FP06R12W1T4B3BOMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1200V 0 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 62.62 EUR |
| 24+ | 55.8 EUR |
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Technische Details FP06R12W1T4B3BOMA1 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 6A, Pulsed collector current: 12A, Power dissipation: 94W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: EasyPIM™ 1B, Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Case: AG-EASY1B-1, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FP06R12W1T4B3BOMA1 nach Preis ab 71.5 EUR bis 71.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FP06R12W1T4B3BOMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 12A Power dissipation: 94W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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FP06R12W1T4B3BOMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 12A Power dissipation: 94W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-1 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FP06R12W1T4B3BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 12A 94W 20-Pin EASY1B-1 Tray |
Produkt ist nicht verfügbar |
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FP06R12W1T4B3BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 12A 94000mW 20-Pin EASY1B-1 Tray |
Produkt ist nicht verfügbar |