ZXMN10A25GTA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 100V 2.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.85 EUR |
| 2000+ | 0.8 EUR |
| 5000+ | 0.76 EUR |
| 10000+ | 0.73 EUR |
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Technische Details ZXMN10A25GTA Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V.
Weitere Produktangebote ZXMN10A25GTA nach Preis ab 0.78 EUR bis 1.94 EUR
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ZXMN10A25GTA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.7A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 575 Stücke: Lieferzeit 7-14 Tag (e) |
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ZXMN10A25GTA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.7A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.7A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN10A25GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 2.9A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN10A25GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 2.9A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN10A25GTA | Hersteller : Diodes Incorporated |
MOSFET 100V N-Channel 2.9A MOSFET |
auf Bestellung 2776 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A25GTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 2.9A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V |
auf Bestellung 20480 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A25GTA | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 2.9A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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ZXMN10A25GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 2.9A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |