![ZXMP10A18GTA ZXMP10A18GTA](https://static6.arrow.com/aropdfconversion/arrowimages/9b7c043009bb1b14655b77288bf0ea697c495011/sot223.jpg)
ZXMP10A18GTA Diodes Zetex
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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1000+ | 1.25 EUR |
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Technische Details ZXMP10A18GTA Diodes Zetex
Description: MOSFET P-CH 100V 2.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V.
Weitere Produktangebote ZXMP10A18GTA nach Preis ab 1.21 EUR bis 2.97 EUR
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ZXMP10A18GTA | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A18GTA | Hersteller : Diodes Zetex |
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auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP10A18GTA | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -3A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 567 Stücke: Lieferzeit 7-14 Tag (e) |
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ZXMP10A18GTA | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -3A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 567 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP10A18GTA | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V |
auf Bestellung 22656 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A18GTA | Hersteller : Diodes Incorporated |
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auf Bestellung 22247 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP10A18GTA | Hersteller : Diodes Inc |
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auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP10A18GTA | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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ZXMP10A18GTA | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |