Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (139456) > Seite 1212 nach 2325
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FF450R06ME3 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Case: AG-ECONOD-3 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 1.25kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Anzahl je Verpackung: 1 Stücke |
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| FF450R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.4kW Anzahl je Verpackung: 1 Stücke |
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| FF450R12KT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.4kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FF450R33T3E3B5BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Case: AG-XHP100-6 Max. off-state voltage: 3.3kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: XHP™3 Topology: IGBT half-bridge Anzahl je Verpackung: 1 Stücke |
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FF45MR12W1M1B11BOMA1 | INFINEON TECHNOLOGIES |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A Case: AG-EASY1BM-2 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-Fit Polarisation: unipolar On-state resistance: 45mΩ Pulsed drain current: 50A Technology: CoolSiC™; SiC Gate-source voltage: -10...20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| FF500R17KE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A Type of module: IGBT Case: AG-62MM-1 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 500A Pulsed collector current: 1kA Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Anzahl je Verpackung: 1 Stücke |
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| FF900R12IE4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Mechanical mounting: screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Power dissipation: 5.1kW Electrical mounting: screw Type of module: IGBT Case: AG-PRIME2-1 Technology: PrimePACK™ 2 Topology: IGBT half-bridge; NTC thermistor Anzahl je Verpackung: 1 Stücke |
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| FF900R12ME7B11BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Mechanical mounting: screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Electrical mounting: Press-Fit; screw Type of module: IGBT Case: AG-ECONOD-5 Technology: TRENCHSTOP™ Topology: IGBT half-bridge; NTC thermistor Anzahl je Verpackung: 6 Stücke |
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FP06R12W1T4B3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 12A Power dissipation: 94W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| FP100R12KT4B11BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: AG-ECONO3-3 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 515W Technology: EconoPIM™ 3 Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| FP10R12W1T7B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A Collector current: 10A Pulsed collector current: 20A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Case: AG-EASY1B-2 Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Anzahl je Verpackung: 1 Stücke |
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FP15R12W1T4_B3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A Case: AG-EASY1B-1 Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Pulsed collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 130W Anzahl je Verpackung: 1 Stücke |
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FP20R06W1E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A Technology: EasyPIM™ 1B Collector current: 20A Power dissipation: 94W Case: AG-EASY1B-2 Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Application: frequency changer; Inverter Electrical mounting: Press-in PCB Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
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| FP25R12W1T7B11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: AG-EASY1B-2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 50A Technology: EasyPIM™ 1B Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| FP30R06KE3BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A Case: AG-ECONO2C Application: frequency changer; Inverter Power dissipation: 125W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 60A Anzahl je Verpackung: 1 Stücke |
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FP40R12KE3 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: AG-ECONO2-5 Application: frequency changer; Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Power dissipation: 200W Technology: EconoPIM™ 2 Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FP40R12KT3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: AG-ECONO2-5 Application: frequency changer; Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Power dissipation: 210W Technology: EconoPIM™ 2 Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 175W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FP50R12KT3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: AG-ECONO3-3 Application: frequency changer; Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 280W Technology: EconoPIM™ 2 Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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FP75R12KT4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Technology: EconoPIM™ 3 Case: AG-ECONO3-3 Application: frequency changer; Inverter Power dissipation: 385W Collector current: 75A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Pulsed collector current: 150A Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| FS100R12W2T7B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Case: AG-EASY2B-2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FS10R12VT3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT three-phase bridge Case: AG-EASY750-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W Anzahl je Verpackung: 40 Stücke |
Produkt ist nicht verfügbar |
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| FS150R12KT4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-ECONO3-4 Power dissipation: 750W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-ECONO4-1 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FS15R12VT3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Power dissipation: 86W Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT three-phase bridge Case: AG-EASY750-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 30A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FS200R12KT4RB11BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-ECONO3-4 Electrical mounting: Press-in PCB Mechanical mounting: screw Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Type of module: IGBT Power dissipation: 1kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FS20R06VE3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A Technology: EasyPACK™ Collector current: 20A Power dissipation: 71.5W Case: AG-EASY750-1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: Inverter Electrical mounting: Press-in PCB Topology: IGBT half-bridge x3 Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FS50R12KE3BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 50A; 270W Application: Inverter Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 270W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 2 Case: AG-ECONO2B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FS75R12W2T4B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-EASY2B-2 Power dissipation: 375W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FS75R17KE3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 465W Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| FS820R08A6P2LBBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W Max. off-state voltage: 750V Case: AG-HYBRIDD-1 Semiconductor structure: transistor/transistor Mechanical mounting: screw Application: Inverter Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 1.64kA Power dissipation: 714W Electrical mounting: Press-in PCB Technology: HybridPACK™ Topology: IGBT half-bridge x3; NTC thermistor Type of module: IGBT Anzahl je Verpackung: 6 Stücke |
Produkt ist nicht verfügbar |
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| FZ1000R33HE3BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw Gate-emitter voltage: ±20V Collector current: 1kA Pulsed collector current: 2kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: TRENCHSTOP™ Case: AG-IHVB130-3 Max. off-state voltage: 3.3kV Semiconductor structure: transistor/transistor Anzahl je Verpackung: 2 Stücke |
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| FZ1400R33HE4BPSA1 | INFINEON TECHNOLOGIES |
FZ1400R33HE4BPSA1 IGBT modules |
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| FZ2000R33HE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3 Max. off-state voltage: 3.3kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2kA Pulsed collector current: 4kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: TRENCHSTOP™ Topology: IGBT x3 Case: AG-IHVB190-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FZ400R12KS4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Power dissipation: 2.5kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FZ400R17KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES Type of module: IGBT Semiconductor structure: single transistor Case: AG-62MMES Electrical mounting: screw Power dissipation: 2.5kW Technology: TRENCHSTOP™ Mechanical mounting: screw Collector current: 400A Gate-emitter voltage: ±20V Pulsed collector current: 800A Max. off-state voltage: 1.7kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FZ600R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Power dissipation: 2.8kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FZ900R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MMES Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Power dissipation: 4.3kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IAUA170N10S5N031AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W Case: PG-HSOF-5 Mounting: SMD On-state resistance: 4mΩ Kind of package: reel; tape Technology: OptiMOS™ 5 Polarisation: unipolar Gate charge: 88nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 519A Drain-source voltage: 100V Drain current: 22A Type of transistor: N-MOSFET Power dissipation: 197W Anzahl je Verpackung: 2000 Stücke |
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| IAUA180N04S5N012AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 720A Power dissipation: 125W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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| IAUA180N08S5N026AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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| IAUA180N10S5N029AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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| IAUA200N04S5N010AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Pulsed drain current: 800A Power dissipation: 167W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 132nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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| IAUA210N10S5N024AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Pulsed drain current: 674A Power dissipation: 238W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 119nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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| IAUA220N08S5N021AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5 Mounting: SMD Drain-source voltage: 80V Drain current: 27A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 211W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 677A Case: PG-HSOF-5 Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUA250N04S6N005AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUA250N04S6N006AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 57A Pulsed drain current: 1.5kA Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 169nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUA250N04S6N007AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1350A Power dissipation: 250W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 151nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUA250N04S6N007EAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 1.3kA Power dissipation: 192W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 0.83Ω Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUA250N04S6N008AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 51A Pulsed drain current: 1100A Power dissipation: 172W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 960µΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUA250N08S5N018AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 2.5mΩ Drain current: 35A Drain-source voltage: 80V Case: PG-HSOF-5 Gate charge: 125nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 813A Power dissipation: 238W Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N04S6L014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Technology: OptiMOS™ 6 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Power dissipation: 100W Drain current: 100A On-state resistance: 2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 400A Drain-source voltage: 40V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N04S6L020ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Technology: OptiMOS™ 6 Mounting: SMD Case: PG-TDSON-8 Kind of package: reel; tape Power dissipation: 75W Drain current: 100A On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 46nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 400A Drain-source voltage: 40V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N04S6L025ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N04S6N022ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 400A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N04S6N028ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N08S5N031ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N08S5N034ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 22A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Gate charge: 66nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N08S5N043ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 76A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||
| IAUC100N10S5L040ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 168W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
| FF450R06ME3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FF450R12KE4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FF450R12KT4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FF450R33T3E3B5BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-XHP100-6
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XHP™3
Topology: IGBT half-bridge
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-XHP100-6
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XHP™3
Topology: IGBT half-bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FF45MR12W1M1B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 108.01 EUR |
| 10+ | 103.86 EUR |
| FF500R17KE4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 500A
Pulsed collector current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 500A
Pulsed collector current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FF900R12IE4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 5.1kW
Electrical mounting: screw
Type of module: IGBT
Case: AG-PRIME2-1
Technology: PrimePACK™ 2
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 5.1kW
Electrical mounting: screw
Type of module: IGBT
Case: AG-PRIME2-1
Technology: PrimePACK™ 2
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FF900R12ME7B11BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Type of module: IGBT
Case: AG-ECONOD-5
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 6 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Type of module: IGBT
Case: AG-ECONOD-5
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 6 Stücke
Produkt ist nicht verfügbar
| FP06R12W1T4B3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-1
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| FP100R12KT4B11BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: AG-ECONO3-3
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 515W
Technology: EconoPIM™ 3
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: AG-ECONO3-3
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 515W
Technology: EconoPIM™ 3
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP10R12W1T7B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP15R12W1T4_B3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 130W
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 130W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP20R06W1E3B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Technology: EasyPIM™ 1B
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Technology: EasyPIM™ 1B
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP25R12W1T7B11BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP30R06KE3BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Case: AG-ECONO2C
Application: frequency changer; Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Case: AG-ECONO2C
Application: frequency changer; Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP40R12KE3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 200W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 200W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP40R12KT3BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP50R06W2E3B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP50R12KT3BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO3-3
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 280W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO3-3
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 280W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FP75R12KT4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Technology: EconoPIM™ 3
Case: AG-ECONO3-3
Application: frequency changer; Inverter
Power dissipation: 385W
Collector current: 75A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Pulsed collector current: 150A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Technology: EconoPIM™ 3
Case: AG-ECONO3-3
Application: frequency changer; Inverter
Power dissipation: 385W
Collector current: 75A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Pulsed collector current: 150A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 278.85 EUR |
| FS100R12W2T7B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FS10R12VT3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Anzahl je Verpackung: 40 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Anzahl je Verpackung: 40 Stücke
Produkt ist nicht verfügbar
| FS150R12KT4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO3-4
Power dissipation: 750W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO3-4
Power dissipation: 750W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FS150R17PE4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FS15R12VT3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 86W
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 86W
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FS200R12KT4RB11BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 1kW
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 1kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FS20R06VE3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A
Technology: EasyPACK™
Collector current: 20A
Power dissipation: 71.5W
Case: AG-EASY750-1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT half-bridge x3
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A
Technology: EasyPACK™
Collector current: 20A
Power dissipation: 71.5W
Case: AG-EASY750-1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT half-bridge x3
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FS50R12KE3BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 50A; 270W
Application: Inverter
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Case: AG-ECONO2B
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 50A; 270W
Application: Inverter
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 2
Case: AG-ECONO2B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FS75R12W2T4B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-EASY2B-2
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-EASY2B-2
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FS75R17KE3BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| FS820R08A6P2LBBPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W
Max. off-state voltage: 750V
Case: AG-HYBRIDD-1
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Application: Inverter
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.64kA
Power dissipation: 714W
Electrical mounting: Press-in PCB
Technology: HybridPACK™
Topology: IGBT half-bridge x3; NTC thermistor
Type of module: IGBT
Anzahl je Verpackung: 6 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W
Max. off-state voltage: 750V
Case: AG-HYBRIDD-1
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Application: Inverter
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.64kA
Power dissipation: 714W
Electrical mounting: Press-in PCB
Technology: HybridPACK™
Topology: IGBT half-bridge x3; NTC thermistor
Type of module: IGBT
Anzahl je Verpackung: 6 Stücke
Produkt ist nicht verfügbar
| FZ1000R33HE3BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Case: AG-IHVB130-3
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 2 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Case: AG-IHVB130-3
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 2 Stücke
Produkt ist nicht verfügbar
| FZ1400R33HE4BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
FZ1400R33HE4BPSA1 IGBT modules
FZ1400R33HE4BPSA1 IGBT modules
Produkt ist nicht verfügbar
| FZ2000R33HE4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Max. off-state voltage: 3.3kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 2kA
Pulsed collector current: 4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT x3
Case: AG-IHVB190-3
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Max. off-state voltage: 3.3kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 2kA
Pulsed collector current: 4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT x3
Case: AG-IHVB190-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FZ400R12KS4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FZ400R17KE4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Case: AG-62MMES
Electrical mounting: screw
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Collector current: 400A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Case: AG-62MMES
Electrical mounting: screw
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Collector current: 400A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 1.7kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FZ600R12KE3HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FZ900R12KE4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| IAUA170N10S5N031AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
On-state resistance: 4mΩ
Kind of package: reel; tape
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 519A
Drain-source voltage: 100V
Drain current: 22A
Type of transistor: N-MOSFET
Power dissipation: 197W
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
On-state resistance: 4mΩ
Kind of package: reel; tape
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 519A
Drain-source voltage: 100V
Drain current: 22A
Type of transistor: N-MOSFET
Power dissipation: 197W
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA180N04S5N012AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA180N08S5N026AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA180N10S5N029AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA200N04S5N010AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| IAUA210N10S5N024AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA220N08S5N021AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5
Mounting: SMD
Drain-source voltage: 80V
Drain current: 27A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 211W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 677A
Case: PG-HSOF-5
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5
Mounting: SMD
Drain-source voltage: 80V
Drain current: 27A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 211W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 677A
Case: PG-HSOF-5
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA250N04S6N005AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA250N04S6N006AUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 57A
Pulsed drain current: 1.5kA
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA250N04S6N007AUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1350A
Power dissipation: 250W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA250N04S6N007EAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1.3kA
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 1.3kA
Power dissipation: 192W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA250N04S6N008AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 1100A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 1100A
Power dissipation: 172W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 960µΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUA250N08S5N018AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 2.5mΩ
Drain current: 35A
Drain-source voltage: 80V
Case: PG-HSOF-5
Gate charge: 125nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 813A
Power dissipation: 238W
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 2.5mΩ
Drain current: 35A
Drain-source voltage: 80V
Case: PG-HSOF-5
Gate charge: 125nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 813A
Power dissipation: 238W
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| IAUC100N04S6L014ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Technology: OptiMOS™ 6
Mounting: SMD
Case: PG-TDSON-8
Kind of package: reel; tape
Power dissipation: 100W
Drain current: 100A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 400A
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Technology: OptiMOS™ 6
Mounting: SMD
Case: PG-TDSON-8
Kind of package: reel; tape
Power dissipation: 100W
Drain current: 100A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 400A
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| IAUC100N04S6L020ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Technology: OptiMOS™ 6
Mounting: SMD
Case: PG-TDSON-8
Kind of package: reel; tape
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 400A
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Technology: OptiMOS™ 6
Mounting: SMD
Case: PG-TDSON-8
Kind of package: reel; tape
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 46nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 400A
Drain-source voltage: 40V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| IAUC100N04S6L025ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| IAUC100N04S6N022ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| IAUC100N04S6N028ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| IAUC100N08S5N031ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| IAUC100N08S5N034ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| IAUC100N08S5N043ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| IAUC100N10S5L040ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar