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BSD316SNH6327XTSA1 BSD316SNH6327XTSA1 INFINEON TECHNOLOGIES BSD316SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES BSD840NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.88A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5680 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
224+ 0.32 EUR
353+ 0.2 EUR
404+ 0.18 EUR
725+ 0.099 EUR
770+ 0.093 EUR
75000+ 0.092 EUR
Mindestbestellmenge: 173
BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 INFINEON TECHNOLOGIES BSF030NE2LQ-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSF035NE2LQXUMA1 BSF035NE2LQXUMA1 INFINEON TECHNOLOGIES BSF035NE2LQ-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W
Technology: OptiMOS™
Case: CanPAK™ SQ; MG-WDSON-2
Mounting: SMD
On-state resistance: 3.5mΩ
Power dissipation: 28W
Drain-source voltage: 25V
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET
Drain current: 69A
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 INFINEON TECHNOLOGIES BSF134N10NJ3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 28W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 28W
Case: CanPAK™ SJ; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 INFINEON TECHNOLOGIES BSF450NE7NH3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Case: CanPAK™ S; MG-WDSON-2
Mounting: SMD
Drain-source voltage: 75V
Drain current: 15A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSG0811NDATMA1 INFINEON TECHNOLOGIES Infineon-BSG0811ND-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c2d01f1490263 BSG0811NDATMA1 Multi channel transistors
Produkt ist nicht verfügbar
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 INFINEON TECHNOLOGIES BSL207SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Mounting: SMD
Case: PG-TSOP-6
On-state resistance: 41mΩ
Technology: OptiMOS™ P
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2867 Stücke:
Lieferzeit 7-14 Tag (e)
93+0.77 EUR
109+ 0.66 EUR
217+ 0.33 EUR
230+ 0.31 EUR
3000+ 0.3 EUR
Mindestbestellmenge: 93
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 INFINEON TECHNOLOGIES BSL211SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL214NH6327XTSA1 BSL214NH6327XTSA1 INFINEON TECHNOLOGIES BSL214NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Drain current: 1.5A
Power dissipation: 0.5W
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
On-state resistance: 0.25Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL215CH6327XTSA1 BSL215CH6327XTSA1 INFINEON TECHNOLOGIES BSL215CH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 0.173/0.25Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2391 Stücke:
Lieferzeit 7-14 Tag (e)
122+0.59 EUR
154+ 0.46 EUR
201+ 0.36 EUR
213+ 0.34 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 122
BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 INFINEON TECHNOLOGIES BSL296SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6
Mounting: SMD
Case: TSOP6
Features of semiconductor devices: ESD protected gate
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 1.4A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES BSL307SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Mounting: SMD
On-state resistance: 43mΩ
Drain current: -5.5A
Power dissipation: 2W
Drain-source voltage: -30V
Polarisation: unipolar
Case: PG-TSOP-6
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL308CH6327XTSA1 BSL308CH6327XTSA1 INFINEON TECHNOLOGIES BSL308CH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.3/-2A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 67/88mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
148+0.49 EUR
202+ 0.35 EUR
277+ 0.26 EUR
291+ 0.25 EUR
500+ 0.24 EUR
Mindestbestellmenge: 148
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 INFINEON TECHNOLOGIES BSL308PEH6327XTSA1-DTE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6
Type of transistor: P-MOSFET x2
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2072 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
153+ 0.47 EUR
182+ 0.39 EUR
192+ 0.37 EUR
226+ 0.32 EUR
239+ 0.3 EUR
400+ 0.29 EUR
Mindestbestellmenge: 143
BSL316CH6327XTSA1 BSL316CH6327XTSA1 INFINEON TECHNOLOGIES BSL316CH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1095 Stücke:
Lieferzeit 7-14 Tag (e)
215+0.33 EUR
327+ 0.22 EUR
424+ 0.17 EUR
451+ 0.16 EUR
Mindestbestellmenge: 215
BSL372SNH6327XTSA1 BSL372SNH6327XTSA1 INFINEON TECHNOLOGIES BSL372SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 INFINEON TECHNOLOGIES BSL606SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Mounting: SMD
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSOP-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1882 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
96+ 0.75 EUR
192+ 0.37 EUR
203+ 0.35 EUR
3000+ 0.34 EUR
Mindestbestellmenge: 65
BSL802SNH6327XTSA1 BSL802SNH6327XTSA1 INFINEON TECHNOLOGIES BSL802SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Technology: OptiMOS™ 2
Case: TSOP6
Mounting: SMD
On-state resistance: 31mΩ
Power dissipation: 2W
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSM200GB60DLC BSM200GB60DLC INFINEON TECHNOLOGIES BSM200GB60DLC.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 730W
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO033N03MSGXUMA1 BSO033N03MSGXUMA1 INFINEON TECHNOLOGIES BSO033N03MSG-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Drain current: 22A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: PG-DSO-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSO080P03SHXUMA1 BSO080P03SHXUMA1 INFINEON TECHNOLOGIES BSO080P03SHXUMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.79W
Type of transistor: P-MOSFET
On-state resistance: 8mΩ
Drain current: -12.6A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±25V
Drain-source voltage: -30V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 INFINEON TECHNOLOGIES BSO110N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Drain current: 12.1A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 INFINEON TECHNOLOGIES BSO150N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO201SPHXUMA1 BSO201SPHXUMA1 INFINEON TECHNOLOGIES BSO201SPH-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 20mΩ
Drain current: -12A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO203PHXUMA1 BSO203PHXUMA1 INFINEON TECHNOLOGIES BSO203PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSO203SPHXUMA1 BSO203SPHXUMA1 INFINEON TECHNOLOGIES BSO203SPHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES BSO207PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2214 Stücke:
Lieferzeit 7-14 Tag (e)
97+0.74 EUR
128+ 0.56 EUR
144+ 0.5 EUR
Mindestbestellmenge: 97
BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES BSO211PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2453 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
190+ 0.38 EUR
197+ 0.36 EUR
Mindestbestellmenge: 173
BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 22mΩ
Drain current: 7.7A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO301SPHXUMA1 BSO301SPHXUMA1 INFINEON TECHNOLOGIES BSO301SPHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.79W
Type of transistor: P-MOSFET
On-state resistance: 8mΩ
Drain current: -12.6A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Case: PG-DSO-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSO303SPHXUMA1 BSO303SPHXUMA1 INFINEON TECHNOLOGIES BSO303SPHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7.2A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO613SPVGXUMA1 BSO613SPVGXUMA1 INFINEON TECHNOLOGIES Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: P-MOSFET
On-state resistance: 0.13Ω
Drain current: -3.44A
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP125H6327XTSA1 BSP125H6327XTSA1 INFINEON TECHNOLOGIES BSP125H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1133 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
88+ 0.81 EUR
153+ 0.47 EUR
162+ 0.44 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 74
BSP129H6327XTSA1 BSP129H6327XTSA1 INFINEON TECHNOLOGIES BSP129H6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depleted
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1970 Stücke:
Lieferzeit 7-14 Tag (e)
68+1.06 EUR
115+ 0.63 EUR
147+ 0.49 EUR
156+ 0.46 EUR
500+ 0.45 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 68
BSP129H6906XTSA1 BSP129H6906XTSA1 INFINEON TECHNOLOGIES BSP129H6906XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: depleted
Anzahl je Verpackung: 1 Stücke
auf Bestellung 109 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
106+ 0.68 EUR
109+ 0.66 EUR
250+ 0.57 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 76
BSP135H6327XTSA1 BSP135H6327XTSA1 INFINEON TECHNOLOGIES BSP135H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depleted
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1683 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.56 EUR
71+ 1.02 EUR
107+ 0.67 EUR
113+ 0.63 EUR
Mindestbestellmenge: 46
BSP149H6327XTSA1 BSP149H6327XTSA1 INFINEON TECHNOLOGIES BSP149H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2049 Stücke:
Lieferzeit 7-14 Tag (e)
57+1.26 EUR
69+ 1.04 EUR
111+ 0.64 EUR
118+ 0.61 EUR
1000+ 0.6 EUR
10000+ 0.58 EUR
Mindestbestellmenge: 57
BSP149H6906XTSA1 BSP149H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
BSP170PH6327XTSA1 BSP170PH6327XTSA1 INFINEON TECHNOLOGIES BSP170PH6327XTSA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3330 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
93+ 0.78 EUR
106+ 0.68 EUR
182+ 0.39 EUR
192+ 0.37 EUR
3000+ 0.36 EUR
Mindestbestellmenge: 76
BSP171PH6327XTSA1 BSP171PH6327XTSA1 INFINEON TECHNOLOGIES BSP171PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2001 Stücke:
Lieferzeit 7-14 Tag (e)
79+0.92 EUR
184+ 0.39 EUR
195+ 0.37 EUR
5000+ 0.36 EUR
Mindestbestellmenge: 79
BSP295H6327XTSA1 BSP295H6327XTSA1 INFINEON TECHNOLOGIES BSP295H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 1.8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES BSP296NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 1.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1093 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.23 EUR
112+ 0.64 EUR
141+ 0.51 EUR
164+ 0.44 EUR
166+ 0.43 EUR
174+ 0.41 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 59
BSP297H6327XTSA1 BSP297H6327XTSA1 INFINEON TECHNOLOGIES BSP297H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 200V
Drain current: 0.66A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1002 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
80+ 0.9 EUR
93+ 0.78 EUR
162+ 0.44 EUR
171+ 0.42 EUR
10000+ 0.4 EUR
Mindestbestellmenge: 69
BSP315PH6327XTSA1 BSP315PH6327XTSA1 INFINEON TECHNOLOGIES BSP315PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2392 Stücke:
Lieferzeit 7-14 Tag (e)
79+0.92 EUR
94+ 0.77 EUR
211+ 0.34 EUR
224+ 0.32 EUR
10000+ 0.31 EUR
Mindestbestellmenge: 79
BSP316PH6327XTSA1 BSP316PH6327XTSA1 INFINEON TECHNOLOGIES BSP316PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-SOT223
Drain-source voltage: -100V
Drain current: -680mA
On-state resistance: 1.8Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP317PH6327XTSA1 BSP317PH6327XTSA1 INFINEON TECHNOLOGIES BSP317PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)
73+0.99 EUR
147+ 0.49 EUR
2000+ 0.4 EUR
Mindestbestellmenge: 73
BSP321PH6327XTSA1 BSP321PH6327XTSA1 INFINEON TECHNOLOGIES BSP321PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.79A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.79A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP322PH6327XTSA1 BSP322PH6327XTSA1 INFINEON TECHNOLOGIES BSP322PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.15 EUR
104+ 0.69 EUR
115+ 0.62 EUR
157+ 0.46 EUR
167+ 0.43 EUR
Mindestbestellmenge: 63
BSP324H6327XTSA1 BSP324H6327XTSA1 INFINEON TECHNOLOGIES BSP324H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Power dissipation: 1.8W
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
80+0.9 EUR
96+ 0.75 EUR
155+ 0.46 EUR
164+ 0.44 EUR
500+ 0.42 EUR
Mindestbestellmenge: 80
BSP372NH6327XTSA1 BSP372NH6327XTSA1 INFINEON TECHNOLOGIES BSP372NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1040 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
82+ 0.87 EUR
92+ 0.78 EUR
140+ 0.51 EUR
148+ 0.48 EUR
500+ 0.47 EUR
Mindestbestellmenge: 70
BSP373NH6327XTSA1 BSP373NH6327XTSA1 INFINEON TECHNOLOGIES BSP373NH6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1057 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.56 EUR
97+ 0.74 EUR
106+ 0.67 EUR
139+ 0.52 EUR
146+ 0.49 EUR
5000+ 0.48 EUR
Mindestbestellmenge: 46
BSP452 INFINEON TECHNOLOGIES BSP452 Power switches - integrated circuits
auf Bestellung 5151 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.66 EUR
37+ 1.94 EUR
39+ 1.84 EUR
Mindestbestellmenge: 27
BSP50H6327XTSA1 BSP50H6327XTSA1 INFINEON TECHNOLOGIES BSP50H6327XTSA1.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP603S2L BSP603S2L INFINEON TECHNOLOGIES BSP603S2L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
BSP60H6327XTSA1 BSP60H6327XTSA1 INFINEON TECHNOLOGIES BSP60H6327XTSA1.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Mounting: SMD
Case: SOT223
Collector current: 1A
Type of transistor: PNP
Power dissipation: 1.5W
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 200MHz
Collector-emitter voltage: 45V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP613PH6327XTSA1 BSP613PH6327XTSA1 INFINEON TECHNOLOGIES BSP613PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 466 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.44 EUR
61+ 1.17 EUR
87+ 0.83 EUR
92+ 0.78 EUR
500+ 0.75 EUR
Mindestbestellmenge: 50
BSP61H6327XTSA1 BSP61H6327XTSA1 INFINEON TECHNOLOGIES BSP61H6327XTSA1.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP742R INFINEON TECHNOLOGIES BSP742R Power switches - integrated circuits
Produkt ist nicht verfügbar
BSP742RIXUMA1 BSP742RIXUMA1 INFINEON TECHNOLOGIES Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSD316SNH6327XTSA1 BSD316SNH6327XTSA1.pdf
BSD316SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSD840NH6327XTSA1 BSD840NH6327XTSA1.pdf
BSD840NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.88A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5680 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
224+ 0.32 EUR
353+ 0.2 EUR
404+ 0.18 EUR
725+ 0.099 EUR
770+ 0.093 EUR
75000+ 0.092 EUR
Mindestbestellmenge: 173
BSF030NE2LQXUMA1 BSF030NE2LQ-DTE.pdf
BSF030NE2LQXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSF035NE2LQXUMA1 BSF035NE2LQ-DTE.pdf
BSF035NE2LQXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W
Technology: OptiMOS™
Case: CanPAK™ SQ; MG-WDSON-2
Mounting: SMD
On-state resistance: 3.5mΩ
Power dissipation: 28W
Drain-source voltage: 25V
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Type of transistor: N-MOSFET
Drain current: 69A
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSF134N10NJ3GXUMA1 BSF134N10NJ3G-DTE.pdf
BSF134N10NJ3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 28W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 28W
Case: CanPAK™ SJ; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSF450NE7NH3XUMA1 BSF450NE7NH3-DTE.pdf
BSF450NE7NH3XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Case: CanPAK™ S; MG-WDSON-2
Mounting: SMD
Drain-source voltage: 75V
Drain current: 15A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSG0811NDATMA1 Infineon-BSG0811ND-DS-v02_00-EN.pdf?fileId=5546d4624bcaebcf014c2d01f1490263
Hersteller: INFINEON TECHNOLOGIES
BSG0811NDATMA1 Multi channel transistors
Produkt ist nicht verfügbar
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1-DTE.pdf
BSL207SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Mounting: SMD
Case: PG-TSOP-6
On-state resistance: 41mΩ
Technology: OptiMOS™ P
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2867 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
93+0.77 EUR
109+ 0.66 EUR
217+ 0.33 EUR
230+ 0.31 EUR
3000+ 0.3 EUR
Mindestbestellmenge: 93
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1-dte.pdf
BSL211SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL214NH6327XTSA1 BSL214NH6327XTSA1.pdf
BSL214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Drain current: 1.5A
Power dissipation: 0.5W
Polarisation: unipolar
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
On-state resistance: 0.25Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL215CH6327XTSA1 BSL215CH6327XTSA1.pdf
BSL215CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 0.173/0.25Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2391 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
122+0.59 EUR
154+ 0.46 EUR
201+ 0.36 EUR
213+ 0.34 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 122
BSL296SNH6327XTSA1 BSL296SNH6327XTSA1.pdf
BSL296SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6
Mounting: SMD
Case: TSOP6
Features of semiconductor devices: ESD protected gate
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 1.4A
On-state resistance: 0.56Ω
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1-DTE.pdf
BSL307SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Mounting: SMD
On-state resistance: 43mΩ
Drain current: -5.5A
Power dissipation: 2W
Drain-source voltage: -30V
Polarisation: unipolar
Case: PG-TSOP-6
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL308CH6327XTSA1 BSL308CH6327XTSA1.pdf
BSL308CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.3/-2A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 67/88mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
148+0.49 EUR
202+ 0.35 EUR
277+ 0.26 EUR
291+ 0.25 EUR
500+ 0.24 EUR
Mindestbestellmenge: 148
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1-DTE.pdf
BSL308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6
Type of transistor: P-MOSFET x2
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2072 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
153+ 0.47 EUR
182+ 0.39 EUR
192+ 0.37 EUR
226+ 0.32 EUR
239+ 0.3 EUR
400+ 0.29 EUR
Mindestbestellmenge: 143
BSL316CH6327XTSA1 BSL316CH6327XTSA1.pdf
BSL316CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1095 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
215+0.33 EUR
327+ 0.22 EUR
424+ 0.17 EUR
451+ 0.16 EUR
Mindestbestellmenge: 215
BSL372SNH6327XTSA1 BSL372SNH6327XTSA1.pdf
BSL372SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1.pdf
BSL606SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Mounting: SMD
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSOP-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1882 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.1 EUR
96+ 0.75 EUR
192+ 0.37 EUR
203+ 0.35 EUR
3000+ 0.34 EUR
Mindestbestellmenge: 65
BSL802SNH6327XTSA1 BSL802SNH6327XTSA1.pdf
BSL802SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
Technology: OptiMOS™ 2
Case: TSOP6
Mounting: SMD
On-state resistance: 31mΩ
Power dissipation: 2W
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSM200GB60DLC BSM200GB60DLC.pdf
BSM200GB60DLC
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 730W
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO033N03MSGXUMA1 BSO033N03MSG-dte.pdf
BSO033N03MSGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 3.8mΩ
Drain current: 22A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: PG-DSO-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSO080P03SHXUMA1 BSO080P03SHXUMA1-DTE.PDF
BSO080P03SHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.79W
Type of transistor: P-MOSFET
On-state resistance: 8mΩ
Drain current: -12.6A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±25V
Drain-source voltage: -30V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO110N03MSGXUMA1 BSO110N03MSG-DTE.pdf
BSO110N03MSGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Drain current: 12.1A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO150N03MDGXUMA1 BSO150N03MDG-DTE.pdf
BSO150N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO201SPHXUMA1 BSO201SPH-DTE.pdf
BSO201SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 20mΩ
Drain current: -12A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO203PHXUMA1 BSO203PHXUMA1-dte.pdf
BSO203PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSO203SPHXUMA1 BSO203SPHXUMA1-dte.pdf
BSO203SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Case: PG-DSO-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSO207PHXUMA1 BSO207PHXUMA1-dte.pdf
BSO207PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2214 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
97+0.74 EUR
128+ 0.56 EUR
144+ 0.5 EUR
Mindestbestellmenge: 97
BSO211PHXUMA1 BSO211PHXUMA1-dte.pdf
BSO211PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2453 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
190+ 0.38 EUR
197+ 0.36 EUR
Mindestbestellmenge: 173
BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 22mΩ
Drain current: 7.7A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO301SPHXUMA1 BSO301SPHXUMA1-dte.pdf
BSO301SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.79W
Type of transistor: P-MOSFET
On-state resistance: 8mΩ
Drain current: -12.6A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Case: PG-DSO-8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BSO303SPHXUMA1 BSO303SPHXUMA1-dte.pdf
BSO303SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: P-MOSFET
On-state resistance: 21mΩ
Drain current: -7.2A
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Case: PG-DSO-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSO613SPVGXUMA1 Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c
BSO613SPVGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: P-MOSFET
On-state resistance: 0.13Ω
Drain current: -3.44A
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Case: SO8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP125H6327XTSA1 BSP125H6327XTSA1.pdf
BSP125H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1133 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
88+ 0.81 EUR
153+ 0.47 EUR
162+ 0.44 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 74
BSP129H6327XTSA1 BSP129H6327-DTE.pdf
BSP129H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depleted
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1970 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
115+ 0.63 EUR
147+ 0.49 EUR
156+ 0.46 EUR
500+ 0.45 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 68
BSP129H6906XTSA1 BSP129H6906XTSA1.pdf
BSP129H6906XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: depleted
Anzahl je Verpackung: 1 Stücke
auf Bestellung 109 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
106+ 0.68 EUR
109+ 0.66 EUR
250+ 0.57 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 76
BSP135H6327XTSA1 BSP135H6327XTSA1.pdf
BSP135H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depleted
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1683 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
71+ 1.02 EUR
107+ 0.67 EUR
113+ 0.63 EUR
Mindestbestellmenge: 46
BSP149H6327XTSA1 BSP149H6327XTSA1.pdf
BSP149H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2049 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
57+1.26 EUR
69+ 1.04 EUR
111+ 0.64 EUR
118+ 0.61 EUR
1000+ 0.6 EUR
10000+ 0.58 EUR
Mindestbestellmenge: 57
BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
BSP170PH6327XTSA1 BSP170PH6327XTSA1-DTE.PDF
BSP170PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3330 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
93+ 0.78 EUR
106+ 0.68 EUR
182+ 0.39 EUR
192+ 0.37 EUR
3000+ 0.36 EUR
Mindestbestellmenge: 76
BSP171PH6327XTSA1 BSP171PH6327XTSA1-dte.pdf
BSP171PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2001 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
79+0.92 EUR
184+ 0.39 EUR
195+ 0.37 EUR
5000+ 0.36 EUR
Mindestbestellmenge: 79
BSP295H6327XTSA1 BSP295H6327XTSA1.pdf
BSP295H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 1.8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP296NH6327XTSA1 BSP296NH6327XTSA1.pdf
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Case: SOT223
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 1.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1093 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.23 EUR
112+ 0.64 EUR
141+ 0.51 EUR
164+ 0.44 EUR
166+ 0.43 EUR
174+ 0.41 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 59
BSP297H6327XTSA1 BSP297H6327XTSA1.pdf
BSP297H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 200V
Drain current: 0.66A
On-state resistance: 1.8Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1002 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
80+ 0.9 EUR
93+ 0.78 EUR
162+ 0.44 EUR
171+ 0.42 EUR
10000+ 0.4 EUR
Mindestbestellmenge: 69
BSP315PH6327XTSA1 BSP315PH6327XTSA1-dte.pdf
BSP315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2392 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
79+0.92 EUR
94+ 0.77 EUR
211+ 0.34 EUR
224+ 0.32 EUR
10000+ 0.31 EUR
Mindestbestellmenge: 79
BSP316PH6327XTSA1 BSP316PH6327XTSA1-dte.pdf
BSP316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-SOT223
Drain-source voltage: -100V
Drain current: -680mA
On-state resistance: 1.8Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP317PH6327XTSA1 BSP317PH6327XTSA1-dte.pdf
BSP317PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
73+0.99 EUR
147+ 0.49 EUR
2000+ 0.4 EUR
Mindestbestellmenge: 73
BSP321PH6327XTSA1 BSP321PH6327XTSA1.pdf
BSP321PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.79A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.79A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP322PH6327XTSA1 BSP322PH6327XTSA1-dte.pdf
BSP322PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
63+1.15 EUR
104+ 0.69 EUR
115+ 0.62 EUR
157+ 0.46 EUR
167+ 0.43 EUR
Mindestbestellmenge: 63
BSP324H6327XTSA1 BSP324H6327XTSA1.pdf
BSP324H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Power dissipation: 1.8W
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
80+0.9 EUR
96+ 0.75 EUR
155+ 0.46 EUR
164+ 0.44 EUR
500+ 0.42 EUR
Mindestbestellmenge: 80
BSP372NH6327XTSA1 BSP372NH6327XTSA1.pdf
BSP372NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1040 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
82+ 0.87 EUR
92+ 0.78 EUR
140+ 0.51 EUR
148+ 0.48 EUR
500+ 0.47 EUR
Mindestbestellmenge: 70
BSP373NH6327XTSA1 BSP373NH6327-DTE.pdf
BSP373NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1057 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
97+ 0.74 EUR
106+ 0.67 EUR
139+ 0.52 EUR
146+ 0.49 EUR
5000+ 0.48 EUR
Mindestbestellmenge: 46
BSP452
Hersteller: INFINEON TECHNOLOGIES
BSP452 Power switches - integrated circuits
auf Bestellung 5151 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.66 EUR
37+ 1.94 EUR
39+ 1.84 EUR
Mindestbestellmenge: 27
BSP50H6327XTSA1 BSP50H6327XTSA1.pdf
BSP50H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP603S2L BSP603S2L.pdf
BSP603S2L
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
BSP60H6327XTSA1 BSP60H6327XTSA1.pdf
BSP60H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Mounting: SMD
Case: SOT223
Collector current: 1A
Type of transistor: PNP
Power dissipation: 1.5W
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 200MHz
Collector-emitter voltage: 45V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP613PH6327XTSA1 BSP613PH6327XTSA1-dte.pdf
BSP613PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 466 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.44 EUR
61+ 1.17 EUR
87+ 0.83 EUR
92+ 0.78 EUR
500+ 0.75 EUR
Mindestbestellmenge: 50
BSP61H6327XTSA1 BSP61H6327XTSA1.pdf
BSP61H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSP742R
Hersteller: INFINEON TECHNOLOGIES
BSP742R Power switches - integrated circuits
Produkt ist nicht verfügbar
BSP742RIXUMA1 Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t
BSP742RIXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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