DMT6006SPS-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 390A
Mounting: SMD
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 390A
Mounting: SMD
Case: PowerDI5060-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT6006SPS-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W, Kind of package: reel; tape, Drain-source voltage: 60V, Drain current: 13A, On-state resistance: 6.2mΩ, Type of transistor: N-MOSFET, Power dissipation: 2.45W, Polarisation: unipolar, Gate charge: 27.9nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 390A, Mounting: SMD, Case: PowerDI5060-8, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMT6006SPS-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
DMT6006SPS-13 | Hersteller : Diodes Incorporated | Description: MOSFET N-CH 60V PWRDI5060 |
Produkt ist nicht verfügbar |
||
DMT6006SPS-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |
||
DMT6006SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W Kind of package: reel; tape Drain-source voltage: 60V Drain current: 13A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 2.45W Polarisation: unipolar Gate charge: 27.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 390A Mounting: SMD Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |