Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (139451) > Seite 1203 nach 2325
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BFR193FH6327 | INFINEON TECHNOLOGIES |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: TSFP-3 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1433 Stücke: Lieferzeit 7-14 Tag (e) |
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BFR193L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: TSLP-3-1 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 750 Stücke: Lieferzeit 7-14 Tag (e) |
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BFR193WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1977 Stücke: Lieferzeit 7-14 Tag (e) |
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BFR35APE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 45mA Power dissipation: 0.28W Case: SOT23 Current gain: 70...140 Mounting: SMD Kind of package: reel; tape Frequency: 5GHz Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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BFR360FH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 6V Collector current: 35mA Power dissipation: 0.21W Case: TSFP-3 Current gain: 90...160 Mounting: SMD Kind of package: reel; tape Frequency: 14GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3005 Stücke: Lieferzeit 7-14 Tag (e) |
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BFR380FH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 80mA Power dissipation: 0.38W Case: TSFP-3 Mounting: SMD Kind of package: reel; tape Frequency: 14GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5635 Stücke: Lieferzeit 7-14 Tag (e) |
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BFR380L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 80mA Power dissipation: 0.38W Case: TSLP-3-1 Mounting: SMD Kind of package: reel; tape Frequency: 14GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12501 Stücke: Lieferzeit 7-14 Tag (e) |
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| BFR740L3RHE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4V Collector current: 40mA Power dissipation: 0.16W Case: TSLP-3-9 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz Anzahl je Verpackung: 15000 Stücke |
Produkt ist nicht verfügbar |
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BFR92PE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 45mA Power dissipation: 0.28W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 5GHz Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2860 Stücke: Lieferzeit 7-14 Tag (e) |
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BFR93AE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 90mA Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26355 Stücke: Lieferzeit 7-14 Tag (e) |
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BFR93AWH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 90mA Power dissipation: 0.3W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz Anzahl je Verpackung: 5 Stücke |
auf Bestellung 12050 Stücke: Lieferzeit 7-14 Tag (e) |
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BFS17PE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 25mA Power dissipation: 0.28W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 2.5GHz Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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BFS17WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT323 Kind of package: reel; tape Collector-emitter voltage: 15V Current gain: 20...150 Collector current: 25mA Type of transistor: NPN Power dissipation: 0.28W Polarisation: bipolar Frequency: 2.5GHz Case: SOT323 Kind of transistor: RF Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BFS481H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 20mA Power dissipation: 0.175W Case: SOT363 Current gain: 70...140 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BFS483H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363 Mounting: SMD Case: SOT363 Kind of package: reel; tape Frequency: 8GHz Power dissipation: 0.45W Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 65mA Type of transistor: NPN x2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2741 Stücke: Lieferzeit 7-14 Tag (e) |
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| BGA524N6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD operational amplifiers Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape Type of integrated circuit: RF amplifier Bandwidth: 1550...1615MHz Mounting: SMT Number of channels: 1 Case: TSNP6 Operating temperature: -40...85°C Integrated circuit features: low noise Kind of package: reel; tape Application: global navigation satellite systems (GPS) Noise Figure: 0.55dB Operating voltage: 1.5...3.3V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BGS12P2L6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz Type of integrated circuit: RF switch Output configuration: SPDT Case: TSLP-6-4 Supply voltage: 1.65...3.4V DC Mounting: SMD Bandwidth: 0.05...6GHz Application: telecommunication Anzahl je Verpackung: 15000 Stücke |
Produkt ist nicht verfügbar |
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| BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Type of integrated circuit: RF switch Number of channels: 2 Mounting: SMD Case: TSNP6 Supply voltage: 1.8...3.5V DC Application: telecommunication Bandwidth: 0.1...6GHz Output configuration: SPDT Anzahl je Verpackung: 15000 Stücke |
Produkt ist nicht verfügbar |
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BGS13S4N9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz Type of integrated circuit: RF switch Number of channels: 3 Mounting: SMD Case: TSNP9 Supply voltage: 1.8...3.3V DC Application: telecommunication Bandwidth: 0.1...3GHz Output configuration: SP3T Anzahl je Verpackung: 15000 Stücke |
Produkt ist nicht verfügbar |
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| BGS14MPA9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz Type of integrated circuit: RF switch Number of channels: 4 Mounting: SMD Case: ATSLP-9-3 Supply voltage: 1.65...1.95V DC Application: telecommunication Interface: MIPI Bandwidth: 0.05...6GHz Output configuration: SP4T Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BGSA14GN10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz Type of integrated circuit: RF switch Number of channels: 4 Mounting: SMD Case: TSNP10 Supply voltage: 1.8...3.6V DC Application: telecommunication Bandwidth: 0.1...5GHz Output configuration: SP4T Anzahl je Verpackung: 7500 Stücke |
Produkt ist nicht verfügbar |
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BGSX22G2A10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz Type of integrated circuit: RF switch Number of channels: 2 Mounting: SMD Case: ATSLP-10-2 Supply voltage: 1.65...3.4V DC Application: telecommunication Bandwidth: 0.1...6GHz Output configuration: DPDT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
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| BGSX22G5A10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz Type of integrated circuit: RF switch Number of channels: 2 Mounting: SMD Case: ATSLP-10-5 Supply voltage: 1.65...3.4V DC Application: telecommunication Bandwidth: 0.1...6GHz Output configuration: DPDT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BGSX24MU16E6327XUSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz Type of integrated circuit: RF switch Mounting: SMD Case: ULGA16-1 Supply voltage: 1.65...3.4V DC Application: telecommunication Interface: MIPI Bandwidth: 0.1...5GHz Output configuration: DP4T Anzahl je Verpackung: 4500 Stücke |
Produkt ist nicht verfügbar |
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BGT24LTR11N16E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape Type of integrated circuit: interface Kind of integrated circuit: MMIC; RF transceiver Supply voltage: 3.2...3.4V DC Case: TSNP16 Mounting: SMD DC supply current: 45mA Frequency: 24...24.25GHz Operating temperature: -40...85°C Open-loop gain: 26dB Kind of package: reel; tape Number of receivers: 1 Number of transmitters: 1 Noise Figure: 10dB Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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BGT24MTR11E6327XUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C Type of integrated circuit: interface Kind of integrated circuit: MMIC; RF transceiver Interface: SPI Supply voltage: 3.135...3.465V DC Case: VQFN32 Mounting: SMD DC supply current: 150mA Frequency: 24...26GHz Operating temperature: -40...105°C Open-loop gain: 26dB Kind of package: reel; tape Number of receivers: 1 Number of transmitters: 1 Noise Figure: 12dB Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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BGT24MTR12E6327XUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C Type of integrated circuit: interface Case: VQFN32 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Number of receivers: 2 Number of transmitters: 1 Kind of integrated circuit: MMIC; RF transceiver Noise Figure: 12dB DC supply current: 210mA Supply voltage: 3.135...3.465V DC Frequency: 24...24.25GHz Interface: SPI Open-loop gain: 26dB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 476 Stücke: Lieferzeit 7-14 Tag (e) |
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BGX50AE6327 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape Mounting: SMD Case: SOT143 Kind of package: reel; tape Power dissipation: 0.21W Type of diode: switching Features of semiconductor devices: fast switching Max. off-state voltage: 50V Load current: 0.14A Semiconductor structure: bridge rectifier Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1220 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSB008NE2LXXUMA1 | INFINEON TECHNOLOGIES |
BSB008NE2LXXUMA1 SMD N channel transistors |
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BSB012NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W Case: CanPAK™ M; MG-WDSON-2 Technology: OptiMOS™ Mounting: SMD Drain-source voltage: 25V Drain current: 170A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Mounting: SMD Polarisation: unipolar Drain-source voltage: 25V Drain current: 103A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 57W Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ MX; MG-WDSON-2 Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSB014N04LX3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSB015N04NX3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSB028N06NN3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: CanPAK™ M; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| BSB044N08NN3GXUMA1 | INFINEON TECHNOLOGIES |
BSB044N08NN3GXUMA1 SMD N channel transistors |
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BSB056N10NN3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Power dissipation: 78W Case: CanPAK™ MN; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSB104N08NP3GXUSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W Mounting: SMD Case: CanPAK™ M; MG-WDSON-2 On-state resistance: 10.4mΩ Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 32A Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 45A Power dissipation: 78W Case: CanPAK™ MZ; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSB280N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 30A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Technology: OptiMOS™ Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC007N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 138W Case: PG-TDSON-8 FL On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| BSC009NE2LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC009NE2LS5IATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC009NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC010N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: PG-TDSON-8 FL On-state resistance: 1mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC010N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC010N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC010NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 39A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC010NE2LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 38A Power dissipation: 96W Case: PG-TDSON-8 On-state resistance: 1.05mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC011N03LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC011N03LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC014N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC014N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC014N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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 |
BSC014N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSC014NE2LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC016N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSC016N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC016N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC017N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC018N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| BFR193FH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1433 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 379+ | 0.19 EUR |
| 447+ | 0.16 EUR |
| 562+ | 0.13 EUR |
| 603+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| BFR193L3E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 750 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 109+ | 0.66 EUR |
| 171+ | 0.42 EUR |
| 196+ | 0.37 EUR |
| 286+ | 0.25 EUR |
| 304+ | 0.24 EUR |
| 500+ | 0.23 EUR |
| BFR193WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1977 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 175+ | 0.41 EUR |
| 302+ | 0.24 EUR |
| 358+ | 0.2 EUR |
| 506+ | 0.14 EUR |
| 538+ | 0.13 EUR |
| BFR35APE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
Anzahl je Verpackung: 3000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| BFR360FH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 6V
Collector current: 35mA
Power dissipation: 0.21W
Case: TSFP-3
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 6V
Collector current: 35mA
Power dissipation: 0.21W
Case: TSFP-3
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3005 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 232+ | 0.31 EUR |
| 336+ | 0.21 EUR |
| 391+ | 0.18 EUR |
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| BFR380FH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5635 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 207+ | 0.35 EUR |
| 338+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 443+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| BFR380L3E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12501 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 379+ | 0.19 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 2500+ | 0.097 EUR |
| BFR740L3RHE6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Anzahl je Verpackung: 15000 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Anzahl je Verpackung: 15000 Stücke
Produkt ist nicht verfügbar
| BFR92PE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2860 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 320+ | 0.23 EUR |
| 605+ | 0.12 EUR |
| 685+ | 0.1 EUR |
| 760+ | 0.094 EUR |
| 3000+ | 0.087 EUR |
| BFR93AE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26355 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 0.53 EUR |
| 176+ | 0.41 EUR |
| 234+ | 0.31 EUR |
| 264+ | 0.27 EUR |
| 807+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| BFR93AWH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 12050 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 385+ | 0.19 EUR |
| 560+ | 0.13 EUR |
| 705+ | 0.1 EUR |
| 810+ | 0.089 EUR |
| 850+ | 0.084 EUR |
| 3000+ | 0.082 EUR |
| BFS17PE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 25mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2.5GHz
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 25mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2.5GHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BFS17WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 15V
Current gain: 20...150
Collector current: 25mA
Type of transistor: NPN
Power dissipation: 0.28W
Polarisation: bipolar
Frequency: 2.5GHz
Case: SOT323
Kind of transistor: RF
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 15V
Current gain: 20...150
Collector current: 25mA
Type of transistor: NPN
Power dissipation: 0.28W
Polarisation: bipolar
Frequency: 2.5GHz
Case: SOT323
Kind of transistor: RF
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BFS481H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BFS483H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Frequency: 8GHz
Power dissipation: 0.45W
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 65mA
Type of transistor: NPN x2
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Frequency: 8GHz
Power dissipation: 0.45W
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 65mA
Type of transistor: NPN x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2741 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 1.02 EUR |
| 113+ | 0.64 EUR |
| 129+ | 0.56 EUR |
| 136+ | 0.53 EUR |
| 144+ | 0.5 EUR |
| 500+ | 0.48 EUR |
| BGA524N6E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Mounting: SMT
Number of channels: 1
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Noise Figure: 0.55dB
Operating voltage: 1.5...3.3V
Anzahl je Verpackung: 1 Stücke
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Mounting: SMT
Number of channels: 1
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Noise Figure: 0.55dB
Operating voltage: 1.5...3.3V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BGS12P2L6E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Case: TSLP-6-4
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Anzahl je Verpackung: 15000 Stücke
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Case: TSLP-6-4
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Anzahl je Verpackung: 15000 Stücke
Produkt ist nicht verfügbar
| BGS12SN6E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Application: telecommunication
Bandwidth: 0.1...6GHz
Output configuration: SPDT
Anzahl je Verpackung: 15000 Stücke
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Application: telecommunication
Bandwidth: 0.1...6GHz
Output configuration: SPDT
Anzahl je Verpackung: 15000 Stücke
Produkt ist nicht verfügbar
| BGS13S4N9E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz
Type of integrated circuit: RF switch
Number of channels: 3
Mounting: SMD
Case: TSNP9
Supply voltage: 1.8...3.3V DC
Application: telecommunication
Bandwidth: 0.1...3GHz
Output configuration: SP3T
Anzahl je Verpackung: 15000 Stücke
Category: Analog multiplexers and switches
Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz
Type of integrated circuit: RF switch
Number of channels: 3
Mounting: SMD
Case: TSNP9
Supply voltage: 1.8...3.3V DC
Application: telecommunication
Bandwidth: 0.1...3GHz
Output configuration: SP3T
Anzahl je Verpackung: 15000 Stücke
Produkt ist nicht verfügbar
| BGS14MPA9E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Application: telecommunication
Interface: MIPI
Bandwidth: 0.05...6GHz
Output configuration: SP4T
Anzahl je Verpackung: 1 Stücke
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Application: telecommunication
Interface: MIPI
Bandwidth: 0.05...6GHz
Output configuration: SP4T
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BGSA14GN10E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Application: telecommunication
Bandwidth: 0.1...5GHz
Output configuration: SP4T
Anzahl je Verpackung: 7500 Stücke
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Application: telecommunication
Bandwidth: 0.1...5GHz
Output configuration: SP4T
Anzahl je Verpackung: 7500 Stücke
Produkt ist nicht verfügbar
| BGSX22G2A10E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: ATSLP-10-2
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Bandwidth: 0.1...6GHz
Output configuration: DPDT
Anzahl je Verpackung: 1 Stücke
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: ATSLP-10-2
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Bandwidth: 0.1...6GHz
Output configuration: DPDT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 67+ | 1.07 EUR |
| 100+ | 0.9 EUR |
| BGSX22G5A10E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: ATSLP-10-5
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Bandwidth: 0.1...6GHz
Output configuration: DPDT
Anzahl je Verpackung: 1 Stücke
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: ATSLP-10-5
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Bandwidth: 0.1...6GHz
Output configuration: DPDT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BGSX24MU16E6327XUSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Mounting: SMD
Case: ULGA16-1
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Interface: MIPI
Bandwidth: 0.1...5GHz
Output configuration: DP4T
Anzahl je Verpackung: 4500 Stücke
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Mounting: SMD
Case: ULGA16-1
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Interface: MIPI
Bandwidth: 0.1...5GHz
Output configuration: DP4T
Anzahl je Verpackung: 4500 Stücke
Produkt ist nicht verfügbar
| BGT24LTR11N16E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Supply voltage: 3.2...3.4V DC
Case: TSNP16
Mounting: SMD
DC supply current: 45mA
Frequency: 24...24.25GHz
Operating temperature: -40...85°C
Open-loop gain: 26dB
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Noise Figure: 10dB
Anzahl je Verpackung: 3000 Stücke
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Supply voltage: 3.2...3.4V DC
Case: TSNP16
Mounting: SMD
DC supply current: 45mA
Frequency: 24...24.25GHz
Operating temperature: -40...85°C
Open-loop gain: 26dB
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Noise Figure: 10dB
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| BGT24MTR11E6327XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Supply voltage: 3.135...3.465V DC
Case: VQFN32
Mounting: SMD
DC supply current: 150mA
Frequency: 24...26GHz
Operating temperature: -40...105°C
Open-loop gain: 26dB
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Noise Figure: 12dB
Anzahl je Verpackung: 1000 Stücke
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Supply voltage: 3.135...3.465V DC
Case: VQFN32
Mounting: SMD
DC supply current: 150mA
Frequency: 24...26GHz
Operating temperature: -40...105°C
Open-loop gain: 26dB
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Noise Figure: 12dB
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| BGT24MTR12E6327XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Case: VQFN32
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Number of receivers: 2
Number of transmitters: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
DC supply current: 210mA
Supply voltage: 3.135...3.465V DC
Frequency: 24...24.25GHz
Interface: SPI
Open-loop gain: 26dB
Anzahl je Verpackung: 1 Stücke
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Case: VQFN32
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Number of receivers: 2
Number of transmitters: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
DC supply current: 210mA
Supply voltage: 3.135...3.465V DC
Frequency: 24...24.25GHz
Interface: SPI
Open-loop gain: 26dB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 476 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 14 EUR |
| BGX50AE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Mounting: SMD
Case: SOT143
Kind of package: reel; tape
Power dissipation: 0.21W
Type of diode: switching
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Load current: 0.14A
Semiconductor structure: bridge rectifier
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Mounting: SMD
Case: SOT143
Kind of package: reel; tape
Power dissipation: 0.21W
Type of diode: switching
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Load current: 0.14A
Semiconductor structure: bridge rectifier
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1220 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 391+ | 0.18 EUR |
| 435+ | 0.16 EUR |
| 569+ | 0.13 EUR |
| 603+ | 0.12 EUR |
| BSB008NE2LXXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
BSB008NE2LXXUMA1 SMD N channel transistors
BSB008NE2LXXUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
| BSB012NE2LXIXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Technology: OptiMOS™
Mounting: SMD
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Technology: OptiMOS™
Mounting: SMD
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSB013NE2LXIXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSB014N04LX3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSB015N04NX3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSB028N06NN3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSB044N08NN3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
BSB044N08NN3GXUMA1 SMD N channel transistors
BSB044N08NN3GXUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
| BSB056N10NN3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 78W
Case: CanPAK™ MN; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 78W
Case: CanPAK™ MN; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSB104N08NP3GXUSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
On-state resistance: 10.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 32A
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
On-state resistance: 10.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 32A
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSB165N15NZ3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 45A
Power dissipation: 78W
Case: CanPAK™ MZ; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 45A
Power dissipation: 78W
Case: CanPAK™ MZ; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSB280N15NZ3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: OptiMOS™
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: OptiMOS™
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC007N04LS6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 138W
Case: PG-TDSON-8 FL
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 138W
Case: PG-TDSON-8 FL
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC009NE2LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC009NE2LS5IATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC009NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC010N04LS6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC010N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC010N04LSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC010NE2LSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC010NE2LSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC011N03LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC011N03LSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC014N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC014N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC014N04LSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC014N06NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSC014NE2LSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC016N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BSC016N03MSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC016N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC017N04NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| BSC018N04LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar