Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 1197 nach 1259
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BCX5316TA | DIODES INCORPORATED |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX53TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX53TC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: SOT89 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
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| DMHT6016LFJ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W Kind of package: reel; tape Power dissipation: 2.7W Polarisation: unipolar Case: V-DFN5045-12 Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 11.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET |
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B120-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMA; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 1A Max. forward voltage: 0.5V Max. off-state voltage: 20V Capacitance: 110pF Case: SMA Max. forward impulse current: 30A |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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B220-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.5V Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Case: SMB Capacitance: 200pF Type of diode: Schottky rectifying Max. forward impulse current: 50A |
auf Bestellung 3575 Stücke: Lieferzeit 14-21 Tag (e) |
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| AP2303MPTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.6...3.3V Output current: 1.75A Mounting: SMD Case: PSOP8 Number of channels: 1 Operating temperature: -40...85°C Application: for DDR memories Kind of package: reel; tape Operating voltage: 1.2...5.5/3...5.5V |
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AP2303MTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.6...3.3V Output current: 1.75A Mounting: SMD Case: SO8 Number of channels: 1 Operating temperature: -40...85°C Application: for DDR memories Kind of package: reel; tape Operating voltage: 1.2...5.5/3...5.5V |
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| DMP2023UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 0.73W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMN2023UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W Mounting: SMD Case: X1-WLB1818-4 Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Drain-source voltage: 24V Drain current: 4.8A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar |
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| DMP2023UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.6A Pulsed drain current: -40A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
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DMG3415UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
auf Bestellung 2085 Stücke: Lieferzeit 14-21 Tag (e) |
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| PAM8007NHR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 250Hz; Pout: 3W; headphone driver,stereo Frequency: 250Hz Operating temperature: -20...125°C Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 3W Integrated circuit features: headphone driver; stereo Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: SSOP24 |
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DMG9926UDM-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.98W Case: SOT26 Gate-source voltage: ±8V On-state resistance: 40mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
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DMG9926USD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.7A Pulsed drain current: 30A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced |
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FZT657TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.2W Case: SOT223 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 30MHz |
auf Bestellung 895 Stücke: Lieferzeit 14-21 Tag (e) |
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| PAM8001NHR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 250Hz; Pout: 2.8W; Ch: 2; Amp.class: D; SSOP24 Frequency: 250Hz Operating temperature: -40...125°C Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 2.8W Integrated circuit features: low distortion THD; low noise; stereo; thermal protection; volume control Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: SSOP24 |
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PAM8003DR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 210kHz; Pout: 2.5W; Ch: 2; Amp.class: D; SO16 Frequency: 210kHz Operating temperature: -40...85°C Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 2.5W Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: SO16 |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| PAM8004DR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 210kHz; Pout: 2.5W; Ch: 2; Amp.class: D; SOP16 Frequency: 210kHz Operating temperature: -40...85°C Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 2.5W Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: SOP16 |
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| PAM8006ATR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32 Frequency: 300kHz Operating temperature: -40...125°C Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 15W Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: QFN32 |
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| PAM8008DR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 250Hz; Pout: 3W; Ch: 2; Amp.class: D; SOP16 Frequency: 250Hz Operating temperature: -20...125°C Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 3W Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: SOP16 |
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| PAM8013AKR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 400kHz; Pout: 3W; Ch: 1; Amp.class: D Type of integrated circuit: audio amplifier Frequency: 400kHz Output power: 3W Integrated circuit features: low distortion THD; low noise; thermal protection Mounting: SMD Number of channels: 1 Amplifier class: D Case: U-FLGA1515-9 Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.8...5.5V DC |
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| PAM8014AZR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 250Hz; Pout: 3.2W; Ch: 1; Amp.class: D Type of integrated circuit: audio amplifier Case: U-WLB1313-9 Number of channels: 1 Integrated circuit features: low noise; thermal protection Mounting: SMD Operating temperature: -40...125°C Frequency: 250Hz Output power: 3.2W Kind of package: reel; tape Voltage supply range: 2.5...5.5V DC Amplifier class: D |
Produkt ist nicht verfügbar |
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| PAM8016AKR | DIODES INCORPORATED |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: haptic motor controller Interface: PWM Case: U-FLGA1515-9 Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA) Mounting: SMD Operating temperature: -25...85°C Application: haptic motors; linear actuator; servos Operating voltage: 2.8...5.5V |
Produkt ist nicht verfügbar |
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| PAM8124RHR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 360kHz; Pout: 15W; Ch: 2; Amp.class: D; 10÷26VDC Type of integrated circuit: audio amplifier Case: TSSOP24EP Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Frequency: 360kHz Output power: 15W Kind of package: reel; tape Voltage supply range: 10...26V DC Amplifier class: D |
Produkt ist nicht verfügbar |
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PAM8301AAF | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 1.5W; low noise; Ch: 1; Amp.class: D Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 Case: SOT23-6 Operating temperature: -40...85°C Voltage supply range: 2.5...5.5V DC Integrated circuit features: low noise Kind of package: reel; tape Amplifier class: D Output power: 1.5W |
Produkt ist nicht verfügbar |
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PAM8302AADCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 Case: SO8 Operating temperature: -40...85°C Voltage supply range: 2...5.5V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Output power: 2.5W |
Produkt ist nicht verfügbar |
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| PAM8302AASCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 Case: MSOP8 Operating temperature: -40...85°C Voltage supply range: 2...5.5V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Output power: 2.5W |
Produkt ist nicht verfügbar |
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| PAM8302AAYCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 Case: U-DFN3030-8 Operating temperature: -40...85°C Voltage supply range: 2...5.5V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Output power: 2.5W |
Produkt ist nicht verfügbar |
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| PAM8303CBSC | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 Case: MSOP8 Operating temperature: -40...85°C Voltage supply range: 2.8...5.5V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Output power: 3W |
Produkt ist nicht verfügbar |
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| PAM8303CBYC | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 Case: U-DFN3030-8 Operating temperature: -40...85°C Voltage supply range: 2.8...5.5V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Output power: 3W |
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FZT851TA | DIODES INCORPORATED |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 5890 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar |
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BSS123Q-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar |
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BSS123TA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123WQ-7-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2225LQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.225Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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AP1534SG-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8 Mounting: SMD Operating temperature: -20...85°C Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Case: SOP8 Frequency: 300kHz Output voltage: 0.8...18V DC Output current: 2A Type of integrated circuit: PMIC Input voltage: 4.4...18V DC Efficiency: 91% |
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ZTX853 | DIODES INCORPORATED |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: bulk |
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| PAM8304ASR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 Case: MSOP8 Operating temperature: -40...85°C Voltage supply range: 2.8...6V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Output power: 3W |
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| PAM8304AYR | DIODES INCORPORATED |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 1 Case: U-DFN3030-8 Operating temperature: -40...85°C Voltage supply range: 2.8...6V DC Integrated circuit features: low noise; thermal protection Kind of package: reel; tape Amplifier class: D Output power: 3W |
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MMBTA13-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA14-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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MMBTA28-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 0.5A; 310mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.31W Case: SOT23 Current gain: 10k Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
auf Bestellung 4725 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ12CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1980 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC1G07SE-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA Mounting: SMD Kind of package: reel; tape Case: SOT353 Manufacturer series: LVC Type of integrated circuit: digital Number of channels: 1 Quiescent current: 200µA Kind of output: open drain Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of integrated circuit: buffer; non-inverting |
auf Bestellung 2009 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXM61N03FTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.1A; 0.625W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.1A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1557 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN0545A | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 450V; 0.09A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 450V Drain current: 0.09A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 50Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMGD7N45SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 450V Drain current: 850mA Pulsed drain current: 2.2A Power dissipation: 1.64W Case: SO8 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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GBJ1506-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 240A Version: flat Case: GBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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B550C-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 5A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 5A Semiconductor structure: single diode Capacitance: 300pF Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
auf Bestellung 2777 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54JW-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT363; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: double independent Capacitance: 10pF Max. forward voltage: 1V Case: SOT363 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
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AP2127K-1.0TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2127K-1.2TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.2V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2127K-1.5TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.5V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2127K-1.8TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.8V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2127K-2.5TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.5V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
Produkt ist nicht verfügbar |
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AP2127K-2.8TRG1 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.4A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.8V Output current: 0.4A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: AP2127 Integrated circuit features: shutdown mode control input |
auf Bestellung 1055 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCX5316TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 275+ | 0.26 EUR |
| 530+ | 0.14 EUR |
| 590+ | 0.12 EUR |
| 640+ | 0.11 EUR |
| BCX53TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| 590+ | 0.12 EUR |
| 670+ | 0.11 EUR |
| 775+ | 0.092 EUR |
| 820+ | 0.087 EUR |
| BCX53TC |
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: SOT89
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
| DMHT6016LFJ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Case: V-DFN5045-12
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 60A; 2.7W
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Case: V-DFN5045-12
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| B120-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMA; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Capacitance: 110pF
Case: SMA
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMA; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Capacitance: 110pF
Case: SMA
Max. forward impulse current: 30A
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 570+ | 0.13 EUR |
| 920+ | 0.078 EUR |
| 1040+ | 0.069 EUR |
| 1240+ | 0.058 EUR |
| 1310+ | 0.055 EUR |
| B220-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Capacitance: 200pF
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Capacitance: 200pF
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
auf Bestellung 3575 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 525+ | 0.14 EUR |
| 590+ | 0.12 EUR |
| 750+ | 0.096 EUR |
| 790+ | 0.091 EUR |
| AP2303MPTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.6...3.3V
Output current: 1.75A
Mounting: SMD
Case: PSOP8
Number of channels: 1
Operating temperature: -40...85°C
Application: for DDR memories
Kind of package: reel; tape
Operating voltage: 1.2...5.5/3...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; PSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.6...3.3V
Output current: 1.75A
Mounting: SMD
Case: PSOP8
Number of channels: 1
Operating temperature: -40...85°C
Application: for DDR memories
Kind of package: reel; tape
Operating voltage: 1.2...5.5/3...5.5V
Produkt ist nicht verfügbar
| AP2303MTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.6...3.3V
Output current: 1.75A
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...85°C
Application: for DDR memories
Kind of package: reel; tape
Operating voltage: 1.2...5.5/3...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷3.3V; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.6...3.3V
Output current: 1.75A
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...85°C
Application: for DDR memories
Kind of package: reel; tape
Operating voltage: 1.2...5.5/3...5.5V
Produkt ist nicht verfügbar
| DMP2023UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN2023UCB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Mounting: SMD
Case: X1-WLB1818-4
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 24V
Drain current: 4.8A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W
Mounting: SMD
Case: X1-WLB1818-4
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 24V
Drain current: 4.8A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Produkt ist nicht verfügbar
| DMP2023UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMG3415UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 0.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
auf Bestellung 2085 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 0.22 EUR |
| 360+ | 0.2 EUR |
| 410+ | 0.18 EUR |
| 460+ | 0.16 EUR |
| 490+ | 0.15 EUR |
| PAM8007NHR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; headphone driver,stereo
Frequency: 250Hz
Operating temperature: -20...125°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 3W
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SSOP24
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; headphone driver,stereo
Frequency: 250Hz
Operating temperature: -20...125°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 3W
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SSOP24
Produkt ist nicht verfügbar
| DMG9926UDM-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMG9926USD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FZT657TA |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 30MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 30MHz
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.11 EUR |
| 128+ | 0.56 EUR |
| 145+ | 0.5 EUR |
| 173+ | 0.41 EUR |
| 183+ | 0.39 EUR |
| PAM8001NHR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2.8W; Ch: 2; Amp.class: D; SSOP24
Frequency: 250Hz
Operating temperature: -40...125°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 2.8W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection; volume control
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SSOP24
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2.8W; Ch: 2; Amp.class: D; SSOP24
Frequency: 250Hz
Operating temperature: -40...125°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 2.8W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection; volume control
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SSOP24
Produkt ist nicht verfügbar
| PAM8003DR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 210kHz; Pout: 2.5W; Ch: 2; Amp.class: D; SO16
Frequency: 210kHz
Operating temperature: -40...85°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 2.5W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SO16
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 210kHz; Pout: 2.5W; Ch: 2; Amp.class: D; SO16
Frequency: 210kHz
Operating temperature: -40...85°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 2.5W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SO16
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| 1000+ | 0.54 EUR |
| PAM8004DR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 210kHz; Pout: 2.5W; Ch: 2; Amp.class: D; SOP16
Frequency: 210kHz
Operating temperature: -40...85°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 2.5W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SOP16
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 210kHz; Pout: 2.5W; Ch: 2; Amp.class: D; SOP16
Frequency: 210kHz
Operating temperature: -40...85°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 2.5W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SOP16
Produkt ist nicht verfügbar
| PAM8006ATR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Frequency: 300kHz
Operating temperature: -40...125°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN32
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Frequency: 300kHz
Operating temperature: -40...125°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 15W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: QFN32
Produkt ist nicht verfügbar
| PAM8008DR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; Ch: 2; Amp.class: D; SOP16
Frequency: 250Hz
Operating temperature: -20...125°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 3W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SOP16
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; Ch: 2; Amp.class: D; SOP16
Frequency: 250Hz
Operating temperature: -20...125°C
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 3W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: SOP16
Produkt ist nicht verfügbar
| PAM8013AKR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 400kHz; Pout: 3W; Ch: 1; Amp.class: D
Type of integrated circuit: audio amplifier
Frequency: 400kHz
Output power: 3W
Integrated circuit features: low distortion THD; low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: U-FLGA1515-9
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.8...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 400kHz; Pout: 3W; Ch: 1; Amp.class: D
Type of integrated circuit: audio amplifier
Frequency: 400kHz
Output power: 3W
Integrated circuit features: low distortion THD; low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: U-FLGA1515-9
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.8...5.5V DC
Produkt ist nicht verfügbar
| PAM8014AZR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3.2W; Ch: 1; Amp.class: D
Type of integrated circuit: audio amplifier
Case: U-WLB1313-9
Number of channels: 1
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 250Hz
Output power: 3.2W
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3.2W; Ch: 1; Amp.class: D
Type of integrated circuit: audio amplifier
Case: U-WLB1313-9
Number of channels: 1
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 250Hz
Output power: 3.2W
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Amplifier class: D
Produkt ist nicht verfügbar
| PAM8016AKR |
|
Hersteller: DIODES INCORPORATED
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: haptic motor controller
Interface: PWM
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Mounting: SMD
Operating temperature: -25...85°C
Application: haptic motors; linear actuator; servos
Operating voltage: 2.8...5.5V
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; haptic motor controller; PWM; U-FLGA1515-9
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: haptic motor controller
Interface: PWM
Case: U-FLGA1515-9
Integrated circuit features: Eccentric Rotating Mass (ERM); Linear Resonance Acutator (LRA)
Mounting: SMD
Operating temperature: -25...85°C
Application: haptic motors; linear actuator; servos
Operating voltage: 2.8...5.5V
Produkt ist nicht verfügbar
| PAM8124RHR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 360kHz; Pout: 15W; Ch: 2; Amp.class: D; 10÷26VDC
Type of integrated circuit: audio amplifier
Case: TSSOP24EP
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 360kHz
Output power: 15W
Kind of package: reel; tape
Voltage supply range: 10...26V DC
Amplifier class: D
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 360kHz; Pout: 15W; Ch: 2; Amp.class: D; 10÷26VDC
Type of integrated circuit: audio amplifier
Case: TSSOP24EP
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 360kHz
Output power: 15W
Kind of package: reel; tape
Voltage supply range: 10...26V DC
Amplifier class: D
Produkt ist nicht verfügbar
| PAM8301AAF |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1.5W; low noise; Ch: 1; Amp.class: D
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: SOT23-6
Operating temperature: -40...85°C
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: low noise
Kind of package: reel; tape
Amplifier class: D
Output power: 1.5W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1.5W; low noise; Ch: 1; Amp.class: D
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: SOT23-6
Operating temperature: -40...85°C
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: low noise
Kind of package: reel; tape
Amplifier class: D
Output power: 1.5W
Produkt ist nicht verfügbar
| PAM8302AADCR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 2.5W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 2.5W
Produkt ist nicht verfügbar
| PAM8302AASCR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 2.5W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 2.5W
Produkt ist nicht verfügbar
| PAM8302AAYCR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 2.5W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 2.5W
Produkt ist nicht verfügbar
| PAM8303CBSC |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2.8...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 3W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2.8...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 3W
Produkt ist nicht verfügbar
| PAM8303CBYC |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2.8...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 3W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2.8...5.5V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 3W
Produkt ist nicht verfügbar
| FZT851TA | |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 113+ | 0.64 EUR |
| 126+ | 0.57 EUR |
| 145+ | 0.49 EUR |
| 153+ | 0.47 EUR |
| BSS123-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 5890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 720+ | 0.1 EUR |
| 1780+ | 0.04 EUR |
| 2110+ | 0.034 EUR |
| 2370+ | 0.03 EUR |
| 2500+ | 0.029 EUR |
| 3000+ | 0.028 EUR |
| BSS123Q-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.68A
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.68A
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| BSS123Q-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| BSS123TA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| 795+ | 0.09 EUR |
| 930+ | 0.077 EUR |
| 1070+ | 0.067 EUR |
| 1135+ | 0.063 EUR |
| BSS123W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Power dissipation: 0.2W
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 900+ | 0.08 EUR |
| 1055+ | 0.068 EUR |
| 1215+ | 0.059 EUR |
| 1285+ | 0.056 EUR |
| BSS123WQ-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 375+ | 0.19 EUR |
| 480+ | 0.14 EUR |
| DMP2225LQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.225Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.225Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| AP1534SG-13 |
|
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Mounting: SMD
Operating temperature: -20...85°C
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: SOP8
Frequency: 300kHz
Output voltage: 0.8...18V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 4.4...18V DC
Efficiency: 91%
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.4÷18VDC; Uout: 0.8÷18VDC; 2A; SOP8
Mounting: SMD
Operating temperature: -20...85°C
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: SOP8
Frequency: 300kHz
Output voltage: 0.8...18V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 4.4...18V DC
Efficiency: 91%
Produkt ist nicht verfügbar
| ZTX853 |
|
Hersteller: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
| PAM8304ASR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2.8...6V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 3W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: MSOP8
Operating temperature: -40...85°C
Voltage supply range: 2.8...6V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 3W
Produkt ist nicht verfügbar
| PAM8304AYR |
|
Hersteller: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2.8...6V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 3W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; low noise,thermal protection; Ch: 1
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 1
Case: U-DFN3030-8
Operating temperature: -40...85°C
Voltage supply range: 2.8...6V DC
Integrated circuit features: low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Output power: 3W
Produkt ist nicht verfügbar
| MMBTA13-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1100+ | 0.066 EUR |
| 1275+ | 0.056 EUR |
| 1775+ | 0.04 EUR |
| MMBTA14-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
| MMBTA28-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Current gain: 10k
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Current gain: 10k
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
auf Bestellung 4725 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1350+ | 0.053 EUR |
| 1500+ | 0.048 EUR |
| 1950+ | 0.037 EUR |
| 2075+ | 0.035 EUR |
| SMAJ12CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 670+ | 0.11 EUR |
| 865+ | 0.083 EUR |
| 910+ | 0.079 EUR |
| 74LVC1G07SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Manufacturer series: LVC
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; LVC; 200uA
Mounting: SMD
Kind of package: reel; tape
Case: SOT353
Manufacturer series: LVC
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 200µA
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 2009 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 758+ | 0.094 EUR |
| 1389+ | 0.051 EUR |
| 1578+ | 0.045 EUR |
| 1813+ | 0.039 EUR |
| 1918+ | 0.037 EUR |
| ZXM61N03FTA | |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.1A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.1A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.1A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 196+ | 0.37 EUR |
| 326+ | 0.22 EUR |
| 344+ | 0.21 EUR |
| 1500+ | 0.2 EUR |
| ZVN0545A |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.09A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 0.09A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 50Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.09A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 0.09A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 50Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMGD7N45SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 850mA
Pulsed drain current: 2.2A
Power dissipation: 1.64W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 850mA; Idm: 2.2A; 1.64W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 850mA
Pulsed drain current: 2.2A
Power dissipation: 1.64W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| GBJ1506-F |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 240A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 240A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.63 EUR |
| 49+ | 1.47 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.1 EUR |
| B550C-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 5A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
auf Bestellung 2777 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 156+ | 0.46 EUR |
| 258+ | 0.28 EUR |
| 368+ | 0.19 EUR |
| 391+ | 0.18 EUR |
| BAT54JW-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Case: SOT363
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT363; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Case: SOT363
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Produkt ist nicht verfügbar
| AP2127K-1.0TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP2127K-1.2TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP2127K-1.5TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.5V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.5V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP2127K-1.8TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.8V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.8V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP2127K-2.5TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| AP2127K-2.8TRG1 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.4A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.4A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: AP2127
Integrated circuit features: shutdown mode control input
auf Bestellung 1055 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 605+ | 0.12 EUR |
| 685+ | 0.1 EUR |
| 755+ | 0.095 EUR |
| 800+ | 0.09 EUR |