auf Bestellung 4670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.54 EUR |
10+ | 1.34 EUR |
100+ | 0.92 EUR |
500+ | 0.77 EUR |
1000+ | 0.59 EUR |
2500+ | 0.58 EUR |
5000+ | 0.55 EUR |
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Technische Details BSZ0994NSATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 13A 8TSDSON-25, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TSDSON-8-25, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V.
Weitere Produktangebote BSZ0994NSATMA1 nach Preis ab 0.61 EUR bis 2.24 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BSZ0994NSATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8TSDSON-25 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-25 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V |
auf Bestellung 4978 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ0994NSATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 13A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ0994NSATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 13A 8-Pin TSDSON EP T/R |
Produkt ist nicht verfügbar |
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BSZ0994NSATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.1W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 5.2nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BSZ0994NSATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8TSDSON-25 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-25 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSZ0994NSATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.1W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 5.2nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |