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DMT6004SCT Diodes Incorporated
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Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 14149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.08 EUR |
50+ | 2.47 EUR |
100+ | 2.03 EUR |
500+ | 1.72 EUR |
1000+ | 1.46 EUR |
2000+ | 1.39 EUR |
5000+ | 1.33 EUR |
10000+ | 1.29 EUR |
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Technische Details DMT6004SCT Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V, Power Dissipation (Max): 2.3W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V.
Weitere Produktangebote DMT6004SCT
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMT6004SCT | Hersteller : Diodes Inc |
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DMT6004SCT | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB Kind of package: tube Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Gate charge: 95.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMT6004SCT | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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![]() |
DMT6004SCT | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB Kind of package: tube Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Gate charge: 95.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Mounting: THT Case: TO220AB |
Produkt ist nicht verfügbar |