Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (139455) > Seite 1208 nach 2325
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BSZ028N04LSATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
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BSZ035N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ035N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.5mΩ Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| BSZ036NE2LSATMA1 | INFINEON TECHNOLOGIES |
BSZ036NE2LSATMA1 SMD N channel transistors |
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BSZ040N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3354 Stücke: Lieferzeit 7-14 Tag (e) |
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BSZ042N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BSZ0506NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 27W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ050N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ050N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ058N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
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BSZ065N03LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 26W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
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BSZ067N06LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ068N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 46W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BSZ075N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| BSZ084N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 63W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ086P03NS3EGATMA | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8 Technology: OptiMOS™ P3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 69W Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V Kind of channel: enhanced Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 8.6mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ086P03NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8 Technology: OptiMOS™ P3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 52W Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V Kind of channel: enhanced Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 8.6mΩ Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ088N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 35W Polarisation: unipolar Drain current: 40A Drain-source voltage: 30V Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.8mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ088N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 35W Polarisation: unipolar Drain current: 40A Drain-source voltage: 30V Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.8mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ0901NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ0901NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ0902NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ0902NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| BSZ0909NSATMA1 | INFINEON TECHNOLOGIES |
BSZ0909NSATMA1 SMD N channel transistors |
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| BSZ096N10LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 160A Power dissipation: 69W Case: PG-TSDSON-8FL Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ097N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8 Drain-source voltage: 40V Drain current: 40A On-state resistance: 9.7mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4954 Stücke: Lieferzeit 7-14 Tag (e) |
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BSZ097N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ0994NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.1W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 5.2nC Kind of channel: enhanced |
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BSZ099N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 29A Power dissipation: 36W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 9.9mΩ Mounting: SMD Gate charge: 6.9nC Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
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BSZ100N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ100N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ100N06LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
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BSZ100N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 36W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ105N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 29A Power dissipation: 35W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| BSZ110N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8 Drain-source voltage: 60V Drain current: 20A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PG-TSDSON-8 Anzahl je Verpackung: 5000 Stücke |
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BSZ110N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8 Drain-source voltage: 80V Drain current: 40A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 Anzahl je Verpackung: 1 Stücke |
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BSZ120P03NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Power dissipation: 52W Case: PG-TSDSON-8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
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BSZ123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Case: PG-TSDSON-8 Power dissipation: 66W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 40A On-state resistance: 12.3mΩ Anzahl je Verpackung: 5000 Stücke |
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BSZ12DN20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 200V Drain current: 11.3A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ130N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8 Power dissipation: 25W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 30V Drain current: 28A On-state resistance: 13mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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BSZ130N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8 Power dissipation: 25W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 30V Drain current: 31A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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BSZ150N10LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 63W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ15DC02KDHXTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W Type of transistor: N/P-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 5.1/-3.2A Power dissipation: 2.5W Case: PG-TSDSON-8 Gate-source voltage: ±12V On-state resistance: 63/164mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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BSZ160N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 63W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ16DN25NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 10.9A Power dissipation: 62.5W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ180P03NS3EGATMA | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 40W Technology: OptiMOS™ P3 Gate-source voltage: ±25V Kind of channel: enhanced Drain-source voltage: -30V Drain current: -39.6A On-state resistance: 18mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ180P03NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 40W Technology: OptiMOS™ P3 Gate-source voltage: ±25V Kind of channel: enhanced Drain-source voltage: -30V Drain current: -39.6A On-state resistance: 40mΩ Type of transistor: P-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BSZ22DN20NS3GATMA1 | INFINEON TECHNOLOGIES |
BSZ22DN20NS3GATMA1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| BSZ240N12NS3GATMA1 | INFINEON TECHNOLOGIES |
BSZ240N12NS3GATMA1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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BSZ340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSZ42DN25NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 250V Drain current: 5A On-state resistance: 0.425Ω Type of transistor: N-MOSFET Power dissipation: 33.8W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ440N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 29W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2915 Stücke: Lieferzeit 7-14 Tag (e) |
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BSZ520N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 150V Drain current: 21A On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSZ900N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 13A Power dissipation: 38W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4060 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSZ900N20NS3GATMA1 | INFINEON TECHNOLOGIES |
BSZ900N20NS3GATMA1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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| BTF3035EJXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31 Operating temperature: -40...150°C Mounting: SMD Kind of package: reel; tape Power dissipation: 1.75W Technology: HITFET® Kind of integrated circuit: low-side Case: PG-TDSO-8-31 Supply voltage: 3...5.5V DC On-state resistance: 32mΩ Turn-on time: 1.35µs Turn-off time: 2µs Output voltage: 40V Output current: 5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BTF3050EJXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31 Technology: HITFET® Power dissipation: 1.6W Case: PG-TDSO-8-31 On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Turn-on time: 1.35µs Turn-off time: 2µs Output current: 4A Operating temperature: -40...150°C Supply voltage: 3...5.5V DC Output voltage: 40V Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of integrated circuit: low-side Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BTF3080EJXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31 Technology: HITFET® Power dissipation: 1.44W Case: PG-TDSO-8-31 On-state resistance: 71mΩ Mounting: SMD Kind of package: reel; tape Turn-on time: 1.35µs Turn-off time: 2µs Output current: 3A Operating temperature: -40...150°C Supply voltage: 3...5.5V DC Output voltage: 40V Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of integrated circuit: low-side Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BTF3125EJXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31 Technology: HITFET® Power dissipation: 1W Case: PG-TDSO-8-31 On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Turn-on time: 1.35µs Turn-off time: 2µs Output current: 2A Operating temperature: -40...150°C Supply voltage: 3...5.5V DC Output voltage: 40V Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of integrated circuit: low-side Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| BSZ028N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ034N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ035N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ035N03MSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ036NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSZ036NE2LSATMA1 SMD N channel transistors
BSZ036NE2LSATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
| BSZ040N04LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3354 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.52 EUR |
| 57+ | 1.26 EUR |
| 93+ | 0.78 EUR |
| 98+ | 0.74 EUR |
| 100+ | 0.73 EUR |
| 1000+ | 0.72 EUR |
| 5000+ | 0.71 EUR |
| BSZ042N06NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ0506NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ050N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ050N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ058N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ065N03LSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ067N06LS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ068N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ075N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ084N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ086P03NS3EGATMA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ086P03NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 5000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ088N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ088N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ0901NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ0901NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ0902NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ0902NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ0909NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
BSZ0909NSATMA1 SMD N channel transistors
BSZ0909NSATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
| BSZ096N10LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 160A
Power dissipation: 69W
Case: PG-TSDSON-8FL
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 160A
Power dissipation: 69W
Case: PG-TSDSON-8FL
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ097N04LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4954 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 145+ | 0.49 EUR |
| 154+ | 0.47 EUR |
| 2000+ | 0.45 EUR |
| BSZ097N10NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ0994NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.1W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.1W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSZ099N06LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ100N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ100N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ100N06LS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ100N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ105N04NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ110N06NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TSDSON-8
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TSDSON-8
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ110N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ120P03NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ123N08NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 12.3mΩ
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 12.3mΩ
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ12DN20NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11.3A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11.3A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ130N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Power dissipation: 25W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 28A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Power dissipation: 25W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 28A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ130N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Power dissipation: 25W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 31A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Power dissipation: 25W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 31A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ150N10LS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ15DC02KDHXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.1/-3.2A
Power dissipation: 2.5W
Case: PG-TSDSON-8
Gate-source voltage: ±12V
On-state resistance: 63/164mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.1/-3.2A
Power dissipation: 2.5W
Case: PG-TSDSON-8
Gate-source voltage: ±12V
On-state resistance: 63/164mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ160N10NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ16DN25NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.9A
Power dissipation: 62.5W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.9A
Power dissipation: 62.5W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ180P03NS3EGATMA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 40W
Technology: OptiMOS™ P3
Gate-source voltage: ±25V
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 5000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 40W
Technology: OptiMOS™ P3
Gate-source voltage: ±25V
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ180P03NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 40W
Technology: OptiMOS™ P3
Gate-source voltage: ±25V
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 40W
Technology: OptiMOS™ P3
Gate-source voltage: ±25V
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ22DN20NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
BSZ22DN20NS3GATMA1 SMD N channel transistors
BSZ22DN20NS3GATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
| BSZ240N12NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
BSZ240N12NS3GATMA1 SMD N channel transistors
BSZ240N12NS3GATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
| BSZ340N08NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSZ42DN25NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 250V
Drain current: 5A
On-state resistance: 0.425Ω
Type of transistor: N-MOSFET
Power dissipation: 33.8W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 250V
Drain current: 5A
On-state resistance: 0.425Ω
Type of transistor: N-MOSFET
Power dissipation: 33.8W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ440N10NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2915 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.84 EUR |
| 68+ | 1.05 EUR |
| 96+ | 0.75 EUR |
| 102+ | 0.71 EUR |
| 1000+ | 0.68 EUR |
| BSZ520N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSZ900N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Power dissipation: 38W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Power dissipation: 38W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4060 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.15 EUR |
| 76+ | 0.95 EUR |
| 105+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| BSZ900N20NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
BSZ900N20NS3GATMA1 SMD N channel transistors
BSZ900N20NS3GATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
| BTF3035EJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-TDSO-8-31
Supply voltage: 3...5.5V DC
On-state resistance: 32mΩ
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-TDSO-8-31
Supply voltage: 3...5.5V DC
On-state resistance: 32mΩ
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BTF3050EJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Technology: HITFET®
Power dissipation: 1.6W
Case: PG-TDSO-8-31
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 1.35µs
Turn-off time: 2µs
Output current: 4A
Operating temperature: -40...150°C
Supply voltage: 3...5.5V DC
Output voltage: 40V
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Technology: HITFET®
Power dissipation: 1.6W
Case: PG-TDSO-8-31
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 1.35µs
Turn-off time: 2µs
Output current: 4A
Operating temperature: -40...150°C
Supply voltage: 3...5.5V DC
Output voltage: 40V
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BTF3080EJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Technology: HITFET®
Power dissipation: 1.44W
Case: PG-TDSO-8-31
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 1.35µs
Turn-off time: 2µs
Output current: 3A
Operating temperature: -40...150°C
Supply voltage: 3...5.5V DC
Output voltage: 40V
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Technology: HITFET®
Power dissipation: 1.44W
Case: PG-TDSO-8-31
On-state resistance: 71mΩ
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 1.35µs
Turn-off time: 2µs
Output current: 3A
Operating temperature: -40...150°C
Supply voltage: 3...5.5V DC
Output voltage: 40V
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BTF3125EJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Technology: HITFET®
Power dissipation: 1W
Case: PG-TDSO-8-31
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 1.35µs
Turn-off time: 2µs
Output current: 2A
Operating temperature: -40...150°C
Supply voltage: 3...5.5V DC
Output voltage: 40V
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Technology: HITFET®
Power dissipation: 1W
Case: PG-TDSO-8-31
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 1.35µs
Turn-off time: 2µs
Output current: 2A
Operating temperature: -40...150°C
Supply voltage: 3...5.5V DC
Output voltage: 40V
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar