
Produkt ist nicht verfügbar
SBR6100CTLQ-13 SBR6100CTLQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 6A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 6A
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 78A
Max. forward voltage: 0.74V
Application: automotive industry
Produkt ist nicht verfügbar
SMAJ33CA-13-F SMAJ_ser.pdf
SMAJ33CA-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3916 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
290+0.25 EUR
625+ 0.11 EUR
705+ 0.1 EUR
800+ 0.09 EUR
845+ 0.085 EUR
Mindestbestellmenge: 290
SMAJ33CAQ-13-F SMAJ_ser.pdf
SMAJ33CAQ-13-F
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Produkt ist nicht verfügbar
AP358SG-13 AP358.pdf
AP358SG-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 3÷32V; Ch: 2; SOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SOP8
Operating temperature: 0...70°C
Input offset voltage: 2mV
Kind of package: reel; tape
Power dissipation: 0.6W
Operating voltage: 3...32V
auf Bestellung 2086 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
203+0.35 EUR
424+ 0.17 EUR
527+ 0.14 EUR
607+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 203
LMV358SG-13 LMV321_358.pdf
LMV358SG-13
Hersteller: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5.5V; Ch: 2; SOP8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Open-loop gain: 10dB
Mounting: SMT
Number of channels: 2
Case: SOP8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Operating voltage: 2.7...5.5V
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
136+0.53 EUR
172+ 0.42 EUR
290+ 0.25 EUR
305+ 0.23 EUR
Mindestbestellmenge: 136
AS431ARTR-G1 AS431.pdf
AS431ARTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
465+ 0.15 EUR
530+ 0.14 EUR
585+ 0.12 EUR
Mindestbestellmenge: 315
AS431HANTR-G1 AS431H.pdf
AS431HANTR-G1
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
680+ 0.11 EUR
755+ 0.095 EUR
930+ 0.077 EUR
980+ 0.073 EUR
Mindestbestellmenge: 315
MBR10200CT-G1 MBR10200C.pdf
Hersteller: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; tube; Ir: 15mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Case: TO220AB
Kind of package: tube
Leakage current: 15mA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
BZT52C12-13-F BZT52Cxx_ser.pdf
BZT52C12-13-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 7450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1900+0.038 EUR
2550+ 0.028 EUR
2875+ 0.025 EUR
3250+ 0.022 EUR
3425+ 0.021 EUR
Mindestbestellmenge: 1900
BZT52C12-7-F BZT52Cxx_ser.pdf
BZT52C12-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5525 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1600+0.045 EUR
2150+ 0.033 EUR
2675+ 0.027 EUR
3050+ 0.023 EUR
3250+ 0.022 EUR
Mindestbestellmenge: 1600
BZT52C12LP-7 BZT52CxxLP_ser.pdf
BZT52C12LP-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
auf Bestellung 2715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
320+0.23 EUR
550+ 0.13 EUR
620+ 0.12 EUR
655+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 320
BZT52C12Q-7-F BZT52Cxx_ser.pdf
BZT52C12Q-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1100+0.066 EUR
1220+ 0.059 EUR
1520+ 0.047 EUR
1620+ 0.045 EUR
Mindestbestellmenge: 1100
BZT52C12S-7-F BZT52CxxS_ser.pdf
BZT52C12S-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
810+0.089 EUR
1930+ 0.037 EUR
2140+ 0.033 EUR
2780+ 0.026 EUR
2950+ 0.024 EUR
Mindestbestellmenge: 810
BZT52C12T-7 BZT52CxxT_ser.pdf
BZT52C12T-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Produkt ist nicht verfügbar
74AUP2G32RA3-7 74AUP2G32.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 0.8÷3.6VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1210-8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: AUP
Produkt ist nicht verfügbar
74LVC2G32HD4-7 74LVC2G32.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN2010-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
74LVC2G32RA3-7 74LVC2G32.pdf
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 2; IN: 2; CMOS; SMD; X2-DFN1210-8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1210-8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LVC
Produkt ist nicht verfügbar
AP2501M8-13 AP25x1.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2.5A
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Kind of output: P-Channel
Active logical level: low
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
On-state resistance: 70mΩ
Produkt ist nicht verfügbar
AP2501MP-13 AP25x1.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Number of channels: 1
Output current: 2.5A
Mounting: SMD
On-state resistance: 70mΩ
Type of integrated circuit: power switch
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: MSOP8EP
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
KBP208G KBP2005G_ser.pdf
KBP208G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 65A; flat
Leads: flat pin
Case: KBP
Max. forward impulse current: 65A
Kind of package: tube
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
128+0.56 EUR
Mindestbestellmenge: 128
DMP2036UVT-13
DMP2036UVT-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP2036UVT-7 DMP2036UVT.pdf
DMP2036UVT-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Produkt ist nicht verfügbar
BCX5110TA BCX51_52_53.pdf
BCX5110TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
320+0.23 EUR
605+ 0.12 EUR
685+ 0.1 EUR
790+ 0.091 EUR
835+ 0.086 EUR
Mindestbestellmenge: 320
BCX5116TA BCX51_52_53.pdf
BCX5116TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
BCX51TA BCX51_52_53.pdf
BCX51TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
405+0.18 EUR
490+ 0.14 EUR
Mindestbestellmenge: 405
BCX5210TA BCX51_52_53.pdf
BCX5210TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
BCX5216QTA BCX5216Q_BCX5316Q.pdf
BCX5216QTA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Pulsed collector current: 2A
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Produkt ist nicht verfügbar
BCX5216TA BCX51_52_53.pdf
BCX5216TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
BCX52TA BCX51_52_53.pdf
BCX52TA
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
MMBTH10-7-F ds31031.pdf
MMBTH10-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Produkt ist nicht verfügbar
74LVC1G3157FZ4-7 74LVC1G3157.pdf
Hersteller: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: analog switch
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Family: LVC
Kind of package: reel; tape
Operating temperature: -40...150°C
Output configuration: SPDT
Produkt ist nicht verfügbar
DMN4008LFG-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMN4008LFG-7 DMN4008LFG.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Drain-source voltage: 40V
Drain current: 15.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMT4008LFV-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 1.9W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 12mΩ
Drain current: 9.7A
Drain-source voltage: 40V
Gate charge: 17.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Produkt ist nicht verfügbar
DMTH4008LFDFW-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LFDFWQ-13 DMTH4008LFDFWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LFDFWQ-7 DMTH4008LFDFWQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8.2A
Pulsed drain current: 80A
Power dissipation: 2.35W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LPS-13 DMTH4008LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.2A
Pulsed drain current: 110A
Power dissipation: 2.99W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LPSQ-13 DMTH4008LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.2A
Pulsed drain current: 110A
Power dissipation: 2.99W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PAM8009KGR PAM8009_NPA.pdf
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; headphone driver,stereo
Frequency: 250Hz
Operating temperature: -40...85°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 3W
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.8...5.5V DC
Mounting: SMD
Case: QFN16
Produkt ist nicht verfügbar
PAM8019KGR PAM8019.pdf
PAM8019KGR
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; stereo,thermal protection
Type of integrated circuit: audio amplifier
Case: UQFN20
Number of channels: 2
Integrated circuit features: stereo; thermal protection
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 250Hz
Output power: 3W
Kind of package: reel; tape
Voltage supply range: 2.8...5.5V DC
Amplifier class: D
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
75+0.96 EUR
92+ 0.78 EUR
104+ 0.69 EUR
119+ 0.6 EUR
126+ 0.57 EUR
Mindestbestellmenge: 75
D24V0F2U3WQ-7
D24V0F2U3WQ-7
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 2.5A; SOT323; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Case: SOT323
Max. off-state voltage: 24V
Max. forward impulse current: 2.5A
Breakdown voltage: 27V
Leakage current: 0.1µA
Number of channels: 2
Produkt ist nicht verfügbar
AP1501-33K5G-13 AP1501x-DTE.pdf
AP1501-33K5G-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; TO263-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
37+1.97 EUR
40+ 1.79 EUR
53+ 1.36 EUR
56+ 1.29 EUR
Mindestbestellmenge: 37
AP1501-50K5G-13 AP1501x-DTE.pdf
AP1501-50K5G-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 5VDC; 3A; TO263-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 5V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 80%
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
47+1.53 EUR
52+ 1.39 EUR
68+ 1.06 EUR
72+ 1 EUR
Mindestbestellmenge: 47
AP1501-K5G-13 AP1501x-DTE.pdf
AP1501-K5G-13
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 1.23÷37VDC; 3A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 1.23...37V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 73%
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
34+2.1 EUR
Mindestbestellmenge: 34
ZVN2106A ZVN2106A.pdf
ZVN2106A
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 2183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
126+ 0.57 EUR
147+ 0.49 EUR
162+ 0.44 EUR
172+ 0.42 EUR
Mindestbestellmenge: 69
ZVN2106ASTZ ZVN2106A.pdf
ZVN2106ASTZ
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
61+1.19 EUR
126+ 0.57 EUR
142+ 0.5 EUR
160+ 0.45 EUR
169+ 0.42 EUR
Mindestbestellmenge: 61
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